GP4501 GTM

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Technical content

Features

*Simple Drive Requirement *Lower On-resistance *Fast Switching Package Dimensions A - 0.5334 c1 0.203 0.279 A1 0.381 - D 9.017 10.16 A2 2.921 4.953 E 6.096 7.112 b 0.356 0.559 E1 7.620 8.255 b1 0.356 0.508 e 2.540 BSC b2 1.143 1.778 HE - 10.92 b3 0.762 1.143 L 2.921 3.810 c 0.203 0.356 Absolute Maximum Ratings Ratings Parameter Symbol N-channel P-channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±16 V Continuous Drain Current3 ID @TA=25: 7 -5.3 A Continuous Drain Current3 ID @TA=70: 5.8 -4.7 A Pulsed Drain Current1 IDM 20 -20 A Total Power Dissipation PD @TA=25: 2.0 W Linear Derating Factor 0.016 W/: Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 62.5 /:W Pb Free Plating Product N-CH BVDSS 30V N-CH RDS(ON) 28m N-CH ID 7A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A L A SEATING PLANE eb ZZ E D c SECTION Z - Z b GAUGE PLANE DIP-8

GP4501 Page: 2/9 ISSUED DATE :2006/12/06 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25 ::::unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.02 - V/: Reference to 25 , I:D=1mA Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 13 - S VDS=10V, ID=7A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current(Tj=25 ) : - - 1 uA VDS=30V, VGS=0 Drain-Source Leakage Current(Tj=70 ): IDSS - - 25 uA VDS=24V, VGS=0 - - 28 VGS=10V, ID=7A Static Drain-Source On-Resistance2 RDS(ON) - - 42 m VGS=4.5V, ID=5A Total Gate Charge2 Qg - 8.4 - Gate-Source Charge Qgs - 2.1 - Gate-Drain (“Miller”) Change Qgd - 4.7 - nC ID=7A VDS=24V VGS=4.5V Turn-on Delay Time2 Td(on) - 6 - Rise Time Tr - 5.2 - Turn-off Delay Time Td(off) - 18.8 - Fall Time Tf - 4.4 - ns VDS=15V ID=1A VGS=10V RG=3.3 RD=15 Input Capacitance Ciss - 645 - Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss - 95 - pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.2 V IS=7A, VGS=0V, Tj=25: Continuous Source Current (Body Diode) IS - - 1.67 A VD=VG=0V, VS=1.2V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Mounted on 1 in2 copper pad of FR4 board; 90:/W when mounted on Min. copper pad.

GP4501 Page: 3/9 ISSUED DATE :2006/12/06 REVISED DATE : P-Channel Electrical Characteristics (Tj = 25 ::::unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - -0.028 - V/: Reference to 25 , I:D=-1mA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA Forward Transconductance gfs - 8.5 - S VDS=-10V, ID=-5.3A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±16V Drain-Source Leakage Current(Tj=25 ) : - - -1 uA VDS=-30V, VGS=0 Drain-Source Leakage Current(Tj=70 ): IDSS - - -25 uA VDS=-24V, VGS=0 - - 50 VGS=-10V, ID=-5.3A Static Drain-Source On-Resistance2 RDS(ON) - - 90 m VGS=-4.5V, ID=-4.2A Total Gate Charge2 Qg - 20 - Gate-Source Charge Qgs - 3.5 - Gate-Drain (“Miller”) Change Qgd - 2 - nC ID=-5.3A VDS=-15V VGS=-10V Turn-on Delay Time2 Td(on) - 12 - Rise Time Tr - 20 - Turn-off Delay Time Td(off) - 45 - Fall Time Tf - 27 - ns VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 Input Capacitance Ciss - 790 - Output Capacitance Coss - 440 - Reverse Transfer Capacitance Crss - 120 - pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - -1.2 V IS=-2.6A, VGS=0V, Tj=25: Continuous Source Current (Body Diode) IS - - -1.67 A VD=VG=0V, VS=-1.2V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Mounted on 1 in2 copper pad of FR4 board; 90:/W when mounted on Min. copper pad.

GP4501 Page: 4/9 ISSUED DATE :2006/12/06 REVISED DATE : Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation

GP4501 Page: 5/9 ISSUED DATE :2006/12/06 REVISED DATE : N-Channel Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature 90::::/W

GP4501 Page: 6/9 ISSUED DATE :2006/12/06 REVISED DATE : N-Channel Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

GP4501 Page: 7/9 ISSUED DATE :2006/12/06 REVISED DATE : P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation

GP4501 Page: 8/9 ISSUED DATE :2006/12/06 REVISED DATE : P-Channel Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature 90::::/W

GP4501 Page: 9/9 ISSUED DATE :2006/12/06 REVISED DATE : P-Channel Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform