Download PDFGT40Q321 TOSHIBA
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TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application /Gb7/G20The 5th generation /Gb7/G20Enhancement-mode /Gb7/G20High speed : tf = 0.41 µs (typ.) (IC = 40A) /Gb7/G20Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) /Gb7/G20FRD included between emitter and collector Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 1200 V Gate-emitter voltage V GES ±25 V @ Tc /G3d 100°C 23 Continuous collector current @ Tc /G3d 25°C IC A Pulsed collector current I CP 80 A DC I F 10 Diode forward current Pulsed I FP 80 A @ Tc /G3d 100°C 68 W Collector power dissipation @ Tc /G3d 25°C PC 170 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R th (j-c) 0.74 °C/W Thermal resistance (diode) R th (j-c) 1.79 °C/W Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Gate Emitter Collector
Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±25 V, VCE = 0 ― ― ±500 nA Collector cut-off current I CES V CE = 1200 V, VGE = 0 ― ― 5.0 mA Gate-emitter cut-off voltage V GE (OFF) I C = 40 mA, VCE = 5 V 4.0 ― 7.0 V /G20 Collector-emitter saturation voltage V CE (sat) I C = 40 A, VGE = 15 V ― 2.8 3.6 V /G20 Input capacitance C ies V CE = 10 V, VGE = 0, f = 1 MHz ― 3200 ―/G20 pF Rise time tr ― 0.19 ― Turn-on time t on ―/G20 0.25 ―/G20 Fall time t f ―/G20 0.41 0.72 Switching time Turn-off time t off Resistive Load VCC = 600 V, IC = 40 A VGG = ±15 V, RG = 39 /G57 µs Diode forward voltage V F I F = 10 A, VGE = 0 ― ― 2.0 V Reverse recovery time t rr I F = 10 A, di/dt = −20 A/µs ― 0.6 ― µs Note 1: Switching time measurement circuit and input/output waveforms 10% 90% VGE VCE IC td (off) toff tr ton tf 10% 10% 90% 90% RG VCC RL General Safety Precautions and Usage Considerations /Gb7/G20The GT40Q321 is only intended for single-transistor voltage resonant circuits in induction heating (IH) equipment. For other applications, please contact your nearest Toshiba sales office. /Gb7/G20Do not use devices under conditions in which their maximum ratings will be exceeded. A device may break down or its performance may be degraded, causing it to catch fire or explode resulting in injury to the user. It is therefore necessary to incorporate device derating into circuit design. /Gb7/G20In all IGBT devices, maximum collector-emitter voltage (VCES) decreases when the junction temperature becomes low. It is therefore necessary to incorporate device derating into circuit design. /Gb7/G20Maximum collector current is calculated from Tj MAX.(150°C), the thermal resistance and DC forward power dissipation. However it’s limited in real application by another factors such as switching loss, limitation of the inner bonding wires and so on.
/G2d40Tc /G3d 125°C 4 8 12 16 12 15 20 1 2 3 4 5 VGE /G3d 8 V Common emitter Tc /G3d 25°C Collector current I C (A) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE ( V ) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) Common emitter VGE /G3d 15 V IC /G3d 10 A /G2d60 /G2d20 20 60 140 100 Common emitter Tc /G3d 125°C IC /G3d 10 A 5 10 15 20 25 Common emitter Tc /G3d 25°C IC /G3d 10 A 5 10 15 20 25 Common emitter Tc /G3d /G2d40°C IC /G3d 10 A 5 10 15 20 25
Tj /Ga3 125°C VGG /G3d 20 V RG /G3d 10 /G57 1000 300 3000 3 30 300 3000 1 3 300 1000010 100 3000 300 5000 3000 100 500 1000 30 1000 *Single non-repetitive pulse Tc /G3d 25°C Curves must be derated linearly with increases in temperature. IC max (pulsed)* IC max (continuous) DC operation 1 ms* 10 ms* 100 /G6ds* 10 /G6ds* Common emitter VCC /G3d 600 V IC /G3d 40 A VGG /G3d ±15 V Tc /G3d 25°C toff ton tr tf 0.01 1 10 100 10003 30 300 0.1 0.03 0.05 0.3 0.5 Common emitter VCC /G3d 600 V RG /G3d 39 /G57 VGG /G3d ±15 V Tc /G3d 25°C toff 0.01 ton tr tf 10 20 30 40 50 0.1 0.03 0.05 0.3 0.5 100 200 300 400 50 100 150 200 Common emitter RL /G3d 7.5 /G57 Tc /G3d 25°C
200 V100 V
Collector current I C (A) Switching time ( /G6ds) Gate-emitter voltage V GE (V) Gate charge Q G ( n C ) VCE, VGE – QG Collector-emitter volgate V CE ( V ) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Collector current I C (A) Switching time – IC Switching time ( /G6ds) Gate resistance R G ( /G57) Switching time – RG Collector-emitter voltage V CE (V) Safe operating area Collector-emitter voltage V CE (V) Reverse bias SOA Collector current I C (A) 0.1 100 1000 5000 50000 1 10 100 1000 Common emitter VGE /G3d 0 f /G3d 1 MHz Tc /G3d 25°C Cres 10000 300 500 3000 30000 0.3 3 30 300 Coes Cies
0.2 0.4 0.8 10 50 0.6 20 30 40 Common collector di/dt /G3d /G2d20 A//G6ds Tc /G3d 25°C trr Irr Common collector IF /G3d 10 A Tc /G3d 25°C 0.0 0.2 0.6 0.8 1.0 50 100 150 200 250 0.4 trr Irr 0 1 2 3 4 Common collector VGE /G3d 0 /G2d40 25 Tc /G3d 125°C Common emitter VGE /G3d 15 V 25 50 75 100 125 150 Reverse recovery time t rr ( /G6ds) Reverse recovery time t rr ( /G6ds) Case temperature Tc (°C) ICmax – T c Maximum DC collector current I Cmax (A) Pulse width t w (s) rth (t) – tw Transient thermal impedance rth (t) ( ° C / W ) Forward voltage V F (V) IF – VF Forward current I F (A) Reverse recovery current I rr (A) Forward current I F (A) trr, Irr – IF Reverse recovery current Irr ( A ) di/dt (A /G2f/G6ds) trr, Irr – di/dt 10/G2d3 10/G2d5 10/G2d1 100 10/G2d4 102 102 10/G2d2 10/G2d1 101 10/G2d3 100 10/G2d2 101 Tc /G3d 25°C Diode stage IGBT stage
/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE