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GS-065-008-1-L integrated circuit reference

IC

GS-065-008-1-L

GaN Systems Inc.

The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems inn…

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GaN Systems Inc. GS-065-008-1-L overview.

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GS-065-008-1-L is listed in the IC category. Available datasheets include documents from GaN Systems Inc..

Summary

650 V E-mode GaN transistor Rev 220712

Description

The GS-065-008-1-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-008-1-L is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

Source title GS-065-008-1-L Datasheet(PDF) - GaN Systems Inc.

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