GT60J321 TOSHIBA

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications /Gb7/G20Enhancement-mode /Gb7/G20High speed: t f = 0.30 µs (typ.) (IC = 60 A) /Gb7/G20Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A) Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 600 V Gate-emitter voltage V GES /Gb125 V DC I C 60 Collector current 1 ms I CP 120 A DC I ECF 60 Emitter-collector forward current 1 ms I ECPF 120 A Collector power dissipation (Tc /G3d 25°C) PC 200 W Junction temperature T j 150 °C Storage temperature range T stg /G2d55~150 °C Screw torque /Gbe 0.8 N ･m Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Collector Gate Emitter

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE /G3d /Gb125 V, VCE /G3d 0 /Gbe /Gbe /Gb1500 nA Collector cut-off current I CES V CE /G3d 600 V, VGE /G3d 0 /Gbe /Gbe 1.0 mA Gate-emitter cut-off voltage V GE (OFF) I C /G3d 60 mA, VCE /G3d 5 V 3.0 /Gbe 6.0 V /G20 VCE (sat) (1) I C /G3d 10 A, VGE /G3d 15 V /Gbe 1.2 1.7 Collector-emitter saturation voltage VCE (sat) (2) I C /G3d 60 A, VGE /G3d 15 V /Gbe 1.55 1.9 V/G20 Input capacitance C ies V CE /G3d 10 V, VGE /G3d 0, f /G3d 1 MHz /Gbe 13500 /Gbe/G20pF Rise time t r /Gbe 0.25 /Gbe Turn-on time t on /Gbe/G200.35 /Gbe Fall time t f /Gbe/G200.30 0.50 Switching time Turn-off time t off /G20 /Gbe 0.80 /Gbe /G6ds Forward voltage V F I F /G3d 60 A, VGE /G3d 0/G20/Gbe /G20 1.5/G202.0 V Reverse recovery time t rr I F /G3d 60 A, VGE /G3d 0, di/dt /G3d /G2d100 A//G6ds/G20/Gbe /G200.1/G200.2 /G6ds Thermal resistance (IGBT) R th (j-c) /Gbe /Gbe/G20 /Gbe/G200.625 °C/W Thermal resistance (Diode) R th (j-c) /Gbe /Gbe /Gbe 0.96 °C/W /G2d15 V 15 V 300 V 5 /G57/G20 18 /G57

Collector current I C (A) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 100 VGE /G3d 8 V 10 15

20 Common emitter

Tc /G3d 25°C 0 4 8 12 16 20 Common emitter Tc /G3d /G2d40°C IC /G3d 10 A 120 0 4 8 12 16 20 Common emitter Tc /G3d 25°C IC /G3d 10 A 120 30 0 4 8 12 16 20 Common emitter Tc /G3d 125°C IC /G3d 10 A 120 100 0 4 8 12 16 20 Common emitter VCE /G3d 5 V Tc /G3d 125°C /G2d40 /G2d40 0 40 120 160 80 IC /G3d 10 A Common emitter VGE /G3d 15 V 120

Switching time ( /G6ds) Collector current I C (A) Gate charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE ( /Gb425 V) Gate-emitter voltage V GE (V) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Gate resisstance R G ( /G57) Switching time – RG Switching time ( /G6ds) Collector-emitter voltage V CE (V) Safe operating area Collector current I C (A) Switching time – IC 0 100 200 300 400 500 Common emitter RL /G3d 5 /G57 Tc /G3d 25°C 1 3 10 30 100 300 1000 3000 Common emitter VGE /G3d 0 f /G3d 1 MHz Tc /G3d 25°C Cies Coes Cres 100 300 500 1000 3000 50000 5000 10000 30000 0.05 3 10 30 50 100 300 0.1 0.3 0.5

3 Common emitter

Tc /G3d 25°C tf toff ton tr *: Single non-repetitive pulse Tc /G3d 25°C Curves must be derated linearly with increase in temperature. DC operation IC max (pulsed) IC max (continuous) 10 ms* 1 ms* 100 /G6ds* 10 /G6ds* 0.1 1 3 1000 10 30 100 0.3 0.5 100 300 300 RE 0.5 0.3 0.1 0.05 0 20 40 60 80 Common emitter VCC /G3d 300 V VGG /G3d /Gb115 V RG /G3d 18 /G57 Tc /G3d 25°C tf toff tr ton

Junction capacitance C j ( p F ) Collector-emitter voltage V CE (V) Reverse bias SOA Collector current I C (A) Pulse width t w (s) rth (t) – tw Transient thermal impedance rth (t) (°C/W) Reverse voltage V R (V) Cj – VR Reverse recovery time t rr (ns) di/dt (A/ /G6ds) Irr, trr – di/dt 200 Forward voltage V F (V) IF – VF Forward current I F (A) Reverse recovery time t rr ( n s ) Forward current I F (A) Irr, trr – IF Peak reverse recovery current Irr (A) RE 1 3 10 30 100 1000 100 300 300 Tj /G3c/G3d125°C VGE /G3d /Gb115 V RG /G3d 18 /G57 10/G2d3 10/G2d4 10/G2d3 10/G2d2 10/G2d1 10 0 10 1 10 2 10/G2d2 10/G2d1 102 100 101 Diode IGBT Tc /G3d 25°C 100 Common collector VGE /G3d 0 Tc /G3d 125°C /G2d40 0 10 20 30 40 60 50 Common collector di/dt /G3d /G2d100 A//G6ds VGE /G3d 0 Tc /G3d 25°C Irr trr 500 300 100 f = 1 MHz Tc /G3d 25°C 1000 300 100 1 3 10 50 100 500 500 5 30 300 Peak reverse recovery current I rr (A) 0 40 80 120 160 240 200 Common collector IF /G3d 60 A Tc /G3d 25°C Irr trr

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE 100