G06P01E integrated circuit reference

IC

G06P01E

Goford Semiconductor

The G06P01E uses advanced trench technology to provide

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Goford Semiconductor
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Manufacturer Specifications

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Goford Semiconductor G06P01E overview.

Summary

P-Channel Enhancement Mode Power MOSFET

Description

The G06P01E uses advanced trench technology to provide

Source title G06P01E Datasheet(PDF) - Goford Semiconductor