G2N7002 GTM
Document overview
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Technical content
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Description
N-channel enhancement-mode MOS TRANSISTOR Package Dimensions A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 - E 0 0.10 L 0.85 1.15 F 0.45 0.55 M 0C 10C Absolute Maximum Ratings at Ta = 25:::: Parameter Symbol Ratings Unit Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Drain-Source Voltage 60 V VGS f20 V Gate-Source Voltage - Continuous - Non-repetitive (tp 50us) VGSM f40 V Ta=25(1) 115 Continuous Drain Current Ta=100(1) ID mA Pulsed Drain Current (Ta=25 ) (2) IDM 800 mA Ta=25 0.2 Power Dissipation Ta=100 PD 0.08 W Thermal Resistance ,Junction-to-Ambient RthJA 625 /W Characteristics at Ta = 25:::: Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 60 - - V VGS=0, ID=10uA Gate Threshold Voltage VGS(th) 1 - 2.5 V VDS=2.5V, ID=0.25mA Gate Body Leakage Current IGSS - - D100 nA VGS=f20V, VDS=0 Zero Gate Voltage Drain Current Idss - - 1 uA VDS=60V, VGS=0 On-State Drain Current ID(ON) 500 - - mA VDS =7.5V ,VGS=10V - - 7.5 25 - - 13.5 Id=50mA, VGS=5V 125 - - 7.5 25 Static Drain-Source on-State Resistance RDS(ON) - - 13.5 Ł Id=500mA, VGS=10V 125 Forward Transconductance GFS 80 - - mS VDS>2 VDS(ON), ID=200mA Input Capacitance Ciss - - 50 pF Output Capacitance Coss - - 25 pF Reverse Transfer Capacitance Crss - - 5 pF VDS=25V, VGS=0V, f=1MHz
(1)The Power Dissipation of the package may result in a continuous train current. (2)Pulse Width 300us, Duty cycle 2%. Characteristics Curve
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