GT25G101SM TOSHIBA

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TOSHIBA GT25G101(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS Unit in mm @ High Input Impedance 10.3MAx. . 5.0 1.32 ¢ — Low Saturation Voltage : VCE (sat)=8V (Max.) (I¢=170A) oe — @ = Enhancement-Mode - on © 12V Gate Drive ¥ 2 up St 076 3 MAXIMUM RATINGS (Ta = 25°C) 254 254 CHARACTERISTIC SYMBOL | RATING 5 Fat % nt irda [2 Collector Emitter Voltage Vous_|_400 |v] este Gate-Emitter Voltage VGES Collector Current C Z 17 A 2. COLLECTOR (HEAT SINK) | ims | Icp [170 | 3. EMITTER Dissipation Te=25°C A | peepee = Storage Temperature Range —55~150 TOSHIBA __2-10S2C Weight : 1.4g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current IGES VGE=+25V, VcE=0 | — | — [+100 Collector Cut-off Current IcES VcE=400V, VGE=0 [ — | — | 10] pA | Gate-Emitter Cut-off Voltage | Vcr (OFF) |Ic=1mA, VcR=5V | 4[ 5{ 7] Vv | Collector-Emitter Input Capacitance Vcn=10V, Van=0, f=IMHz | — | 2000| — | pF | .. = “Ss Time Fall Time | t _| Vin: t $100ns Thermal Resistance PRage [| id — | — [286 070] @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or ‘other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-09-28 1/3

TOSHIBA GT25G101(SM) Ic — VCE = 1 VCE - VGE 200) S 2 "CTL s Poa 8 CoCo

2 CS s COO

e to |W LL e OC OPeee gC Pee 2 COCO eee ee) 22-——— ce : N CWO 2 COCOA eer cs 2 5 enorme EES \\, 42 eo 0 2 4 6 8 10 12 0 4 8 12 16 20 24 COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE-EMITTER VOLTAGE VgE (V) VCE - VGE 7 VCE - VGE ; ES: TEP 2 2 e ‘COLOMMMIELe ee LATHES) 2 ESPEN Se e ECeoibtcNkee] s Popo SS COCOA Se CSS] E 4 > a E 4 NI B ‘COCCI ORS B COCOA NSEC SPP See EE § PCCCPNE ECE

3 Te=25°C 3 Te=125°C

3 4 8 20 24 8 % 4 8 12 16 20 24 GATE-EMITTER VOLTAGE VgE (V) GATE-EMITTER VOLTAGE VgE (V) Ic - VGE i VCE (sat) — Te 200) CAC: | 2a 7, e“CCUCLP LAS Lo} SCOP cd : Seec>> acne a PEELRAF EEE, EEE g E 5= acs a COCOA) ‘eee S } 38 ee al =e Snes) See ee e222 eee To eee] PRR (LTE scene BOPP GATE-EMITTER VOLTAGE VgE (V) CASE TEMPERATURE Te (°C) 4898-09-28 2/3

TOSHIBA GT25G101(SM) son C - VcE = 00 VcE, VGE - 9G 05 4 5 SS = Vcomon ener || | | IA|” 5 ye fee A © aod SESH ite ot ttle TT, & : SUR LRiANaNca 2 fL_liiw AE a EEPTTTTT § ee eee | Z| | vee-oorl | TT | tt = I & PAE] TE ELT Ty = 3s 3 — HSS ree Hl 2 100 5 &

1 CTI TSS Gree TTT Be UIVELELELL ey)’ &

LTE Th 2 PP) Nery}. 10 3 5 10 380 50 100 800500 1000 8 (S| COLLECTOR-EMITTER VOLTAGE Vcg (V) GATE CHARGE Qg (nC) SWITCHING TIME — Rg TT commas TOM T_T Ff LT iii] COMMON EMITTER 0 @ fH vce=*v, ten Sof BRS Mowe Teme 5 pd 2 — 2 Voouwon mueren CIA | COMIM e Corr rere fee TT === SS SSS — 6 ray = RIESE a ae eS ee | ost TT ee If nZaaneanaeem i=? ail ee lll oti titilie wt FRE COLLECTOR CURRENT Ic (A) GATE RESISTANCE Rg (Q)

20 MINIMUM GATE DRIVE AREA 200 MAXIMUM OPERATING AREA

4 , 2 “COU POTTY veuesiov ee ye & sd Xo = } he doesn fh | ty | e EEN Boo Oe 7 3 LLL verte a LTT TTT At Ty | g CETL TTT TIN Bese g of net & ao ETT NET TT ge Lit itt per | yy g ELT TTT inti ty ae ogi ti tiAT ity 2 ott ttt ttt TIN TT ee ee zg Titi t tt ttt yyy = ~LP yr s PPro gE 0 4 8 12 16 20 24 28 80 100 120 140 160 180 200 220 GATE-EMITTER VOLTAGE VgE (V) PEAK COLLECTOR CURRENT Icp (A) 1998-09-28 3/3