GM9452 GTM
Document overview
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Technical content
Features
*Simple Drive Requirement *Low Gate Charge *Capable of 2.5V Gate Drive Package Dimensions A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5q TYP. M 0.70 REF. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS f16 V Continuous Drain Current3, VGS@4.5V ID @TA=25: 4 A Continuous Drain Current3, VGS@4.5V ID @TA=70: 2.5 A Pulsed Drain Current1 IDM 12 A Total Power Dissipation PD @TA=25: 1.25 W Linear Derating Factor 0.01 W/ Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 100 /W BVDSS 20V RDS(ON) 50m ID 4A Pb Free Plating Product SOT-89
GM9452 Page: 2/4 ISSUED DATE :2005/09/14 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient æBVDSS /æTj - 0.03 - V/: Reference to 25:, ID=1mA Gate Threshold Voltage VGS(th) 0.7 - 1.5 V VDS=VGS, ID=250uA Forward Transconductance2 gfs - 10 - S VDS=5V, ID=3A Gate-Source Leakage Current IGSS - - D100 nA VGS= D16V Drain-Source Leakage Current(Tj=25:) - - 1 uA VDS=20V, VGS=0 Drain-Source Leakage Current(Tj=70:) IDSS - - 25 uA VDS=16V, VGS=0 - - 38 VGS=10V, ID=4A Static Drain-Source On-Resistance2 RDS(ON) - - 50 mŁ VGS=4.5V, ID=4A Total Gate Charge2 Qg - 6 10 Gate-Source Charge Qgs - 1 - Gate-Drain (“Miller”) Change Qgd - 2 - nc ID=4A VDS=16V VGS=4.5V Turn-on Delay Time2 Td(on) - 8 - Rise Time Tr - 9 - Turn-off Delay Time Td(off) - 13 - Fall Time Tf - 3 - ns VDS=10V ID=1A VGS=5V RG=3.3Ł RD=10Ł Input Capacitance Ciss - 360 570 Output Capacitance Coss - 80 - Reverse Transfer Capacitance Crss - 65 - pF VGS=0V VDS=20V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.3 V IS=1A, VGS=0V Reverse Recovery Time2 Trr - 18 - ns Reverse Recovery Charge Qrr - 10 - nC IS=4A, VGS=0V dI/dt=100A/s Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec .
GM9452 Page: 3/4 ISSUED DATE :2005/09/14 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode
GM9452 Page: 4/4 ISSUED DATE :2005/09/14 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform