GT5J321 TOSHIBA

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TOSHIBATOSHIBATOSHIBATOSHIBA GT5J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT5J321 High Power Switching Applications Fast Switching Applications

  • The 4th generation
  • Enhancement-mode
  • Fast Switching(FS) :Operating frequency up to 150kHz(Reference)
  • High speed :tf=0.05μs(typ.)
  • Low switching loss :Eon=0.12mJ(typ.) :Eoff=0.10mJ(typ.)
  • Low saturation voltage :VCE(sat)=2.0V(typ.)
  • FRD included between emitter and collector Maximum Ratings (Ta=25℃)Maximum Ratings (Ta=25℃)Maximum Ratings (Ta=25℃)Maximum Ratings (Ta=25℃) Characteristic Symbol Ratings Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 5 1ms ICP 10 Emitter-collector DC IF 5 forward current 1ms IFM 10 Collector power dissipation (Tc=25℃) Junction temperature Tj 150 ℃ Storage temperature range Tstg -55～150 ℃ 2001-6- 1/6 Collector current PC 28 W A A PreliminaryPreliminaryPreliminaryPreliminary

TOSHIBATOSHIBATOSHIBATOSHIBA GT5J321 Electrical Characteristics(Ta=25℃)Electrical Characteristics(Ta=25℃)Electrical Characteristics(Ta=25℃)Electrical Characteristics(Ta=25℃) Test Condition IGES VGE=±20V,VCE=0 ±500 ICES VCE=600V,VGE=0 VGE(OFF) IC=0.5mA,VCE=5V VCE(sat) IC=5A,VGE=15V Cies VCE=10V,VGE=0,f=1MHz Turn-on delay time td(on) Rise Time tr Inductive Load Turn-on Time ton VCC=300V,IC=5A Turn-off delay time td(off) VGG=+15V,RG=100Ω Fall Time tf (Note 1) Turn-off Time toff (Note 2) Turn-on switching loss Eon Turn-off switching loss Eoff VF IF=5A,VGE=0 trr IF=5A,di/dt=-100A/μs Thermal resistance(IGBT) Rth(j-c) ― Thermal resistance(Diode) Rth(j-c) ― 2001-6- 2/6 -- 4.90 ℃/W -- 4.46 ℃/W V Reverse recovery time -- 200 ns Peak forward voltage -- 2.0 - 0.13 - mJ- 0.10 - - 0.03 - - 0.15 - 0.15 Switching time Switching loss 0.05 0.20 Input capacitance - Collector-emitter saturation volatage - 3.5 Min Typ. - mA V6.5 Max 1.0 0.12 Unit Gate leakage current Collector cut-off current Characteristic Symbol Gate-emitter cut-off voltage 2.0 nA 2.45 V 950 0.05 pF μs PreliminaryPreliminaryPreliminaryPreliminary

TOSHIBATOSHIBATOSHIBATOSHIBA GT5J321 2001-6- 3/6 IC - VGE 02468 1 0 1 2 1 4 Gate-emitter voltage V GE (V) Collector current IC (A) -40 Tc = 25℃ 125 Common emitter VCE CE CE CE = 5V VCE(sat) - Tc -60 -20 20 60 100 140 Case tenpera c (℃) Collector-emitter saturation voltage VCE(sat) (V) IC = 2A Common emitter VGEGEGEGE = 15V VCE - VGE 0 4 8 12 16 20 Gate-emitter voltage V GE (V) Collector-emitter voltage VCE (V) Common emitter Tc = -40℃ VCE - VGE 048 1 2 1 6 2 0 Gate-emitter voltage VGE (V) Collector-emitter voltage VCE (V) Common emitter Tc = 125℃ IC = 2A IC = 5A VCE - VGE 0 4 8 12 16 20 Gate-emitter voltage V GE (V) Collector-emitter voltage VCE (V) Common emitter Tc = 25℃ IC = 2A IC - VCE 012345 Collector-emitter voltage V CE (V) Collector current IC (A) Common emitte Tc = 25℃ VGE = 8V Reference Case temperature Tc (℃)

