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TOSHIBA GT5J311,GT5J311(SM) TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J311, GT5J311(SM) HIGH POWER SWITCHING APPLICATIONS Unit in mm GT5J311 MOTOR CONTROL APPLICATIONS voamex © The 3rd Generation 3 || | al8 FA | |e e fo) ae re Enhancement-Mode a @ High Speed : tp=0.30us (Max.) (I¢=5A) OMAK | 5 e@ Low Saturation Voltage : VCE (sat)=2.7V (Max.) (I¢=5A) ozs s e FRD included between Emitter and Collector. 25420.25 2.54 £0.25 gq +o “ MAXIMUM RATINGS (Ta = 25°C) er a |e CHARACTERISTIC SYMBOL UNIT 1. GATE 2. COLLECTOR (HEAT SINK) Collector-Emitter Voltage Vows | 600 | V |} % EMITTER Gate-Emitter Voltage VGES JEDEC = BIA = Collector Current c TOSHIBA 2-10S1C Emivier Collector Forward | DC | Ip | 8 | A] Weignrsaie Current Collector Power Dissipation GT5J311(SM) Py 4 (Te=25°C) c 8 w - 10.31ax. Junction Temperature a oe | ee Storage Temperature Range —55~150 SS L | f EQUIVALENT CIRCUIT 4 tins 43 5 Collector il 076 3 254 2.54 af |= bh-t- ffs] DS Emitter 1. GATE 2. COLLECTOR (HEAT SINK) 3. EMITTER JEDEC - TOSHIBA 2-10S2C Weight : 1.4g 26100 1EAA2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fall due to thei inherent electrical sensitivity and. vulnerability to physical stress. it's the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook © ‘he information contained herein is presented only as a guide for the applications of our products. No_ responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1998-11-17 1/6
TOSHIBA GT5J311,GT5J311(SM) ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current | _Tgns |Van==20V, Von=0 [= [soo aa] Collector Cut-Off Current | Icgs |Vce=600V, Vap=0 [== 10) ma Gate-Emitter Cut-Off estmenvorss fon [vl Collector-Emitter Saturation = fee emer | — fal ol Von=20V, Vep=0, fim [— | 60, — | oF | Inductive Load [ = | o12 | — | Switching Voc=300V, I¢=5A | — | 040] — | Time Vao=+15V, Rg=1800 = [= [ois [oa] “* (ote [= [050 | — | Peak Forward Voltage | Vp [p=8A,Von=0 —~sdY| — | — | 1a) v1 HReverse Recovery Time | tyr [I R=8A, di/dt=—100A7z8 | — | — | 200] ns Thermal Resistance (Diode) | Rung [=| = | — | 376[°c7w] (Note 1) Switching time measurement circuit and input/output waveforms VGE =A 90% i pe H h -VGE ! H I i i, Rg ptt. 9 VOE_ 10% Lf' X10% 10% +f ' 410% te feel VCE td (of) | | iF ta(on)} fm | | toft | "ton | Switching loss measurement waveforms Vv { \\ H 4 H 1 i 1 Ka Vv H q i i Lt ' Eogf * "Eon ' 1998-11-17 2/6
TOSHIBA GT5J311,GT5J311(SM) "oe CME 8 ee DI ee AS: Jee I » PereHPP eS § Pee eee A f FE ey ee ee | oe eee i | oes Cane BE fe cr a 2, poe paw es PEP) COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE Vgg (V) S20, VcE - VGE sm» VcE - VGE 5 5 = LOTT a LoL
2 COMMON 2 COMMON
Bf eure (TT B few [TT TT | g “pee CTI g “Lense [ITT | ae 3 3 2 2 PCeEeeeees) BF PERSE i & BFA e FO , EOS BOO CIRS SSeS Ee a ee GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) Ic - VGE VCE (sat) — Te 10; 4 2 | Yoessv dt | | | | z Vor=15¥ Beene pe EOE 3p RS
