FX004

TPS51216 TI

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www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 CompleteDDR2,DDR3andDDR3LMemoryPowerSolutionSynchronousBuck Controller,2-ALDO,BufferedReference Check forSamples: TPS51216 1FEATURES DESCRIPTION The TPS51216 providesa completepower supplyfor 2• Synchronous Buck Controller(VDDQ) DDR2, DDR3 and DDR3L memory systems in the– Conversion VoltageRange: 3 V to28 V lowesttotalcostand minimum space.Itintegratesa – Output VoltageRange: 0.7V to1.8V synchronousbuck regulatorcontroller(VDDQ) witha 2-A sink/sourcetrackingLDO (VTT)and bufferedlow– 0.8% VREF Accuracy noisereference(VTTREF). The TPS51216 employs– D-CAP ™ Mode forFastTransientResponse D-CAP ™ mode coupled with 300 kHz/400 kHz – Selectable300 kHz/400kHz Switching frequenciesfor ease-of-use and fast transient Frequencies response. The VTTREF tracks VDDQ/2 within excellent0.8% accuracy.The VTT, whichprovides2-– OptimizedEfficiencyatLightand Heavy A sink/sourcepeak currentcapabilities,requiresonlyLoads withAuto-skipFunction 10-μF of ceramic capacitance.In addition,a– Supports Soft-OffinS4/S5 States dedicatedLDO supplyinputisavailable. – OCL/OVP/UVP/UVLO Protections The TPS51216 providesrichusefulfunctionsas well– Powergood Output as excellentpower supplyperformance.Itsupports

• 2-A LDO(VTT), BufferedReference(VTTREF) flexiblepower statecontrol,placingVTT athigh-Zin S3 and dischargingVDDQ, VTT and VTTREF (soft-– 2-A (Peak)Sink and Source Current off)inS4/S5 state.Programmable OCL withlow-side– RequiresOnly 10-μF ofCeramic Output MOSFET R DS(on) sensing, OVP/UVP/UVLO andCapacitance thermalshutdownprotectionsarealsoavailable. – Buffered,Low Noise,10-mA VTTREF The TPS51216 isavailablein a 20-pin,3 mm × 3Output mm, QFN package and is specifiedfor ambient – 0.8% VTTREF, 20-mV VTT Accuracy temperaturefrom–40°C to85°C. – Support High-ZinS3 and Soft-OffinS4/S5
• Thermal Shutdown
• 20-Pin,3 mm × 3 mm, QFN Package

APPLICATIONS

• DDR2/DDR3/DDR3L Memory Power Supplies
• SSTL_18, SSTL_15, SSTL_135 and HSTL Termination Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2D-CAP isa trademarkofTexas Instruments. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2010–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. ORDERING INFORMATION (1) ORDERABLE DEVICE OUTPUT MINIMUMTA PACKAGE PINSNUMBER SUPPLY QUANTITY TPS51216RUKR Tape and reel 3000 –40°C to85°C PlasticQuad FlatPack (20pinQFN) 20 TPS51216RUKT Minireel 250 (1) Forthemost currentpackage and orderinginformationsee thePackage OptionAddendum attheend ofthisdocument,orsee theTI web siteatwww.ti.com. ABSOLUTE MAXIMUM RATINGS (1) overoperatingfree-airtemperaturerange(unlessotherwisenoted) VALUE UNIT MIN MAX VBST –0.3 36 VBST (3) –0.3 6 SW –5 30 Inputvoltagerange(2) VLDOIN, VDDQSNS, REFIN –0.3 3.6 V VTTSNS –0.3 3.6 PGND, VTTGND –0.3 0.3 V5IN,S3,S5,TRIP,MODE –0.3 6 DRVH –5 36 DRVH (3) –0.3 6 DRVH (3)(dutycycle< 1%) –2.5 6 VTTREF, VREF –0.3 3.6 Outputvoltagerange(2) V VTT –0.3 3.6 DRVL –0.3 6 DRVL (dutycycle< 1%) –2.5 6 PGOOD –0.3 6 Junctiontemperaturerange,TJ 125 °C Storagetemperaturerange,TSTG –55 150 °C (1) Stressesbeyond thoselistedunderabsolutemaximum ratingsmay cause permanentdamage tothedevice.These arestressratings onlyand functionaloperationofthedeviceattheseorany otherconditionsbeyond thoseindicatedunderrecommended operating conditionsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmay affectdevicereliability. (2) Allvoltagevaluesarewithrespecttothenetworkgroundterminalunlessotherwisenoted. (3) VoltagevaluesarewithrespecttotheSW terminal. THERMAL INFORMATION TPS51216 THERMAL METRIC UNITS QFN (20)PINS θJA Junction-to-ambientthermalresistance 94.1 θJCtop Junction-to-case(top)thermalresistance 58.1 θJB Junction-to-boardthermalresistance 64.3 °C/W ψJT Junction-to-topcharacterizationparameter 31.8 ψJB Junction-to-boardcharacterizationparameter 58.0 θJCbot Junction-to-case(bottom)thermalresistance 5.9

