GT40Q322 TOSHIBA
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT40Q322 Voltage Resonance Inverter Switching Application
- Enhancement-mode
- High speed : tf = 0.14 µs (typ.) (IC = 40A)
- FRD included between emitter and collector
- The 4th generation
- TO-3P(N) (Toshiba package name) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 1200 V Gate-emitter voltage V GES ±25 V @ Tc = 100°C 20 Continuous collector current @ Tc = 25°C IC A Pulsed collector current I CP 80 A DC I F 10 Diode forward current Pulsed I FP 80 A @ Tc = 100°C 80 W Collector power dissipation @ Tc = 25°C PC 200 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R th (j-c) 0.625 °C/W Thermal resistance (diode) R th (j-c) 1.79 °C/W Equivalent Circuit Unit: mmç JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Gate Emitter Collector Preliminary
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current I CES V CE = 1200 V, VGE = 0 ― ― 5.0 mA Gate-emitter cut-off voltage V GE (OFF) I C = 40 mA, VCE = 5 V 4.0 ― 7.0 V Collector-emitter saturation voltage V CE (sat) I C = 40 A, VGE = 15 V ― 3.0 3.7 V Input capacitance C ies V CE = 10 V, VGE = 0, f = 1 MHz ― 5550 ― pF Rise time tr ― 0.18 ― Turn-on time t on ― 0.26 ― Fall time t f ― 0.14 0.21 Switching time Turn-off time t off Resistive Load VCC = 600 V, IC = 40 A VGG = ±15 V, RG = 39 Ω (Note 1) ― 0.43 ― µs Diode forward voltage V F I F = 10 A, VGE = 0 ― ― 2.0 V Reverse recovery time t rr I F = 10 A, di/dt = −20 A/µs ― 0.6 ― µs Note 1: Switching time measurement circuit and input/output waveforms 10% 90% VGE VCE IC td (off) toff tr ton tf 10% 10% 90% 90% RG VCC RL
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