GT100DA120U VISHAY

Document overview

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Technical content

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A GT100DA120U Vishay Semiconductors Document Number: 93196 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

FEATURES

  • Trench IGBT technology with positive temperature coefficient
  • Square RBSOA
  • 10 μs short circuit capability
  • H E X F R E D ® antiparallel diodes with ultrasoft reverse recovery
  • T J maximum = 150 °C
  • Fully isolated package
  • Very low internal inductance ( 5 nH typical)
  • Industry standard outline
  • UL approved file E78996
  • Compliant to RoHS directive 2002/95/EC BENEFITS
  • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating
  • Easy to assemble and parallel
  • Direct mounting to heatsink
  • Plug-in compatible with other SOT-227 packages
  • Speed 4 kHz to 30 kHz
  • Very low V CE(on)
  • Low EMI, requires less snubbing Note (1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals PRODUCT SUMMARY VCES 1200 V IC DC 100 A at 119 °C VCE(on) typical at 100 A, 25 °C 1.73 V SOT-227 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TE ST CONDITIONS MAX. UNIT S Collector to emitter voltage V CES 1200 V Continuous collector current I C (1) TC = 25 °C 258 A TC = 80 °C 174 Pulsed collector current I CM 450 Clamped inductive load current I LM 450 Diode continuous forward current I F TC = 25 °C 50 TC = 80 °C 34 Peak diode forward current I FSM 180 Gate to emitter voltage V GE ± 20 V Power dissipation, IGBT P D TC = 25 °C 893 W TC = 119 °C 221 Power dissipation, diode P D TC = 25 °C 176 TC = 119 °C 44 Isolation voltage V ISOL Any terminal to case, t = 1 min 2500 V

Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 93196 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10 ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TE ST CONDITIONS MIN. TYP. MAX. UNIT S Collector to emitter breakdown voltage V BR(CES) VGE = 0 V, IC = 250 μA 1200 - - VCollector to emitter voltage V CE(on) VGE = 15 V, IC = 100 A - 1.73 2.1 VGE = 15 V, IC = 100 A, TJ = 125 °C - 1.98 2.2 Gate threshold voltage V GE(th) VCE = VGE, IC = 7.5 mA 4.9 5.9 7.9 Temperature coefficient of threshold voltage V GE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 17.6 - mV/°C Collector to emitter leakage current I CES VGE = 0 V, VCE = 1200 V - 0.6 100 μA VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.6 10 mA Forward voltage drop V FM IF = 40 A, VGE = 0 V - 2.81 3.3 V IF = 40 A, VGE = 0 V, TJ = 125 °C - 3.07 3.4 Gate to emitter leakage current I GES VGE = ± 20 V - - ± 200 nA SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TE ST CONDITIONS MIN. TYP. MAX. UNIT S Turn-on switching loss E on IC = 100 A, VCC = 720 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 25 °C Energy losses include tail and diode recovery (see fig. 20) -5 . 2- mJ Turn-off switching loss E off -7 . 1- Total switching loss E tot - 12.3 - Turn-on switching loss E on IC = 100 A, VCC = 720 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 125 °C -6 . 1- Turn-off switching loss E off -9 . 8- Total switching loss E tot - 15.9 - Turn-on delay time t d(on) - 350 - ns Rise time t r -7 5- Turn-off delay time t d(off) - 374 - Fall time t f - 493 - Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 450 A, Rg = 22  VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V, L = 500 μH Fullsquare Diode reverse recovery time t rr IF = 50 A, dIF/dt = 200 A/μs, Vrr = 400 V - 164 194 ns Diode peak reverse current I rr -1 2 1 5A Diode recovery charge Q rr - 994 1455 nC Diode reverse recovery time t rr IF = 50 A, dIF/dt = 200 A/μs, Vrr = 400 V, TJ = 125 °C - 230 273 ns Diode peak reverse current I rr - 16.5 20 A Diode recovery charge Q rr - 1864 2730 nC Short circuit safe operating area SCSOA VGE = 15 V to 0 V, VCC = 900 V, Vp = 1200 V 10 μs

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Vishay Semiconductors Document Number: 93196 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V Fig. 3 - Typical IGBT Collector Current Characteristics VGE = 15 V Fig. 4 - Maximum DC Forward Current vs. Case Temperature THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT S Maximum junction and storage temperature range T J, TStg - 40 - 150 °C Junction to case IGBT RthJC - - 0.14 °C/WDiode - - 0.71 Case to sink per module R thCS -0 . 1- Mounting torque, 6-32 or M3 screw - - 1.3 Nm Weight - 30 - gAllowable Case Temperature (°C) IC - Continuous Collector Current (A) 93196_01 40 80 120 200 160 240 280 160 100 120 140 IGBT DC IC (A) VCE (V) 1 10 100 1000 10 000 0.01 0.1 93196_02 1000 100 IC (A) VCE (V) 93196_03 300 100 200 275 175 250 150 225 125 TJ = 150 °C TJ = 125 °C TJ = 25 °C Allowable Case Temperature (°C) IF - Continuous Forward Current (A) 402010 30 50 600 100 160 180 140 120 93196_04 Diode DC

Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 93196 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10 Fig. 5 - Typical Diode Forward Characteristics Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Fig. 7 - Typical IGBT Threshold Voltage Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 720 V, Rg = 5 , VGE = 15 V Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 720 V, Rg = 5 , VGE = 15 V IF (A) VFM (V) 07 123456 93196_05 200 100 175 150 125 TJ = 25 °C TJ = 125 °C TJ = 150 °C ICES (mA) VCES (V) 100 1300300 500 700 900 1100 0.00001 93196_06 0.1 0.01 0.001 0.0001 TJ = 25 °C TJ = 125 °C TJ = 150 °C Vgeth (V) IC (mA) 08 1 246 357 3.0 3.5 4.0 4.5 5.0 5.5 93196_07 6.0 TJ = 25 °C TJ = 125 °C VCE (V) TJ (°C) 20 16040 80 12060 100 140 1.00 1.50 2.00 93196_08 2.75 1.25 1.75 2.25 2.50 100 A 150 A 50 A 27 A Energy (mJ) IC (A) 20 30 50 90 7040 60 100 80 110 93196_09 Eon Eoff Switching Time (ns) IC (A) 20 30 50 70 90 60 80 10040 110 93196_10 1000 100 td(off) td(on) tf tr

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Vishay Semiconductors Document Number: 93196 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 720 V, VGE = 15 V Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 720 V, IC = 100 A, VGE = 15 V Fig. 13 - Typical trr Diode vs. dIF/dt Vrr = 400 V, IF = 50 A Fig. 14 - Typical Irr Diode vs. dIF/dt Vrr = 400 V, IF = 50 A Fig. 15 - Typical Qrr Diode vs. dIF/dt Vrr = 400 V, IF = 50 A Energy (mJ) Rg (Ω) 01 0 2 0 4 0 30 50 93196_11 Eon Eoff Switching Time (ns) Rg (Ω) 01 0 3 0 4 0 20 50 93196_12 10 000 1000 100 td(off) td(on) tf tr trr (ns) dIF/dt (A/μs) 100 93196_13 1000 310 150 190 270 130 110 170 230 290 250 210 TJ = 125 °C TJ = 25 °C Irr (A) dIF/dt (A/μs) 100 93196_14 1000 TJ = 25 °C TJ = 125 °C Qrr (nC) dIF/dt (A/μs) 100 1000 93196_15 3000 1000 1500 2500 2000 500 TJ = 125 °C TJ = 25 °C

Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 93196 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10 Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode) 0.001 0.01 0.1 0.00001 93196_16 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) ZthJC - Thermal Impedance Junction to Case (°C/W) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.001 0.01 0.1 0.00001 93196_17 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) ZthJC - Thermal Impedance Junction to Case (°C/W) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC

Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Vishay Semiconductors Document Number: 93196 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 22-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 7 Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit Fig. 19a - Switching Loss Test Circuit Fig. 19b - Switching Loss Waveforms Test Circuit * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id 50 V 1000 V D.U.T.L VC * Rg VCCD.U.T. R = VCC ICM L Diode clamp/ D.U.T. D.U.T./ driver - 5 V Rg VCC t = 5 µstd(on) tftr 90 % td(off) 10 % 90 % 10 % 5 % VC IC Eon Eoff Ets = (Eon + Eoff)

Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 93196 8 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 22-Jul-10 ORDERING INFORMATION TABLE CIRCUIT CONFIGURATION 1 - Insulated Gate Bipolar Transistor (IGBT) 2 - T = Trench IGBT technology 3 - Current rating (100 = 100 A) 4 - Circuit configuration (D = Single switch with antiparallel diode) 6 - Voltage rating (120 = 1200 V) 7 - Speed/type (U = Ultrafast) Device code 513 24 67 G T 100 D A 120 U 3 (C) 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037

Document Number: 95036 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 28-Aug-07 1 SOT-227 Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters (inches) Notes

  • Dimensioning and toleranc ing per ANSI Y14.5M-1982
  • Controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -A- 12.50 (0.492) 7.50 (0.295) Ø 4.40 (0.173) Ø 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 25.20 (0.992) -B- R full Chamfer 2.00 (0.079) x 45° 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303)4 x 2.10 (0.082) 1.90 (0.075) -C- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) MM M0.25 (0.010) CA B 4 x M4 nuts

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