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www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 RECOMMENDED OPERATING CONDITIONS MIN TYP MAX UNIT Supplyvoltage V5IN 4.5 5.5 V VBST –0.1 33.5 VBST (1) –0.1 5.5 SW -3 28 SW (2) –4.5 28 Inputvoltagerange V VLDOIN, VDDQSNS, REFIN –0.1 3.5 VTTSNS –0.1 3.5 PGND, VTTGND –0.1 0.1 S3,S5,TRIP,MODE –0.1 5.5 DRVH –3 33.5 DRVH (1) –0.1 5.5 DRVH (2) –4.5 33.5 Outputvoltagerange VTTREF, VREF –0.1 3.5 V VTT –0.1 3.5 DRVL –0.1 5.5 PGOOD –0.1 5.5 TA Operatingfree-airtemperature –40 85 °C (1) VoltagevaluesarewithrespecttotheSW terminal. (2) Thisvoltageshouldbe appliedforlessthan30% oftherepetitiveperiod. Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com

ELECTRICAL CHARACTERISTICS

overoperatingfree-airtemperaturerange,VV5IN=5V, VLDOIN isconnectedtoVDDQ output,VMODE =0V, VS3=VS5=5V (unless otherwisenoted) PARAMETER TEST CONDITION MIN TYP MAX UNIT SUPPLY CURRENT IV5IN(S0) V5IN supplycurrent,inS0 TA = 25°C, No load,VS3 = VS5 = 5 V 590 μA IV5IN(S3) V5IN supplycurrent,inS3 TA = 25°C, No load,VS3 = 0 V,VS5 = 5 V 500 μA IV5INSDN V5IN shutdowncurrent TA = 25°C, No load,VS3 = VS5 = 0 V 1 μA IVLDOIN(S0) VLDOIN supplycurrent,inS0 TA = 25°C, No load,VS3 = VS5 = 5 V 5 μA IVLDOIN(S3) VLDOIN supplycurrent,inS3 TA = 25°C, No load,VS3 = 0 V,VS5 = 5 V 5 μA IVLDOINSDN VLDOIN shutdowncurrent TA = 25°C, No load,VS3 = VS5 = 0 V 5 μA VREF OUTPUT IVREF = 30 μA,TA = 25°C 1.8000 VVREF Outputvoltage 0 μA ≤ IVREF <300 μA,TA = –10°C to85°C 1.7856 1.8144 V 0 μA ≤ IVREF <300 μA,TA = –40°C to85°C 1.7820 1.8180 IVREFOCL Currentlimit VVREF = 1.7V 0.4 0.8 mA VTTREF OUTPUT VVTTREF Outputvoltage VVDDQSNS /2 V |IVTTREF |<100 μA,1.2V ≤ VVDDQSNS ≤ 1.8V 49.2% 50.8% VVTTREF OutputvoltagetolerancetoVVDDQ |IVTTREF |<10 mA, 1.2V ≤ VVDDQSNS ≤ 1.8V 49% 51% IVTTREFOCLSRC Sourcecurrentlimit