G2SB20_V02 VISHAY

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content

G2SB20, G2SB60, G2SB80 www.vishay.com Vishay General Semiconductor End of Life - October 2021 - Alternative Device: GBLA Series Revision: 05-May-2021 1 Document Number: 88603 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Glass Passivated Single-Phase Bridge Rectifier LINKS TO ADDITIONAL RESOURCES

FEATURES

  • UL recognition file number E54214
  • Ideal for printed circuit boards
  • High surge current capability
  • Typical I R less than 0.1 μA
  • High case dielectric strength
  • Solder dip 275 °C max. 10 s, per JESD 22-B106
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for monitor, TV, printer, SM PS, adapter, audio equipment, and home appliances application. MECHANICAL DATA Case: GBL Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked on body PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V, 600 V, 800 V IFSM 80 A IR 5 μA VF at IF = 0.75 V 1.0 V TJ max. 150 °C Package GBL Circuit configuration In-line Case Type GBL ~ ~ 333DDD3 D 3D Models MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL G2SB20 G2SB60 G2SB80 UNIT Maximum repetitive peak reverse voltage V RRM 200 600 800 V Maximum RMS voltage V RMS 140 420 560 V Maximum DC blocking voltage V DC 200 600 800 V Maximum average forward rectified output current at TA = 25 °C IF(AV) 1.5 A Peak forward surge current single sine-wave superimposed on rated load I FSM 80 A Rating for fusing (t < 8.3 ms) I 2t2 7 A 2s Operating junction and storage temperature range T J, TSTG -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SY MBOL G2SB20 G2SB60 G2SB80 UNIT Maximum instantaneous forward voltage drop per diode 0.75 A V F 1.00 V Maximum DC reverse current at rated DC blocking voltage per diode T A = 25 °C IR 5.0 μATA = 125 °C 300

G2SB20, G2SB60, G2SB80 www.vishay.com Vishay General Semiconductor End of Life - October 2021 - Alternative Device: GBLA Series Revision: 05-May-2021 2 Document Number: 88603 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note

  • Unit mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Derating Curve Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 3 - Typical Forward Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL G2SB20 G2SB60 G2SB80 UNIT Typical thermal resistance R θJA 40 °C/WRθJC 12 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g ) PREFERRED PACKAGE CODE BA SE QUANTITY DELIVERY MODE G2SB60-E3/45 2.045 45 20 Tube G2SB60-E3/51 2.045 51 400 Anti-static PVC tray 0.5 1.0 1.5 2.0 7550250 100 125 150 Temperature (°C) Average Forward Output (IF(AV)) PCB Mounting, TA 100 1 100 Number of Cycles at 60 Hz Peak For ward S urge C urrent (A)

1.0 Cycle

0.01 0.1 100 Instantaneous Forward Voltage (V) Instantaneo us For ward C urrent (A) 0.01 0.1 100 806040200 100 Percent of Rated Peak Reverse Voltage (%) Instantaneo us Re verse C urrent (µA) TA = 125 °C TA = 25 °C

G2SB20, G2SB60, G2SB80 www.vishay.com Vishay General Semiconductor End of Life - October 2021 - Alternative Device: GBLA Series Revision: 05-May-2021 3 Document Number: 88603 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 100 0.1 10 1 100 Reverse Voltage (V) Junction Capaci tance (pF) 0.01 0.1 100 0.01 0.1 10 1 100 t - Heating Time (s) Transient Thermal Impedance (°C/W) Case Type GBL 0.125 (3.17) x 45° Chamfer 0.825 (20.9) 0.815 (20.7) 0.421 (10.7) 0.411 (10.4) 0.718 (18.2) 0.682 (17.3) 0.098 (2.5) 0.075 (1.9) Lead Depth 0.022 (0.56) 0.018 (0.46) 0.210 (5.3) 0.190 (4.8) 0.040 (1.02) 0.018 (0.46) 0.050 (1.27) 0.040 (1.02) 0.098 (2.5) 0.075 (1.9) 0.095 (2.41) 0.080 (2.03) 0.080 (2.03) 0.060 (1.50) Polarity shown on front side of case, positive lead beveled corner

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