GT25Q102 TOSHIBA

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications /Gb7/G20The 3rd Generation /Gb7/G20Enhancement-Mode /Gb7/G20High Speed: t f = 0.32 µs (max) /Gb7/G20Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta /G3d/G3d/G3d/G3d 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage V CES 1200 V Gate-emitter voltage V GES /Gb120 V DC I C 25 Collector current 1 ms I CP 50 A Collector power dissipation (Tc /G3d 25°C) PC 200 W Junction temperature T j 150 °C Storage temperature range T stg /G2d55~150 °C Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.)

Electrical Characteristics (Ta /G3d/G3d/G3d/G3d 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE /G3d /Gb120 V, VCE /G3d 0 /Gbe /Gbe /Gb1500 nA Collector cut-off current I CES V CE /G3d 1200 V, VGE /G3d 0 /Gbe /Gbe 1.0 mA Gate-emitter cut-off voltage V GE (OFF) I C /G3d 2.5 mA, VCE /G3d 5 V 4.0 /Gbe 7.0 V /G20 Collector-emitter saturation voltage V CE (sat) I C /G3d 25 A, VGE /G3d 15 V /Gbe 2.1 2.7 V /G20 Input capacitance C ies V CE /G3d 50 V, VGE /G3d 0, f /G3d 1 MHz /Gbe 1360 /Gbe/G20pF Rise time t r /Gbe 0.10 /Gbe Turn-on time t on /Gbe/G200.30 /Gbe/G20 Fall time t f /Gbe/G200.16 0.32 Switching time Turn-off time t off Inductive Load VCC /G3d 600 V, IC /G3d 25 A VGG /G3d /Gb115 V, RG /G3d 43 /G57 (Note1) /Gbe 0.68 /Gbe/G20 /G6ds Thermal resistance R th (j-c) /Gbe /Gbe /Gbe 0.625 °C/W Note1: Switching time measurement circuit and input/output waveforms Note2: Switching loss measurement waveforms GT25Q301 RG IC VCE L V CC /G2dVGE 10% 90% VGE VCE IC td (off) toff td (on) t r ton tf 10%10% 10% 90% 10% 90% 10% 90% VGE VCE IC Eoff E on 0 10%

Collector current I C (A) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 0 1 2 3 4 5 VGE /G3d 9 V Common emitter Tc /G3d 25°C 15 20 0 4 8 12 16 20 Common emitter Tc /G3d /G2d40°C IC /G3d 10 A 0 4 8 12 16 20 Common emitter Tc /G3d 25°C IC /G3d 10 A 0 4 8 12 16 20 Common emitter Tc /G3d 125°C IC /G3d 10 A 0 4 8 12 16 20 Tc /G3d 125°C Common emitter VCE /G3d 5 V /G2d40 /G2d60 /G2d20 20 60 100 140 Common emitter VGE /G3d 15 V IC /G3d 10 A

Gate resistance R G ( /G57) Switching time t on, tr – RG Switching time t on, tr ( /G6ds) Gate resistance R G ( /G57) Switching time t off, tf – RG Switching time t off, tf ( /G6ds) Gate resistance R G ( /G57) Switching loss E on, Eoff – RG Switching loss E on, Eoff ( m J ) Collector current I C (A) Switching time t on, tr – IC Switching time t on, tr ( /G6ds) Collector current I C (A) Switching time t off, tf – IC Switching time t off, tf ( /G6ds) Collector current I C (A) Switching loss E on, Eoff – IC Switching loss E on, Eoff ( m J ) 0.3 0.5 0.1 ton tr Common emitter VCC /G3d/G20600 V VGG /G3d/G20/Gb115 V IC /G3d 25 A : Tc /G3d 25°C : Tc /G3d 125°C 5 10 30 50 100 3 500 0.05 300 5 10 0 0.3 0.1 0.01 0.03 15 20 25 30 Common emitter VCC /G3d/G20600 V VGG /G3d/G20/Gb115 V RG /G3d/G2043 /G57 : Tc /G3d 25°C : Tc /G3d 125°C tr ton 0.5 0.05 5 10 0 0.3 0.1 0.01 0.03 15 20 25 30 Common emitter VCC /G3d/G20600 V VGG /G3d/G20/Gb115 V RG /G3d/G2043 /G57 : Tc /G3d 25°C : Tc /G3d 125°C tf toff 0.5 0.05 0.05 0.3 0.5 0.1 tf toff Common emitter VCC /G3d/G20600 V VGG /G3d/G20/Gb115 V IC /G3d 25 A : Tc /G3d 25°C : Tc /G3d 125°C 5 10 30 50 100 3 500 300 0.5 5 10 30 50 100 3 500 300 Eoff Eon Common emitter VCC /G3d/G20600 V VGG /G3d/G20/Gb115 V IC /G3d 25 A : Tc /G3d 25°C : Tc /G3d 125°C Note2 5 10 0 0.1 0.3 15 20 25 30 Common emitter VCC /G3d/G20600 V VGG /G3d/G20/Gb115 V RG /G3d/G2043 /G57 : Tc /G3d 25°C : Tc /G3d 125°C Note2 Eoff Eon 0.5

Transient thermal impedance Rth (t) ( ° C / W ) Collector current I C (A) Gate-emitter voltage V GE (V) Gate charge Q G (nC) VCE, VGE – QG Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) Safe operating area Collector current I C (A) Collector-emitter voltage V CE (V) Reverse bias SOA Pulse width t w (s) Rth (t) – tw Capacitance C (pF) Collector-emitter voltage V CE (V) C – VCE 0.3 1 0.1 300 100 1000 3000 10000 3 10 30 300 1000 Common emitter VGE /G3d 0 f /G3d/G201 MHz Tc /G3d/G2025°C Cies Coes Cres 100 Common emitter RL /G3d 12 /G57 Tc /G3d/G2025°C 40 80 120 160 200 200 400 600 800 1000 VCE /G3d 200 V 600 400 0.3 1 3 10 0.5 30 100 300 3000 1000 0.1 100 Tj /G3c/G3d125°C VGE /G3d/G20/Gb115 V RG /G3d 43 /G57 0.3 1 3 10 0.5 30 100 300 3000 1000 0.1 100 *: Single nonrepetitive pulse Tc /G3d 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* IC max (continuous) DC operation 1 ms* 100 /G6ds* 50 /G6ds* 10 ms* 10/G2d3 102 10/G2d5 10/G2d4 10/G2d3 10/G2d2 10/G2d1 100 10 1 10 2 10/G2d2 10/G2d1 100 101 10/G2d4 Tc /G3d 25°C

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE