GMBD4148 GTM
Document overview
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Technical content
TPU.34)QBDLBHF* GGMM BB DD 44 11 44 88
Description
The GMBD4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in plastic surface mount package. Package Dimensions Style : Pin 1.Anode 2.NC 3.Cathode A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -65~+150 Continuous Reverse Voltage VR 70 V Continuous Forward Current IF 200 mA Peak Forward Surge Current IFSM 500 mA Characteristics at Ta = 25 :::: Characteristic Symbol Min. Max. Unit Test Conditions Forward Voltage VF - 1 V IF=10mA Reverse Breakdown VR 100 - V IR=100uA Reverse Current IR - 5 uA VR=75V Total Capacitance CT - 4 pF VR=0V,F=1MHz Reverse Recovery Time Trr - 4 nS IF=IR=10mA, RL=100 Measured at IR=1mA Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165