VVDDQSNS = 1.8V,VVTTREF = 0 V 10 18 mA IVTTREFOCLSNK Sinkcurrentlimit VVDDQSNS = 1.8V,VVTTREF = 1.8V 10 17 mA IVTTREFDIS VTTREF dischargecurrent TA = 25°C, VS3 = VS5 = 0 V,VVTTREF = 0.5V 0.8 1.3 mA VTT OUTPUT VVTT Outputvoltage VVTTREF V |IVTT |≤ 10 mA, 1.2V ≤ VVDDQSNS ≤ 1.8V,IVTTREF = 0 A –20 20 |IVTT |≤ 1 A,1.2≤ VVDDQSNS ≤ 1.8V,IVTTREF = 0 A –30 30 VVTTTOL OutputvoltagetolerancetoVTTREF mV |IVTT |≤ 2 A,1.4V ≤ VVDDQSNS ≤ 1.8V,IVTTREF = 0 A –40 40 |IVTT |≤ 1.5A,1.2V ≤ VVDDQSNS ≤ 1.4V,IVTTREF = 0 A –40 40 VVDDQSNS = 1.8V,VVTT = VVTTSNS = 0.7V,IVTTOCLSRC Sourcecurrentlimit 2 3IVTTREF = 0 A A IVTTOCLSNK Sinkcurrentlimit VVDDQSNS = 1.8V,VVTT = VVTTSNS = 1.1V,IVTTREF = 0 A 2 3 IVTTLK Leakage current TA = 25°C ,VS3 = 0 V,VS5 = 5 V,VVTT = VVTTREF 5 IVTTSNSBIAS VTTSNS inputbiascurrent VS3 = 5 V,VS5 = 5 V,VVTTSNS = VVTTREF –0.5 0.0 0.5 μA IVTTSNSLK VTTSNS leakagecurrent VS3 = 0 V,VS5 = 5 V,VVTTSNS = VVTTREF –1 0 1 TA = 25°C, VS3 = VS5 = 0 V,VVDDQSNS = 1.8V,IVTTDIS VTT Dischargecurrent 7.8 mAVVTT = 0.5V,IVTTREF = 0 A VDDQ OUTPUT VVDDQSNS VDDQ sense voltage VREFIN VDDQSNS regulationvoltageVVDDQSNSTOL TA = 25°C –3 3 mVtolerancetoREFIN IVDDQSNS VDDQSNS inputcurrent VVDDQSNS = 1.8V 39 μA IREFIN REFIN inputcurrent VREFIN = 1.8V –0.1 0.0 0.1 μA VS3 = VS5 = 0 V,VVDDQSNS = 0.5V,MODE pinpulledIVDDQDIS VDDQ dischargecurrent 12 mAdown toGND through47kΩ (Non-tracking) VS3 = VS5 = 0 V,VVDDQSNS = 0.5V,MODE pinpulledIVLDOINDIS VLDOIN dischargecurrent 1.2 Adown toGND through100kΩ (Non-tracking) SWITCH MODE POWER SUPPLY (SMPS) FREQUENCY VIN = 12 V,VVDDQSNS = 1.8V,R MODE = 100 kΩ 300 fSW VDDQ switchingfrequency kHz VIN = 12 V,VVDDQSNS = 1.8V,R MODE = 200 kΩ 400 tON(min) Minimum on time DRVH risingtofalling(1) 60 ns tOFF(min) Minimum offtime DRVH fallingtorising 200 320 450 (1) Ensuredby design.Not productiontested.

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www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 ELECTRICAL CHARACTERISTICS (continued) overoperatingfree-airtemperaturerange,VV5IN=5V, VLDOIN isconnectedtoVDDQ output,VMODE =0V, VS3=VS5=5V (unless otherwisenoted) PARAMETER TEST CONDITION MIN TYP MAX UNIT VDDQ MOSFET DRIVER Source,IDRVH = –50 mA 1.6 3.0 R DRVH DRVH resistance Sink,IDRVH = 50 mA 0.6 1.5 Ω Source,IDRVL = –50 mA 0.9 2.0 R DRVL DRVL resistance Sink,IDRVL = 50 mA 0.5 1.2 DRVH-offtoDRVL-on 10 tDEAD Dead time ns DRVL-offtoDRVH-on 20 INTERNAL BOOT STRAP SW VFBST ForwardVoltage VV5IN-VBST ,TA = 25°C, IF = 10 mA 0.1 0.2 V IVBSTLK VBST leakagecurrent TA = 25°C, VVBST = 33 V,VSW = 28 V 0.01 1.5 μA LOGIC THRESHOLD IMODE MODE sourcecurrent 14 15 16 μA MODE 0 580 600 620 MODE 1 829 854 879 VTHMODE MODE thresholdvoltage mV MODE 2 1202 1232 1262 MODE 3 1760 1800 1840 VIL S3/S5 low-levelvoltage 0.5 VIH S3/S5 high-levelvoltage 1.8 V VIHYST S3/S5 hysteresisvoltage 0.25 VILK S3/S5 inputleakcurrent –1 0 1 μA SOFT START Internalsoft-starttime,C VREF = 0.1μF,tSS VDDQ soft-starttime 1.1 msS5 risingtoVVDDQSNS > 0.99× VREFIN PGOOD COMPARATOR PGOOD infromhigher 106% 108% 110% PGOOD infromlower 90% 92% 94% VTHPG VDDQ PGOOD threshold PGOOD outtohigher 114% 116% 118% PGOOD outtolower 82% 84% 86% IPG PGOOD sinkcurrent VPGOOD = 0.5V 3 5.9 mA DelayforPGOOD in 0.8 1 1.2 ms tPGDLY PGOOD delaytime DelayforPGOOD out,with100 mV overdrive 330 ns tPGSSDLY PGOOD start-updelay C VREF = 0.1μF,S5 risingtoPGOOD rising 2.5 ms Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com ELECTRICAL CHARACTERISTICS (continued) overoperatingfree-airtemperaturerange,VV5IN=5V, VLDOIN isconnectedtoVDDQ output,VMODE =0V, VS3=VS5=5V (unless otherwisenoted) PARAMETER TEST CONDITION MIN TYP MAX UNIT PROTECTIONS ITRIP TRIP sourcecurrent TA = 25°C, VTRIP = 0.4V 9 10 11 μA TRIP sourcecurrenttemperatureTC ITRIP 4700 ppm/°Ccoefficient(2) VTRIP VTRIP voltagerange 0.2 3 V VTRIP = 3.0V 360 375 390 VOCL Currentlimitthreshold VTRIP = 1.6V 190 200 210 mV VTRIP = 0.2V 20 25 30 VTRIP = 3.0V –390 –375 –360 VOCLN Negativecurrentlimitthreshold VTRIP = 1.6V –210 –200 –190 mV VTRIP = 0.2V –30 –25 –20 VZC Zerocrossdetectionoffset 0 mV Wake-up 4.2 4.4 4.5 VUVLO V5IN UVLO thresholdvoltage V Shutdown 3.7 3.9 4.1 VOVP VDDQ OVP thresholdvoltage OVP detectvoltage 118% 120% 122% tOVPDLY VDDQ OVP propagationdelay With100 mV overdrive 430 ns VUVP VDDQ UVP thresholdvoltage UVP detectvoltage 66% 68% 70% tUVPDLY VDDQ UVP delay 1 ms tUVPENDLY VDDQ UVP enabledelay 1.2 ms VOOB OOB Thresholdvoltage 108% THERMAL SHUTDOWN Shutdown temperature(2) 140 TSDN Thermalshutdownthreshold °C Hysteresis(2) 10 (2) Ensuredby design.Not productiontested.

