GT30J121 TOSHIBA

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 6

Technical content

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications

  • The 4th generation
  • Enhancement-mode
  • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: t f = 0.05 µs (typ.) Low switching loss : E on = 1.00 mJ (typ.) : E off = 0.80 mJ (typ.)
  • Low saturation voltage: VCE (sat) = 2.0 V (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 600 V Gate-emitter voltage V GES ±20 V DC I C 30 Collector current 1 ms I CP 60 A Collector power dissipation (Tc = 25°C) PC 170 W Junction temperature T j 150 °C Storage temperature range T stg −55 to 150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance R th (j-c) 0.735 °C/W Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.6 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±20 V, VCE = 0 ― ― ±500 nA Collector cut-off current I CES V CE = 600 V, VGE = 0 ― ― 1.0 mA Gate-emitter cut-off voltage V GE (OFF) I C = 3 mA, VCE = 5 V 3.5 ― 6.5 V Collector-emitter saturation voltage V CE (sat) I C = 30 A, VGE = 15 V ― 2.0 2.45 V Input capacitance C ies V CE = 10 V, VGE = 0, f = 1 MHz ― 4650 ― pF Turn-on delay time t d (on) ― 0.09 ― Rise time t r ― 0.07 ― Turn-on time t on ― 0.24 ― Turn-off delay time t d (off) ― 0.30 ― Fall time t f ― 0.05 ― Switching time Turn-off time t off ― 0.43 ― µs Turn-on switching loss Eon ― 1.00 ― Switching loss Turn-off switching loss Eoff Inductive Load VCC = 300 V, IC = 30 A VGG = +15 V, RG = 24 Ω (Note 1) (Note 2) ― 0.80 ― mJ Note 1: Switching time measurement circuit and input/output waveforms Note 2: Switching loss measurement waveforms 10% 90% VGE VCE IC Eoff Eon 0 5% 10% 90% VGE VCE IC td (off) toff td (on) tr ton tf 10% 10% 10% 90% 10% 90% GT30J324 RG IC VCE L VCC −VGE

Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) IC – VGE Collector current I C (A) Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage V CE (sat) (V) 0 1 2 3 4 5 Common emitter Tc = 25°C 15 20 VGE = 8 V 0 4 8 12 16 20 Common emitter Tc = −40°C IC = 10 A 0 4 8 12 16 20 Common emitter Tc = 25°C IC = 10 A 0 4 8 12 16 20 Common emitter Tc = 125°C IC = 10 A 0 4 8 12 16 20 Common emitter VCE = 5 V −40 Tc = 125°C Common emitter VGE = 15 V −60 −20 20 60 100 140 IC = 10 A

Collector current I C (A) Switching time t off, tf, td (off) ( µ s ) Switching time t on, tr, td (on) – RG Switching time t on, tr, td (on) ( µ s ) Switching time t on, tr, td (on) – IC Switching time t on, tr, td (on) ( µ s ) Switching time t off, tf, td (off) – RG Switching time t off, tf, td (off) ( µ s ) Collector current I C (A) Switching time t off, tf, td (off) – IC Switching loss E on, Eoff – RG Collector current I C (A) Switching loss E on, Eoff – IC Switching loss E on, Eoff ( m J ) Gate resistance R G ( Ω) Gate resistance R G ( Ω) Gate resistance R G ( Ω) Switching loss E on, Eoff ( m J ) Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25°C : Tc = 125°C (Note 2) 1 10 30 100 300 1000 3 Eoff 0.1 0.3 Eon 0.3 0.01 0.03 0.1 0 5 10 15 20 25 30 Common emitter VCC = 300 V VGG = 15 V RG = 24 Ω : Tc = 25°C : Tc = 125°C (Note 1) td (on) tr ton 0.01 0 5 10 15 20 25 30 0.3 0.03 0.1 Common emitter VCC = 300 V VGG = 15 V RG = 24 Ω : Tc = 25°C : Tc = 125°C (Note 1) toff td (off) tf 0.01 0 5 10 15 20 25 30 0.3 0.03 0.1 Common emitter VCC = 300 V VGG = 15 V RG = 24 Ω : Tc = 25°C : Tc = 125°C (Note 2) Eoff Eon 1 10 30 100 300 1000 3 0.1 0.3 0.01 0.03 toff tf Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25°C : Tc = 125°C (Note 1) td (off) Common emitter VCC = 300 V VGG = 15 V IC = 30 A : Tc = 25°C : Tc = 125°C (Note 1) 1 0.3 0.1 0.01 1 10 30 100 300 1000 3 0.03 ton td (on) tr

Transient thermal resistance r th (t) (°C/W) Collector current I C (A) Collector-emitter voltage V CE (V) C – VCE Capacitance C (pF) Gate-emitter voltage V GE (V) Gate charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C (A) Collector-emitter voltage V CE (V) Reverse Bias SOA Pulse width t w (s) rth (t) – tw 0 40 80 120 160 200 100 200 300 400 500 VCE = 100 V Common emitter RL = 10 Ω Tc = 25°C 300 200 Tj ≤ 125°C VGE = 15 V RG = 24 Ω 0.1 100 0.3 3 10 30 300 100 1000 10−5 10 −4 10 −2 10 −1 102 10−4 10−3 10−2 10−1 101 102 100 10−3 10 0 10 1 Tc = 25°C 0.1 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 10000 100 300 1000 3000 10 100 1000 30 0.3 1 3 Cies Coes Cres 300 *: Single pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 100 µs* 50 µs* 1 ms* 10 ms* DC operation IC max (continuous) IC max (pulsed)* 0.3 3 10 30 300 100 0.1 100 1000

  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
  • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
  • The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE