GT50J328 TOSHIBA

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Fourth Generation IGBT

  • Enhancement mode type
  • H i g h s p e e d : tf = 0.1 μs (Typ.)
  • Low saturation voltage : V CE (sat) = 2.0 V (Typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±25 V DC I C 50 Continuous collector current 1ms I CP 120 A DC I F 30 Diode forward current 1ms I FP 120 A Collector power dissipation (Tc = 25°C) PC 140 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heav y loads (e.g. the application of high temperature/current/voltage a nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking Note 1: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Gate Emitter Collector Lot No. Note 1 Part No. (or abbreviation code)50J328 TOSHIBA

Electrical Characteristics (Ta=25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES V GE = ±25 V, VCE = 0 ― ― ± 100 nA Collector cut-off current ICES V CE = 600 V, VGE = 0 ― ― 1.0 mA Gate-emitter cut-off voltage VGE (OFF) I C = 50 mA, VCE = 5 V 3.0 ― 6.0 V Collector-emitter saturation voltage V CE (sat) I C = 50 A, VGE = 15 V ― 2.0 2.8 V Input capacitance Cies V CE = 10 V, VGE = 0, f = 1 MHz ― 4800 ― pF Rise time tr ― 0.2 ― Turn-on time ton ― 0.3 ― Fall time tf ― 0.1 0.17 Switching time Turn-off time toff Note 2 ― 0.4 ― μs Diode forward voltage VF I F = 30 A, VGE = 0 ― ⎯ 2.0 V Reverse recovery time trr I F = 30A, VGE = 0, di/dt = − 100 A/μs ⎯ ⎯ 0.2 µs Thermal Resistance (IGBT) Rth (j-c) ⎯ ⎯ ⎯ 0.89 °C/W Thermal Resistance (Diode) Rth (j-c) ⎯ ⎯ ⎯ 2.0 °C/W Note 2: Switching time measurement circuit and input/output waveforms 30Ω 300V 15V -15V 10% 90% VGE VCE IC td (off) toff tr ton tf 10% 10% 90% 90% RG VCC RL

エミ ッタ接地 Tc=- 40℃ VGE=7V 8.5 15 20 100 120 012345 エ ミ ッタ 接地 Tc=25℃ VGE=7V 8.5 101520 100 120 012345 エミッ タ接 地 Tc=125℃ VGE=7V 8.5 910 15 100 120 02468 1 0 1 2 エミッタ接地 VCE=5V Tc=125℃ -40 0.5 1.5 2.5 3.5 -50 0 50 100 150 IC=10A 120 エミッ タ接 地 VGE=15V Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Common emitter TC = −40°C Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Common emitter TC = 125°C Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Common emitter TC = 25°C Collector-emitter saturation voltage VCE (sat) (V) Case temperature Tc (°C) VCE (sat) – Tc Common emitter VGE = 15 V Collector current I C (A) Gate-emitter voltage V GE (V) Common emitter VCE = 5 V IC – VGE

0.01 0.1 0 10 20 30 40 50 60 Tj ≤ 125°C VGG = 20 V RG = 10 Ω 3000 1 10 1000 10000 100 300 100 500 1000 VCE = 300 V エミッタ接地 RL = 6 Ω Tc = 25°C 400 0 80 160 240 320 100 200 300 200 100 0.01 0.1 1 10 100 tf toff ton tr Switching time ( μs) Gate resistance R G ( Ω) Switching Time – RG Common emitter VCC = 300 V IC = 50 A VGG = ± 15 V TC = 25°C Switching time ( μs) Collector current I C (A) Switching Time – IC Common emitter VCC = 300 V RG = 30 Ω VGG = ± 15 V TC = 25°C Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) Gate charge Q G (nC) VCE, VGE – QG Common emitter RL = 6 Ω TC = 25°C Collector-emitter voltage V CE (V) Reverse bias SOA Collector current I C (A) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) IC max (continuous) IC max (pulsed) * Collector current I C (A) Collector-emitter voltage V CE (V) Safe Operating Area *: Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. 1000 Common emitter VGE = 0 f = 1MHz TC = 25°C 1 100 1000 100 1000 10000 0.1 10 DC operation 10ms* 1ms* 100μs* 10μs* Cies Coes Cres toff ton tr tf

ダイ オード部 ＩＧＢＴ部 Tc=２５℃（無限大放熱板使用) 本ﾃﾞｰﾀは、熱抵抗制限領域にのみ適 用されます。(単発ﾊﾟﾙｽ測定) 10−5 10−3 10−2 10−1 10−410−3 10−2 10−1 100 101 Transient thermal impedance rth(j-c) (°C/W) rth(j-c) - tw Pulse width t w ( s ) Case temperature Tc (°C) IC max – Tc Maximum DC collector current I C max (A) Common emitter VGE = 15V Reverse recovery time t rr (ns) Irr, trr – IF Diode forward voltage V F (V) Common collector VGE = 0 Diode IGBT IF - VF Diode forward current I F (A) Diode forward current I F (A) Common collector di/dt = -100 A/µs VGE = 0 Tc = 25°C Peak reverse recovery current I rr (A) Curves should be applied in thermal limited area. Single non-repetitive pulse TC = 25°C (infinite heat sink) 50050 0 5 10 15 20 25 30 Tc = 125℃ -40 40 120 160 200 コレクタ接地 IF = 30 A Tc = 25°C Irr trr Irr, trr – di/dt Cj – VR f = 1 MHz Tc = 25°C 1000 1 10 100 500 300 50 30 5 3 100 300 500 di/dt (A/µs) Reverse voltage V R (V) 200 100 Reverse recovery time t rr (ns) Common collector IF = 30 A Tc = 25°C Peak reverse recovery current I rr (A) Junction capacitance C j ( p F )

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