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PowerP AD™ VTTSNS VLDOIN VTT VTTGND VTTREF VREFGND REFIN VDDQSNS PGND DRVL V5IN SW DRVH VBST S5S3TRIPMODEPGOOD TPS51216 www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 DEVICE INFORMATION RUK PACKAGE (TOP VIEW) PIN FUNCTIONS PIN I/O DESCRIPTION NAME NO. DRVH 14 O High-sideMOSFET gatedriveroutput. DRVL 11 O Low-sideMOSFET gatedriveroutput. GND 7 – Signalground. MODE 19 I ConnectresistortoGND toconfigureswitchingfrequencyand dischargemode. (See Table2) PGND 10 – Gate driverpower ground.R DS(on) currentsensinginput(+). PGOOD 20 O Powergood signalopen drainoutput.PGOOD goes highwhen VDDQ outputvoltageiswithinthetargetrange. ReferenceinputforVDDQ. Connecttothemidpointofa resistordividerfromVREF toGND. Add a capacitorforREFIN 8 I stableoperation. SW 13 I/O High-sideMOSFET gatedriverreturn.R DS(on) currentsensinginput(–). S3 17 I S3 signalinput.(See Table1) S5 16 I S5 signalinput.(See Table1) TRIP 18 I ConnectresistortoGND tosetOCL atVTRIP/8.Output10-μA currentatroom temperature,TC = 4700 ppm/°C. VBST 15 I High-sideMOSFET gatedriverbootstrapvoltageinput.Connecta capacitorfromtheVBST pintotheSW pin. VDDQSNS 9 I VDDQ outputvoltagefeedback.ReferenceinputforVTTREF. Alsoservesas power supplyforVTTREF. VLDOIN 2 I Power supplyinputforVTT LDO. ConnectVDDQ intypicalapplication. VREF 6 O 1.8-Vreferenceoutput. VTT 3 O VTT 2-A LDO output.Need toconnect10μF orlargercapacitanceforstability. VTTGND 4 – Power groundforVTT LDO. VTTREF 5 O BufferedVTT referenceoutput.Need toconnect0.22μF orlargercapacitanceforstability. VTTSNS 1 I VTT outputvoltagefeedback. V5IN 12 I 5-V power supplyinputforinternalcircuitsand MOSFET gatedrivers. Thermal – – ConnecttoGNDpad Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:TPS51216

15 VBST

12 V5IN

20 PGOOD

VREFIN +20% VDDQSNS

14 DRVH

11 DRVL

VREFIN –32% 16S5 Soft-Start NOC 8 R 6VREF Reference R 7GND 17S3 5VTTREF 1VTTSNS

4 VTTGND

3 VTT

+ 2 VLDOIN 7 R R VTT Discharge VTTREF Discharge On-Time Discharge Type Selection 15 /c109A

19 MODE

VREFIN +8/16 % VREFIN –8/16 % VDDQ Discharge V5OK 4.4 V/3.9 V UVP OVP TPS51216 SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com FUNCTIONAL BLOCK DIAGRAM

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−50 −25 0 25 50 75 100 125 Junction Temperature (°C) OVP/UVP Threshold (%) OVP UVP −50 −25 0 25 50 75 100 125 Junction Temperature (°C) VDDQSNS Discharge Current (mA) −50 −25 0 25 50 75 100 125 Junction Temperature (°C) VLDOIN Suppy Current (µA) −50 −25 0 25 50 75 100 125 Junction Temperature (°C) TRIP Source Current (µA) 200 400 600 800 1000 −50 −25 0 25 50 75 100 125 Junction Temperature (°C) V5IN Suppy Current (µA) −50 −25 0 25 50 75 100 125 Junction Temperature (°C) V5IN Shutdown Current (µA) TPS51216 www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 TYPICAL CHARACTERISTICS Figure1.V5IN Supply Currentvs JunctionTemperature Figure2.V5IN Shutdown Currentvs JunctionTemperature Figure3.VLDOIN Supply Currentvs JunctionTemperature Figure4.CurrentSense Currentvs JunctionTemperature Figure5.OVP/UVP Thresholdvs JunctionTemperature Figure6.VDDQSNS DischargeCurrentvs Junction Temperature Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:TPS51216