2 CCE ee | EE/ ttt |
sf s Loot | 72 eee eee 3 ft ft fete Tt tT ge TLEEELELLLL, g ae eee 2 A // Litt ttt yy | 0 4 8 12 16 20 -60 -20 20 60 100 140 GATE-EMITTER VOLTAGE VgE (V) CASE TEMPERATURE Te (°C) a T-.): 2 EO be
TOSHIBA GT5J311,GT5J311(SM) SWITCHING TIME ton, tr — RG SWITCHING TIME ton, tr — I SToommon earner [TTI | TTT == = SS greeter LITT TTT gf Beant Ltt 08 ee ~ Sess SSS ae 2 of eee ete a
03 ZF |
OD i | “ESE =o Eee meer ee eases! eects E mp | COMMON EMITTER SA) a | 5 | |w\\( 7 | |) Voo=300V ee aa a z a | z Rg=1800 eo UII CT TET wot _L | | || == 1 3 10 30 100 300 1000 0 2 4 6 8 10 GATE RESISTANCE Rg (0) COLLECTOR CURRENT Ic (A) SWITCHING TIME. toff, tt — RG SWITCHING TIME tof, tr — Ic rs ee ee a LU a Sof 7 pets b===b==-F == S GALE tt A ee = 03 [Lose FSP eae = = =9 Sg ghey : 5 § Foe ieee 8 se os} te EER or [Hs . So Kyl Bt UM ei 7lil| SSS go US tee] iN [EF FF Bag HF EH counos exrren S000} ron mara | 0.05, — FH FH veo=s00v * cosh) Veet soov Fo EHHM TH veg tie n 0.08 Mocmeat eed SA a Te=25°C XK Te=25°C LT TIMI TT) = ssective Lt ff | | == ses. 0.01 1 3 10 30 100 = 300-=—-1000 9019 2 4 6 8 10 GATE RESISTANCE Rg (Q) COLLECTOR CURRENT Ic (A)
3 SWITCHING LOSS Eon, Eoff — RG 1 SWITCHING LOSS Eon, Eoff — IC
common emrrrer |_| [[]{IT TT TUTTI] COMMON EMITTER [-—}—}—f-——] Bremen = LLIN TTT 2) eee ~ age #15) = Gee ee 1] 789 tt e F [Shee ES e | Ses. Fo g 05[—— : Te= 125°C Been % TT 1 Te 125" | & yg} te a 247 [A g a 4 - 44 SL beetle lll SSS a 0 ee a a a a
2 See g Fe EA a
S 9.08 Fy [ {| WAL ee Soak LEE eer a es a & a | z rT SELL z ool UTM TIE TTT oa ot 1 3 10 30 100 300 1000 0 1 2 3 4 5 GATE RESISTANCE Rg (9) COLLECTOR CURRENT Ic (A) 1998-11-17 4/6
TOSHIBA GT5J311,GT5J311(SM) 1000) acs = 500 Yon Vor — 06 7, 20 SEES common common esnrner || | LY | ¢ PR) warren 8 a ILI Wrl = cl = 00) Temas Yr 8 - “TENN el yore, 8 LT Yi it | = Bt LUI TTIIT tenae| 5 at ob off 3 EEE Ea EH 4 5 Z of S ccee dE E200 “aucun 8 og eg 2 TTA rT? &€ Sot 5 ot POAT TTT TT | _—— g
7 PoP Pee 8 ol PSNI 0
1 3 10 30 100-300-1000 ° 4 8 12 16 20 24 COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE CHARGE Qq (nC) 10) ie = Vr 50) ter, ir — aa 500 <~ TJ J JT 7] ~ g FEET TY TT | g op fp = | ___} to E ee AR: Ce SSSE EEE! 5 2 ‘Coooyoyeoeo) Og EEE Pe q Fs | COCO ERE g ‘Fee Cee | (ey a, coer |, 0 04 08 12 16 2.0 0 1 2 3 4 5 FORWARD VOLTAGE Vp (V) FORWARD CURRENT Ip (A) SAFE OPERATING AREA REVERSE BIAS SOA “a “Sa 2 oi oh rooys% | [TT III 2 i a © qeaaxeuiseox! | [Il /1 | [III eo LUM I TI Ee = ETHER A Ht 5 1) NONREPETITIVE, AWA g TE =H © oa) ivan won FEN EH a ei ot INCREASE IN \\ Vor=+15V rewrerarors | | NU AIT Illh weve || LIT TTI O01 i 0.1, 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 COLLECTOR-EMITTER VOLTAGE VcE (V) COLLECTOR-EMITTER VOLTAGE Vcgp (V) TTT S«*OB-T I-17
TOSHIBA GT5J311,GT5J311(SM) wo! rth) = tw Pa ori ene ren Zs pro smo ema Es Aa 5 9-9 TT TC a SS Se ed 2 ee 2 on Bs A A 1o* 10% 10% 10% 107% 10° 10" 10° PULSE WIDTH ty (s) 1998-11-17 6/6