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Nov 2013 http://www.genesicsemi.com/index.php/sic-products/schottky Pg1 of 4 PIN 1 PIN 2 CASE Silicon Carbide Power Schottky Diode Features Package 1200 V Schottky rectifier 175 °C maximum operating temperature Temperature independent switching behavior Superior surge current capability Positive temperature coefficient of V F Extremely fast switching speeds Superior figure of merit Q C/IF RoHS Compliant TO – 252 Advantages Applications Improved circuit efficienc y (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Low reverse leakage current at operating temperature Power Factor Correction (PFC) Switched-Mode Power Supply (SMPS) Solar Inverters Wind Turbine Inverters Motor Drives Induction Heating Uninterruptible Power Supply (UPS) High Voltage Multipliers Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V RRM 1200 V Continuous forward current I F TC ≤ 160 °C 2 A RMS forward current I F(RMS) TC ≤ 160 °C 3 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tP = 10 ms 18 A TC = 160 °C, tP = 10 ms 15 Non-repetitive peak forward current I F,max TC = 25 °C, tP = 10 µs 100 A I t value ∫i 2 dt TC = 25 °C, tP = 10 ms 1.6 A s TC = 160 °C, tP = 10 ms 1.1 Power dissipation P tot TC = 25 °C 65 W Operating and storage temperature T j , Tstg -55 to 175 °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Diode forward voltage V F IF = 2 A, Tj = 25 °C 1.5 1.8 V IF = 2 A, Tj = 175 °C 2.6 3.0 Reverse current I R VR = 1200 V, Tj = 25 °C 5 50 µA VR = 1200 V, Tj = 175 °C 10 100 Total capacitive charge Q C IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C VR = 400 V 9 nC VR = 960 V 14 Switching time t s VR = 400 V < 17 ns VR = 960 V Total capacitance C VR = 1 V, f = 1 MHz, Tj = 25 °C 131 pF VR = 400 V, f = 1 MHz, Tj = 25 °C 12 VR = 1000 V, f = 1 MHz, Tj = 25 °C 8 Thermal Characteristics Thermal resistance, junction - case R thJC 2.3 °C/W Mechanical Properties Mounting torque M 0.6 Nm case VRRM = 1200 V VF = 1.5 V IF = 2 A QC = 14 nC
Nov 2013 http://www.genesicsemi.com/index.php/sic-products/schottky Pg3 of 4 Figure 7: Current vs Pulse Duration Curves at TC = 160 °C Figure 8: Transient Thermal Impedance Package Dimensions: TO-252 PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS 0.265 (6.73) 0.250 (6.35) 0.215 (5.46) 0.210 (5.33) 0.080 (2.03) 0.055 (1.40) 0.410 (10.42) 0.371 (9.40) 0.060 (1.52) 0.045 (1.15) 0.045 (1.14) 0.030 (0.76) 0.035 (0.88) 0.025 (0.64) 0.090 (2.285) 0.180 (4.57) 0.094 (2.38) 0.086 (2.19) 0.05 (1.27) 0.04 (1.02) 0.023 (0.58) 0.018 (0.46) SEATING PLANE 0.002 (0.05) 0.020 (0.51) min 0.023 (0.58) 0.018 (0.46) 0.12 (3.05) min 0.15 (3.81) min 0.352 (8.95)GB02SLT12-252 SH000 WWYY
Nov 2013 http://www.genesicsemi.com/index.php/sic-products/schottky Pg4 of 4
Revision History
Date Revision Comments Supersedes 2013/11/12 4 Updated Electric al Characteristics 2013/06/12 3 Updated Electric al Characteristics 2012/12/18 2 Second generation update 2012/05/22 1 Second generation release 2010/12/13 0 Initial release Published by GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage.
Nov 2013 http://www.genesicsemi.com/index.php/sic-products/schottky Pg1 of 1 SPICE Model Parameters Copy the following code into a SPICE software program for simulation of the GB02SLT12-252 device. * MODEL OF GeneSiC Semiconductor Inc. * $Revision: 1.0 $ * $Date: 04-SEP-2013 $ * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/sic-products/schottky * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * Start of GB02SLT12-252 SPICE Model .SUBCKT GB02SLT12 ANODE KATHODE D1 ANODE KATHODE GB02SLT12 D2 ANODE KATHODE GB02SLT12_PIN .MODEL GB02SLT12 D + IS 2.05E-15 RS 0.282 + TRS1 0.0054 TRS2 3E-05 + N 1 IKF 251 + EG 1.2 XTI -1.8 + CJO 1.61E-10 VJ 0.4508 + M 1.586 FC 0.5 + TT 1.00E-10 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 2 TYPE SiC_Schottky + MFG GeneSiC_Semi .MODEL GB02SLT12_PIN D + IS 1.54E-25 RS 0.39 + TRS1 -0.003 N 3.941 + EG 3.23 IKF 19 + XTI 0 FC 0.5 + TT 0 BV 1200 + IBV 1.00E-03 VPK 1200 + IAVE 10 TYPE SiC_PiN .ENDS * End of GB02SLT12-252 SPICE Model