0 2 4 6 8 10 12 14 16 18 20 VDDQ Output Current (A) Switching Frequency (kHz) VVDDQ = 1.20 V VVDDQ = 1.35 V VVDDQ = 1.50 V R MODE = 200 kΩ VIN = 12 V 1.45 1.46 1.47 1.48 1.49 1.50 1.51 1.52 1.53 1.54 1.55 0 2 4 6 8 10 12 14 16 18 20 VDDQ Output Current (A) VDDQ Output Voltage (V) R MODE = 200 kΩ VIN = 12 V 200 300 400 500 600 700 800 6 8 10 12 14 16 18 20 22 Input Voltage (V) Switching Frequency (kHz) VVDDQ = 1.20 V VVDDQ = 1.35 V VVDDQ = 1.50 V R MODE = 200 kΩ IVDDQ = 10 A 100 200 300 400 500 600 700 800 0 2 4 6 8 10 12 14 16 18 20 VDDQ Output Current (A) Switching Frequency (kHz) VVDDQ = 1.20 V VVDDQ = 1.35 V VVDDQ = 1.50 V R MODE = 100 kΩ VIN = 12 V −50 −25 0 25 50 75 100 125 Junction Temperature (°C) VTT Discharge Current (mA) 200 300 400 500 600 700 800 6 8 10 12 14 16 18 20 22 Input Voltage (V) Switching Frequency (kHz) VVDDQ = 1.20 V VVDDQ = 1.35 V VVDDQ = 1.50 V R MODE = 100 kΩ IVDDQ = 10 A TPS51216 SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com TYPICAL CHARACTERISTICS (continued) Figure7.VTT DischargeCurrentvs JunctionTemperature Figure8.SwitchingFrequency vs InputVoltage Figure9.SwitchingFrequency vs InputVoltage Figure10.SwitchingFrequency vs Load Current Figure11.SwitchingFrequency vs Load Current Figure12. Load Regulation

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0.710 0.720 0.730 0.740 0.750 0.760 0.770 0.780 0.790 VTT Current (V) VTT Voltage (V) VVDDQ = 1.5 V 0.635 0.645 0.655 0.665 0.675 0.685 0.695 0.705 0.715 VTT Current (V) VTT Voltage (V) VVDDQ = 1.35 V 0.650 0.655 0.660 0.665 0.670 0.675 0.680 0.685 0.690 0.695 −10 −5 0 5 10 VTTREF Current (mA) VTTREF Voltage (V) VVDDQ = 1.35 V 0.580 0.585 0.590 0.595 0.600 0.605 0.610 0.615 0.620 −10 −5 0 5 10 VTTREF Current (mA) VTTREF Voltage (V) VVDDQ = 1.2 V 1.45 1.46 1.47 1.48 1.49 1.50 1.51 1.52 1.53 1.54 1.55 6 8 10 12 14 16 18 20 22 Input Voltage (V) VDDQ Output Voltage (V) IVDDQ = 0 A IVDDQ = 20 A R MODE = 200 kΩ 0.730 0.735 0.740 0.745 0.750 0.755 0.760 0.765 0.770 −10 −5 0 5 10 VTTREF Current (mA) VTTREF Voltage (V) VVDDQ = 1.5 V TPS51216 www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 TYPICAL CHARACTERISTICS (continued) Figure13. LineRegulation Figure14.VTTREF Load Regulation Figure15.VTTREF Load Regulation Figure16.VTTREF Load Regulation Figure17.VTT Load Regulation Figure18.VTT Load Regulation Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:TPS51216

0.560 0.570 0.580 0.590 0.600 0.610 0.620 0.630 0.640 VTT Current (V) VTT Voltage (V) VVDDQ = 1.2 V 100 0.001 0.01 0.1 1 10 100 VDDQ Output Current (A) Efficiency (%) VIN = 20 V VIN = 12 V VIN = 8 V VVDDQ = 1.5 V R MODE = 200 kΩ TPS51216 SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com TYPICAL CHARACTERISTICS (continued) Figure19.VTT Load Regulation Figure20.Efficiency Figure21. 1.5-VLoad TransientResponse Figure22. VTT Load TransientResponse

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www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 TYPICAL CHARACTERISTICS (continued) Figure25.1.5-VSoft-StopWaveforms (TrackingDischarge) Figure26.1.5-VSoft-StopWaveforms (Non-Tracking Discharge) Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:TPS51216

10000 100000 1000000 10000000 −80 −60 −40 −20 −180 −135 −90 −45 135 180 Frequency (Hz) Gain (dB) Phase (°) Gain Phase IVTT = −1 A 10000 100000 1000000 10000000 −80 −60 −40 −20 −180 −135 −90 −45 135 180 Frequency (Hz) Gain (dB) Phase (°) Gain Phase IVTT = 1 A TPS51216 SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com TYPICAL CHARACTERISTICS (continued) Figure27.VTT Bode Plot(Sink) Figure28.VTT Bode Plot(Source)

