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Dec 2012 http://www.genesicsemi.com/index.php/sic-products/schottky Pg1 of 4 PIN 1 PIN 2 CASE Silicon Carbide Power Schottky Diode Features Package  1200 V Schottky rectifier  175 °C maximum operating temperature  Temperature independent switching behavior  Superior surge current capability  Positive temperature coefficient of V F  Extremely fast switching speeds  Superior figure of merit Q C/IF  RoHS Compliant TO – 252 Advantages Applications  Improved circuit efficienc y (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Low reverse recovery current  Low device capacitance  Low reverse leakage current at operating temperature  Power Factor Correction (PFC)  Switched-Mode Power Supply (SMPS)  Solar Inverters  Wind Turbine Inverters  Motor Drives  Induction Heating  Uninterruptible Power Supply (UPS)  High Voltage Multipliers Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V RRM 1200 V Continuous forward current I F TC ≤ 160 °C 1 A RMS forward current I F(RMS) TC ≤ 160 °C 2 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tP = 10 ms 10 A TC = 160 °C, tP = 10 ms 8 Non-repetitive peak forward current I F,max TC = 25 °C, tP = 10 µs 65 A I t value ∫i 2 dt TC = 25 °C, tP = 10 ms 0.5 A s TC = 160 °C, tP = 10 ms 0.3 Power dissipation P tot TC = 25 °C 42 W Operating and storage temperature T j , Tstg -55 to 175 °C Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Diode forward voltage V F IF = 1 A, Tj = 25 °C 1.7 2.0 V IF = 1 A, Tj = 175 °C 2.6 3.0 Reverse current I R VR = 1200 V, Tj = 25 °C < 1 2 µA VR = 1200 V, Tj = 175 °C 2 20 Total capacitive charge Q C IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C VR = 400 V 7 nC VR = 960 V 13 Switching time t s VR = 400 V < 17 ns VR = 960 V Total capacitance C VR = 1 V, f = 1 MHz, Tj = 25 °C 69 pF VR = 400 V, f = 1 MHz, Tj = 25 °C 10 VR = 1000 V, f = 1 MHz, Tj = 25 °C 8 Thermal Characteristics Thermal resistance, junction - case R thJC 3.6 °C/W Mechanical Properties Mounting torque M 0.6 Nm VRRM = 1200 V IF = 1 A QC = 13 nC

Dec 2012 http://www.genesicsemi.com/index.php/sic-products/schottky Pg3 of 4 Characteristics Characteristics Figure 7: Current vs Pulse Duration Curves at TC = 160 °C Figure 8: Transient Thermal Impedance Package Dimensions: TO-252 PACKAGE OUTLINE NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS 3. CONTROLLED LEAD COPLANARITY <D> 0.004 INCH MAXIMUM

Dec 2012 http://www.genesicsemi.com/index.php/sic-products/schottky Pg4 of 4

Revision History

Date Revision Comments Supersedes 2012/12/18 2 Second generation update 2012/05/22 1 Second generation release 2010/12/13 0 Initial release Published by GeneSiC Semiconductor, Inc.

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