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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS 205MAX. 4 93.340.2 © — FRD Included Between Emitter and Collector fy ye @ = Enhancement-Mode a | al | Fs e High Speed : tp = 0.30 us (Typ.) (Ic = 60 A) r 1 i vw © Fi 5 3 3] 8 e Low Saturation Voltage : VCE (sat) = 1.8 V (Typ.) (Ic = 60 A) 30 Hf 3 ae x 3 2 MAXIMUM RATINGS (Ta = 25°C) 2 pele} Collector-Emitter Voltage Vors | 400 | V 2 COLLECTOR (HEAT SINK) Gate Bmniter Volage 2 eee Collector Current a ||sEpEc _ pepe _— Bmitier Collector ra | = Foward Current [ims [Ire |30 | Collector Power Dissipation Weight : 9.75 g (Te = 25°C) Pc 180 w Storage Temperature Range —55~150 EQUIVALENT CIRCUIT Collector Gate o Emitter 1 2002-02-06
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION | aw. | ryP |max.[unrr] Gate Leakage Current IGES VGE = +25V, Vcr =0 | — | — | +500 Collector Cut-off Current ICES VcE = 400 V, Ver = 0 | — | — | 1.0] ma | Gate-Emitter Cut-off Voltage | VGE (OFF) |Ic = 60mA, Vog =5V | 30 | — | 60] V | Collector-Emitter Saturation a roan fowenversaw | ~[ of asl . VcE = 10 V, VgE = 0, tine | me Sag [owl — Po = [= esl] i [rot time | | ° wov [= Tose] — | Forward Vollage Ip=15A, Vp =0 b= p= | 20) v1 . Ip =15A, Vag =0 Reverse Recovery Time ter di/dt = —100A/ps US Thermal Resistance IGBT | = [| — | 0.96[°c/w] Thermal Resistance [Rage [Diode 208 [0 2 2002-02-06
Ic — VCE _ 10 VCE — VGE YR eee] es EIR g L. a | 2 aen)/2nenee 3 OM CESS /cemmeel Beeaicesecean HF Baca caes ny A 2 fT ieee 8 as = —===== COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE Vgg (V) VCE — VGE VCE — VGE ee | g FAA ae g EEE H sons | || eS) EE & a ee ee || | é Fs HM EP e FORCE e COT,
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| ERSSSERSS | ES SSRRRRSS Ee es a, iz 0 4 8 12 16 20 24 0 4 8 12 16 20 24 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VGE (V) Ic - VGE 4 VCE (sat) — Te ee ee . i oe oe a a fp 7 | EEEEEAA ES ee. | oe a e Gobet
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ed : RET LETTA TT LL % 2 4 6 8 10 -40 0 40 80 120 160 GATE-EMITTER VOLTAGE VgE (V) CASE TEMPERATURE Te (°C) 3 2002-02-06
— Vcr, VGE - Qa C - VcE se RL =330 Vy PN EEE ies EMITTER vee = LEA 5 SEE Yor - 4 Soo AHI TTT [|= 25 a A pas I o FA 58 a Ae ee ee SO 6B [lai eg EN SU
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& 0 40 80 120 160 200 10! 22 7S LETTE TET TTI 8s GATE CHARGE 0 1 3 10 30 100 300 1000 3000 RG @O COLLECTOR-EMITTER VOLTAGE Vc (V)
5 SWITCHING TIME — Rg 300, SAFE OPERATING AREA
tee frcmaxovrse | | UI | [TT ee || beeen 1 go Te = 25°C =e ONES ot rh VY g 1 30} —. NUNTE NEN
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2 a & lovetinos Ml NI NII NC TUT = o5|—|-L | a 10 OPERATION el E reer S pesincue | F—{r0msf HE t | SP ewe VEE He BRR a ee 1 3 10 30 100 300 1000
1 SWITCHING TIME = IC COLLECTOR-EMITTER VOLTAGE Vcg (V)
2 of = ~ | ES SSeS at || Per 2 "EAS SSS Sea] B eRe Et none eee Vou = #15 RRRRRRE:: 0.01) 0 10 20 30 40 50 60 70 COLLECTOR CURRENT Ic (A) aE rrr
REVERSE BIAS SOA 3 Rth(t) — tw 8 ooo oo LE TIT TT 8 CE A ee eee eel 5. wt Q al ti tn rosea |] TTI | TTI a Sst ct tt Sethe Seah ett ot 100 200 1000 Pee) COLLECTOR-EMITTER VOLTAGE VcE (V) PULSE WIDTH ty () Ip - Ve Trr, trr — IF 500 ar gee ooales i Z a 2, "tore CECE = » ELT TTT tty yy g PT TTL : e ott} {itt tt Botti tt td, é 2 [i tT | | YZ SE SSS" z g * 1 g Jo er 8 ge Le A Pf E 2 1 AL ||| 2 ri yyy yyy @ “Eee ET (| | bee L [| eo, ° 0 04 08 12 16 20 0 4 8 12 16 20 FORWARD VOLTAGE VF (V) FORWARD CURRENT Ip (A) oj - VR Ipr, trr — di/dt 500) ea tome 2 mf fF COMO ST Tf ta = 20 . LE LETT ireiea pe > bE - £ QS > [segtlt Nett to | al 50S & g T | | | XC Lee < ee Soh BE ps 2 OOP SS ae p>. <ann s | CIE a | CE ‘Geert So i] — =]
5 OSes Serer 2 {2 JfttTtTi ttm |
soe ee oL” fl titi titi) 1 3.5 10 30 50 «(100 300 500 40 REVERSE VOLTAGE VR (V) di/dt (A/ys) TS 9005-02-08
RESTRICTIONS ON PRODUCT USE 00070724A @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 6 2002-02-06