Overview
GS-065-011-2-L is listed in the IC category. Available datasheets include documents from GaN Systems Inc..
Summary
650 V E-mode GaN transistor Rev 220712
Description
The GS-065-011-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.