GT25Q301_06 TOSHIBA

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Technical content

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Motor Control Applications

  • Third-generation IGBT
  • Enhancement mode type
  • High speed: t f = 0.32 μs (max)
  • Low saturation voltage: VCE (sat) = 2.7 V (max)
  • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC I C 25 Collector current 1 ms ICP 50 A DC I F 25 Diode forward current 1 ms IFP 50 A Collector power dissipation (Tc = 25°C) PC 200 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Gate Emitter Collector GT25Q301 TOSHIBA JAPAN Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES V GE = ±20 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES V CE = 1200 V, VGE = 0 ― ― 1.0 mA Gate-emitter cut-off voltage VGE (OFF) I C = 2.5 mA, VCE = 5 V 4.0 ― 7.0 V Collector-emitter saturation voltage V CE (sat) I C = 25 A, VGE = 15 V ― 2.1 2.7 V Input capacitance Cies V CE = 50 V, VGE = 0, f = 1 MHz ― 1360 ― pF Rise time tr ― 0.10 ― Turn-on time ton ― 0.30 ― Fall time tf ― 0.16 0.32 Switching time Turn-off time toff Inductive load VCC = 600 V, IC = 25 A VGG = ±15 V, RG = 43 Ω (Note) ― 0.68 ― μs Diode forward voltage VF I F = 25 A, VGE = 0 ― ― 3.0 V Reverse recovery time trr I F = 25 A, di/dt = −200 A/μs ― ― 350 ns Thermal resistance (IGBT) Rth (j-c) ― ― ― 0.625 °C/W Thermal resistance (diode) Rth (j-c) ― ― ― 1.38 °C/W Note: Switching time measurement circuit and input/output waveforms 10% 90% VGE VCE IC td (off) toff td (on) t r tf 10%10% 10% 90% 10% 90% ton RG IC VCE L VCC −VGE RG

Gate-emitter voltage V GE (V) Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Collector current I C (A) Gate-emitter voltage V GE (V) Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) Collector current I C (A) Case temperature Tc (°C) Collector-emitter saturation voltage VCE (sat) (V) IC – VCE VCE – VGE VCE – VGE VCE – VGE IC – VGE VCE (sat) – Tc 0 1 2 3 4 5 VGE = 9 V Common emitter Tc = 25°C 15 20 0 4 8 12 16 20 Common emitter Tc = −40°C 50 25 IC = 10 A 0 4 8 12 16 20 Common emitter Tc = 25°C IC = 10 A 0 4 8 12 16 20 Common emitter Tc = 125°C IC = 10 A 0 4 8 12 16 20 Tc = 125°C Common emitter VCE = 5 V −40 −60 −20 20 60 100 140 Common emitter VGE = 15 V IC = 10 A

Gate resistance R G ( Ω) Collector current I C (A) Switching time t off, tf ( μs) Collector current I C (A) Switching loss E on, Eoff (mJ) Gate resistance R G ( Ω) Gate resistance R G ( Ω) Collector current I C (A) Switching time t on, tr ( μs) Switching Time t on, tr – RG Switching Time t off, tf – RG Switching Loss E on, Eoff – RG ton 5 10 30 50 100 3 500 tr 0.05 0.3 0.5 300 0.1 Common emitter VCC = 600 V VGG = ±15 V IC = 25 A : Tc = 25°C : Tc = 125°C tf 5 10 30 50 100 3 500 toff 0.05 0.3 0.5 300 0.1 Common emitter VCC = 600 V VGG = ±15 V IC = 25 A : Tc = 25°C : Tc = 125°C Eoff 5 10 30 50 100 3 500 Eon 0.5 300 Common emitter VCC = 600 V VGG = ±15 V IC = 25 A : Tc = 25°C : Tc = 125°C Switching Time t on, tr – IC Switching Time t off, tf – IC Switching Loss E on, Eoff – IC 5 10 0 0.3 0.1 0.01 0.03 15 20 25 30 Common emitter VCC = 600 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C tr ton 5 10 0 0.3 0.1 0.01 0.03 15 20 25 30 Common emitter VCC = 600 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C tf toff 5 10 0 0.1 0.3 15 20 25 30 Common emitter VCC = 600 V VGG = ±15 V RG = 43 Ω : Tc = 25°C : Tc = 125°C Eoff Eon Switching time t on, tr ( μs) Switching loss E on, Eoff (mJ) Switching time t off, tf ( μs)

Gate-emitter voltage V GE (V) Gate charge Q G (nC) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Collector current I C (A) Collector-emitter voltage V CE (V) Collector current I C (A) Collector-emitter voltage V CE (V) Capacitance C (pF) Safe Operating Area Forward voltage V F ( V ) Forward current I F (A) Reverse recovery current I rr (A) Reverse recovery time t rr (ns) Forward current I F (A) VCE, VGE – QG C – VCE 0.3 1 0.1 300 100 1000 3000 10000 3 10 30 300 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25°C Cies Coes Cres 100 Common emitter RL = 12 Ω Tc = 25°C 40 80 120 160 200 200 400 600 800 1000 VCE = 200 V 600 400 Reverse Bias SOA 0.3 1 3 10 0.5 30 100 300 3000 1000 0.1 100 Tj ≤ 125°C VGE = ±15 V RG = 43 Ω IF – VF 0 1 2 3 4 5 Tc = 125°C Common emitter VGE = 0 −40 trr, Irr – IF 0 5 10 15 20 30 100 Common emitter di/dt = −200 A/μs VGE = 0 : Tc = 25°C : Tc = 125°C trr Irr 100 1000 0.3 1 3 10 0.5 30 100 300 3000 1000 0.1 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* IC max (continuous) DC operation 1 ms* 100 μs* 50 μs* 10 ms*

Pulse width t w (s) Transient thermal impedance rth (t) ( ° C / W ) rth (t) – tw 10−3 102 10−5 10 −4 10 −3 10 −2 10 −1 10 0 10 1 10 2 10−2 10−1 100 101 10−4 Tc = 25°C Diode stage IGBT stage

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
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