GT40M101 TOSHIBA

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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm « High Input Impedance Poe d + High Speed : tp=0.4ys (Max.) 3 i | + Low Saturation Voltage : VOR(sat)=3.4V (Max.) a te TL « Enhancement-Mode 20 i ( | i 3 MAXIMUM RATINGS (Ta = 25°C) 5.45202 54502 1 eat CHARACTERISTIC SYMBOL 2 o4,a.,°°" == =\\—_ Ss Collector Emitter Voltage Voss | 90 | v | ess Gate-Emitter Voltage VGES Collector Current c A 2. COLLECTOR [| ims | top | 80 | 3_ EMITTER Junin Tampenii 16 Junction Temperature Tj 150 C_|\\rosHBA 216F Storage Temperature Range _| Temperature Range [ Tete | | -55~150 | | sc | Weight : 5.85 [Screw Torque Pm ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION xan. | rye. [max.|unrr] [Gate Leakage Gunent | lous |Vou=226V, von-0 | — | — [2000] =a | Collector Cut-off Current Icrs _|VoR=900V, Von=0 [| — | — | 10] ma | Gate-Emitter Cut-off Voltage |V@Rorr) [Io=40mA, Vop=5V [30 | — | eo] v | Collector-Emitter WcR(sat)(1)| IC=8A, VoE=15V | — | — | 2a! Vv Saturation Voltage Tg=40A, Vop=15V [| — | 24] 37] Vor=30V. Ven=0.f=1maz | — | 2100] — | oF | C= | 00 | 00] , 62.0. —15V 9610016442 halfunction or fa due to ther inherent electrical senstivy and wuinerapity to physial sess. fis the responsi of the buyer, when utliing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranger az tet forth in the most recent products specihcations. Also, Please Keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-10-13 1/4

100, Ic - VCE s 4 VCE — VGE s couwox [| [gfe [Td = LET TIT TT TT goxarox B [rare | [oof /| Tal | S fT TW | | Tf | re--are @vEHEE) /GEREMME Mpa SIEEEETE Ea g EAE o, EER | g | 2 e/a z He etet+ +--+ Hq oe eee s Jt) Wet Eee) | Ee GE=' ry r 2 3 4 6 8 i 4 8 1216 20 24 COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) S 16 VCE - VGE ~ VcE - VGE o HA | . % HA | i | | 8 || eee Entre ee ee | eee ee eel ee es ft time te tt tT co el SLT TM ET | 5 TT MNT ET ey Ee --imeT tT TTT tt E Ce a Lite TPT z Be Cee re | Sa Pe i ey 2 OD Dee S| eS beeoesceeoee oP Ee itfes=F FERPA 0 4 8 12 16 20 24 © % 4 8 12 16 20 24 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) woo Ic - VGE Vcx(at) — Te - jeuiees | ft} i I z | como T ] [tT | EERE FH gg De © ze PCOCOCo Sie EE ae ee Ye = x= TT » | 2 yf TT AE Be 1 To=108 ESF PS 2 = 6 8 10 ar) 0 40 80 120 160 GATE-EMITTER VOLTAGE VGE (V) CASE TEMPERATURE Te (°C) @ The information contained herein is presented only as a guide for the applications ‘of our products. No responsibility is assumed = toon COneEAMEN’ foray inttngemens of steel drapery other ahs oe Md pars rch may tes om Hue. No Tense greed by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. 1997-10-13 2/4

S VCE, VGE - 9G 5 SWITCHING TIME — RG S 20 % “CT TT TTYL cmon FH 2 | | ttt tA | 9) errren 58 ag TA _ | voomoow =| LTT TT 8 att tA ef Yonge Zt 2 = oS ton

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= s EEE at aot | ze f_ \\\\vee=v 7 TT TT 2 os itt 1 are BEI rT WLY TT) 3 a a ae ae SE Sat COMMON EMITTER E oti | | eee 22 Less l_| 3.750 = ol FOL

28 DASE Rass @ “Ui beer tT ||

Se 4 wo Te=25C ——> | & FSS ize = ~ | Sse tt tT LF | 5 0 40 80 120 160 5 10 30 «50 100 300 500 GATE CHARGE Qg (nC) GATE RESISTANCE Rg (Qy SWITCHING TIME - Ic C - VcE 3 10000 COMMON EMITTER TT Ji] oo ee Yoon oy Roe aaa - MER = SS SS eS SS a | Ss fe Sees Zo: 2 | EE 8 poe eee Sod OTIR CSS 8 ost | | | 2 109 Pe =—— < COMMON HSER Coes] a | | ae ff an S 50} EMITTER SSH TTT) = RSS} oa A Se 0 10 20 30 40 50 60 0 3.5 10 30 50 100 300 500 COLLECTOR CURRENT Ic (A) COLLECTOR-EMITTER VOLTAGE Vcr (V)

500 REVERSE BIAS SOA Rth() — tw

2 ie Vop= 20Y 8 EPH etait eeHi craig Te 25°C. s 100] {jt tii {|_| | Rg=100 a Co CT ue X z ae,

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300) a a | BL € Tg MAX. ATTN ms WEEN 5 a KONA TT BLL Ni ALN Noo LTT Samm ANTAL NT EB 1joPeramion i — NCEE ah 3 es ne ts

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Ine deere |\\ | | NUNN NT UTI pease \\ [NIL IIl 1 |TEMPERATURE. N 1310 80 100 800 1000 COLLECTOR-EMITTER VOLTAGE Vcg (V) 1997-10-13 4/4