GE200NB60S

STMicroelectronics

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.…

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Selected specification: STMicroelectronics

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STMicroelectronics GE200NB60S overview.

Summary

N-CHANNEL 150A - 600V - ISOTOP PowerMESH™ IGBT 03-Nov-2006

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).

Source title GE200NB60S Datasheet(PDF) - STMicroelectronics

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