GP4953 GTM
Document overview
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Technical content
Features
*Low On-Resistance *Simple Drive Requirement *Fast Switching Package Dimensions A - 0.5334 c1 0.203 0.279 A1 0.381 - D 9.017 10.16 A2 2.921 4.953 E 6.096 7.112 b 0.356 0.559 E1 7.620 8.255 b1 0.356 0.508 e 2.540 BSC b2 1.143 1.778 HE - 10.92 b3 0.762 1.143 L 2.921 3.810 c 0.203 0.356 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS f20 V Continuous Drain Current3 ID @TA=25: -5 A Continuous Drain Current3 ID @TA=70: -4 A Pulsed Drain Current1 IDM -20 A Total Power Dissipation PD @TA=25: 2 W Linear Derating Factor 0.016 W/ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-amb 62.5 /W BVDSS -30V RDS(ON) 53m ID -5A Pb Free Plating Product L A SEATING PLANE eb ZZ E D c SECTION Z - Z b GAUGE PLANE DIP-8
GP4953 Page: 2/4 ISSUED DATE :2005/08/08 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - -0.1 - V/: Reference to 25:, ID=-1mA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 6 - S VDS=-10V, ID=-5A Gate-Source Leakage Current IGSS - - D100 nA VGS= D20V Drain-Source Leakage Current(Tj=25:) - - -1 uA VDS=-30V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - -25 uA VDS=-24V, VGS=0 - - 53 VGS=-10V, ID=-5A Static Drain-Source On-Resistance2 RDS(ON) - - 90 mŁ VGS=-4.5V, ID=-4A Total Gate Charge2 Qg - 9 15 Gate-Source Charge Qgs - 2 - Gate-Drain (“Miller”) Change Qgd - 5 - nC ID=-5A VDS=-15V VGS=-4.5V Turn-on Delay Time2 Td(on) - 10 - Rise Time Tr - 9 - Turn-off Delay Time Td(off) - 20 - Fall Time Tf - 25 - ns VDS=-15V ID=-1A VGS=-10V RG=6Ł RD=15Ł Input Capacitance Ciss - 500 800 Output Capacitance Coss - 217 - Reverse Transfer Capacitance Crss - 153 - pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-1.7A, VGS=0V Reverse Recovery Time2 Trr - 21.5 - ns Reverse Recovery Charge Qrr - 18 - nC IS=-5A, VGS=0V dI/dt=100A/s Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2% . 3. Mounted on 1 in2 copper pad of FR4 board; 90 /W when mounted on Min. copper pad.:
GP4953 Page: 3/4 ISSUED DATE :2005/08/08 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode
GP4953 Page: 4/4 ISSUED DATE :2005/08/08 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform