GM3055 GTM
Document overview
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Technical content
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Description
The SOT-89 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Package Dimensions A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5q TYP. M 0.70 REF. Absolute Maximum Ratings at Ta = 25:::: Parameter Symbol Ratings Unit Operating Junction Temperature Range Tj -55 ~+150 Storage Temperature Range Tstg -55 ~ +150 Drain - Source Voltage VDS 30 V Gate - Source Voltage VGS ±20 V Continuous Drain Current ,VGS@10V ID@TC=25 15 A Continuous Drain Current ,VGS@10V ID@TC=100 9 A Pulsed Drain Current IDM 50 A Total Power Dissipation PD@TC=25 15 W Thermal Data Symbol parameter Value Unit Rthj-case Thermal Resistance junction-case Max. 3 /W Rthj-amb Thermal Resistance junction-ambient Max. 42 /W Source – Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units Is Continuous source Current (Body Diode) VD=VG=0V, VS=1.3V - - 15 A ISM Pulsed Source Current(Body Diode) - - 50 A VsD Forward On Voltage 2 Tj=25,Is=15A,VGS=0V - - 1.3 V SOT-89
Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. Electrical Characteristics @Tj = 25::::(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDss Drain – Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.037 - V/ RDS(ON) Static Drain-Source On-Resistance VGS=10V,ID=8A - - 80 m VGS=4.5V,ID=6A - - 100 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V Drain-Source Leakage Current(Tj=25) VDS=30V,VGS=0V - - 25 uA IDSS Drain-Source Leakage Current(Tj=150) VDS=24V,VGS=0V - - 250 uA IGSS Gate-Source Leakage VGS=±20V - - ±100 nA Qg Total Gate Charge ID=8A - 5.4 - nC Qgs Gate-Source Charge VDS=24V - 1.3 - nC Qgd Gate-Drain (“Miller)Charge VGS=5V - 3.6 - nC td(on) Turn-on Delay Time VDS=15V - 3.6 - nS tr Rise Time ID=8A - 19.8 - nS td(off) Turn-off Delay Time RG=3.4,VGS=10V - 13 - nS tf Fall Time RD=1.9 - 3.2 - nS Ciss Input Capacitance VGS=0V - 260 - pf Coss Output Capacitance VDS=25V - 144 - pf Crss Reverse Transfer Capacitance f=1.0MHZ - 13 - pf
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