FX20KMJ-2 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscP-ChannelMOSFETTransistor FX20KMJ-2
- FEATURES
- WithTO-220Fpackage
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- Load switch
- Powermanagement
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage -100 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous -20 A IDM DrainCurrent-SinglePulsed -80 A PD TotalDissipation@TC=25℃ 25 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 5.0 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscP-ChannelMOSFETTransistor FX20KMJ-2 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=-1mA -100 V VGS(th) GateThresholdVoltage VDS=-10V;ID=-1mA -1.0 -2.0 V RDS(on) Drain-SourceOn-Resistance VGS=-10V;ID=-10A 0.20 0.26 Ω IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakage Current VDS=-100V;VGS=0V -0.1 μA VSDF Diodeforwardvoltage ISD=-10A,VGS =0V -1.5 V