GC10MPS12-252 ISC

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 3

Technical content

SiliconCarbideSchottkyDiode www.iscsemi.com

FEATURES

  • HighAvalanche (UIS) Capability
  • LowThermal Resistance
  • ExtremelyFastSwitching Speeds

APPLICATIONS

  • BoostDiode in Power FactorCorrection (PFC)
  • MotorDrives
  • Uninterruptible Power Supply (UPS)
  • Switched Mode PowerSupply (SMPS) ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRSM RepetitivePeakReverseVoltage SurgePeakReverseVoltage 1200 V IF ContinuousForwardCurrent TC =25°C,D=1 49 A TC =135°C,D=1 24 A TC =165°C,D=1 10 A IFSM Non-RepetitiveForwardSurge Current Tc=25°C,tP=10ms,HalfSineWave 80 A Tc=150°C,tP=10ms,HalfSineWave 64 A IFRM RepetitivePeakForwardSurge Current Tc=25°C,Tp=10ms,HalfSineWave 48 A Tc=150°C,Tp=10ms,HalfSineWave 34 A IFM Non-repetitivepeakforwardcurrent Tc=25°C,Tp=10us 400 A I2T I2tValue Tc=25°C,Tp=10ms 32 A2S dV/dt DiodeRuggedness VR =0~960V 200 V/ns Ptot PowerDissipation Tc=25°C 300 W TJ JunctionTemperature -55~175 ℃ Tstg StorageTemperatureRange -55~175 ℃

SiliconCarbideSchottkyDiode www.iscsemi.com THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.5 ℃/W ELECTRICALCHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF DiodeForwardVoltage V IR Reversecurrent uA QC TotalCapacitiveCharge VR=400V, di/dt=200A/μs, IF≤ IFM -- 19 -- nC C TotalCapacitance VR=1V,TJ =25°C,f=1MHz -- 616 -- pF VR=800V,TJ =25°C,f=1MHz -- 40 -- PACKAGEOUTLINE(UNIT:mm):

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