TOSHIBATOSHIBATOSHIBATOSHIBA GT5J321 2001-6- 4/6 Switching time toff, tf, td(off) - RG 0.001 0.01 0.1 1 10 100 1000 Gate resistance RG (Ω) Switching time toff, tf td(off) (μs) tf td(off) toff Switching loss Eon, Eoff - RG 0.01 0.1 1 10 100 1000 Gate resistance RG (Ω) Switching loss Eon, Eoff (mJ) Eon Eoff Switching time on, tr, td(on) - IC 0.001 0.01 0.1 012345 Collector current IC (A) Switching time ton, tr, td(on) (μs) ton td(on) tr Switc hi off, tf, td(off) - IC 0.001 0.01 0.1 012345 Collector current IC (A) Switching time toff, tf, td(off) (μs) tf td(off) toff Common emitter VCCCCCCCC=300V VGGGGGGGG=15V RGGGG=100Ω ：Tc=25℃ ：Tc=125℃ （Note1） Switching loss Eon, Eoff - IC 0.01 0.1 012345 Collector current IC (A) Switching loss Eon, Eoff (mJ) Eon Eoff Switching time on, tr, td(on) - RG 0.001 0.01 0.1 1 10 100 1000 Gate resistance RG (Ω) Switching time ton, tr, td(on) (μs) ton td(on) tr Common emitter VCCCCCCCC =300V VGGGGGGGG =15V ICCCC=5A ：Tc=25℃ ：Tc=125℃ （Note1） Common emitter VCCCCCCCC=300V VGGGGGGGG=15V ICCCC=5A ：Tc=25℃ ：Tc=125℃ （Note1） Common emitter VCCCCCCCC =300V VGGGGGGGG =15V RGGGG=100Ω ：Tc=25℃ ：Tc=125℃ （Note2） Reference Common emitter VCCCCCCCC=300V VGGGGGGGG=15V RGGGG=100Ω ：Tc=25℃ ：Tc=125℃ （Note１） Common emitter VCCCCCCCC=300V VGGGGGGGG=15V ICCCC=5A ：Tc=25℃ ：Tc=125℃ （Note2） Switching time ton,tr,td(on) - RG Switching time ton,tr,td(on) - IC Switching time toff,tf,td(off) - RG Switching time toff,tf,td(off) - IC

TOSHIBATOSHIBATOSHIBATOSHIBA GT5J321 2001-6- 5/6 VCE, VGE - QG 100 200 300 400 500 0 1 02 03 04 0 Gate charge Q G (nC) Collector emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE=300V 100 200 trr, Irr - IF 100 02468 1 0 Forward current IF (A) Reverse recovery current Irr (A) 100 1000 Reverse recovery time trr (ns) Irr trr C-VCE 100 1000 0.1 1 10 100 1000 Collector-emitter voltage VCE (V) Capacitance C (pF) IF-VF 0 0.4 0.8 1.2 1.6 2 Forward voltage V F (V) Forward current IF (A) -40℃ Tc=25℃ 125℃ Common collector VGEGEGEGE=0 Common collector di/dt=-100A/μs VGEGEGEGE=0 ：Tc=25℃ ：Tc=125℃ Cies Coes Cres Common emitter VGEGEGEGE=0 f=1MHz Tc=25℃ Reference Safe operati 0.1 100 1 10 100 1000 Collector-emitter voltage VCE (V) Collector current IC (A) 10ms10ms10ms10ms ** 1ms1ms1ms1ms 100 μs100 μs100 μs100 μs 50 μs50 μs50 μs50 μs** Common emitter RLLLL=60Ω Tc=25℃ Reverse bias SOA 0.1 100 1 10 100 1000 Collector-emitter voltage VCE (V) Collector current IC (A) Tj≦125℃ VGEGEGEGE=15V RGGGG=13Ω Safe operating area *：Single nonrepetitive pulse Tc=25 ℃ Curves must be dilated linearly with increase in temperature. DC operation Ic max (continuous) Ic max (pulsed)* Tj≦125℃ VGEGEGEGE=15V RGGGG=100Ω

TOSHIBATOSHIBATOSHIBATOSHIBA GT5J321 2001-6- 6/6 102 100 10-3 10-4 10-1 10-2 10-5 10-4 10-3 10-1 100 101 10210-2 Pulse w (s) Transient thermal resistance rth(t) (℃/W) rth(t) - tw TC = 25℃ Reference 101 FRD IGBT Pulse width tW (s)