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700 /c109s400 /c109s 1.4 ms VREF VDDQ PGOOD UDG-10137 TPS51216 www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013

APPLICATION INFORMATION

VDDQ Switch Mode Power Supply Control TPS51216 supportsD-CAP ™ mode which does not requirecomplex externalcompensationnetworksand is suitablefordesignswithsmallexternalcomponents counts.The D-CAP ™ mode providesfasttransientresponse withappropriateamount of equivalentseriesresistance(ESR) on the outputcapacitors.An adaptiveon-time controlscheme isused to achievepseudo-constantfrequency.The TPS51216 adjuststhe on-time(tON ) to be inverselyproportionalto the inputvoltage(VIN) and proportionalto the outputvoltage(VDDQ ).This makes a switchingfrequencyfairyconstantoverthevariationofinputvoltageatthesteadystatecondition. VREF and REFIN, VDDQ Output Voltage The partprovidesa 1.8-V,±0.8% accurate,voltagereferencefrom VREF. This outputhas a 300-μA (max) currentcapabilitytodrivetheREFIN inputvoltagethrougha voltagedividercircuit.A capacitorwitha valueof 0.1-μF orlargershouldbe attachedclosetotheVREF terminal. The VDDQ switch-modepower supply(SMPS) outputvoltageisdefinedby REFIN voltage,withinthe range between 0.7V and 1.8V,programmed by theresister-dividerconnectedbetween VREF and GND. (See External Components Selectionsection.)A few nano faradsof capacitancefrom REFIN to GND isrecommended for stableoperation. Soft-Startand Powergood TPS51216 providesintegratedVDDQ soft-startfunctionstosuppressin-rushcurrentatstart-up.The soft-startis achievedby controllinginternalreferencevoltageramping up. Figure29 shows the start-upwaveforms.The switchingregulatorwaitsfor400μs afterS5 assertion.The MODE pinvoltageisread inthisperiod.A typical VDDQ ramp up durationis700μs. TPS51216 has a powergood open-drainoutputthatindicatestheVDDQ voltageiswithinthetargetrange.The targetvoltagewindow and transitiondelaytimesofthePGOOD comparatorare ±8% (typ)and 1-ms delayfor assertion(lowto high),and ±16% (typ)and 330-ns delayforde-assertion(highto low)duringrunning.The PGOOD comparatorisenabled1.1ms afterVREF israisedhighand thestart-updelayis2.5ms. Note thatthe timeconstantwhich iscomposed of the REFIN capacitorand a resistordividerneeds to be shortenough to reachthetargetvaluebeforePGOOD comparatorenabled. Figure29. TypicalStart-upWaveforms Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com Power StateControl The TPS51216 has two inputpins,S3 and S5, toprovidesimplecontrolscheme ofpower state.AllofVDDQ, VTTREF and VTT areturnedon atS0 state(S3=S5=high).InS3 state(S3=low,S5=high),VDDQ and VTTREF voltagesarekepton whileVTT isturnedoffand leftathighimpedance state(high-Z).The VTT outputfloatsand does notsinkorsourcecurrentinthisstate.InS4/S5 states(S3=S5=low),allofthethreeoutputsareturnedoff and dischargedtoGND accordingtothedischargemode selectedby MODE pin.Each statecode representsas follow;S0 = fullON, S3 = suspend toRAM (STR),S4 = suspend todisk(STD),S5 = softOFF. (See Table1) Table1.S3/S5 Power StateControl STATE S3 S5 VREF VDDQ VTTREF VTT S0 HI HI ON ON ON ON S3 LO HI ON ON ON OFF(High-Z) S4/S5 LO LO OFF OFF(Discharge) OFF(Discharge) OFF(Discharge) MODE Pin Configuration The TPS51216 readstheMODE pinvoltagewhen theS5 signalisraisedhighand storesthestatusina register. A 15-μA currentissourcedfromtheMODE pinduringthistimetoreadthevoltageacrosstheresistorconnected between the pinand GND. Table 2 shows resistorvalues,correspondingswitchingfrequencyand discharge mode configurations. Table2.MODE Selection RESISTANCE BETWEEN SWITCHINGMODE NO. DISCHARGE MODEMODE AND GND (kΩ) FREQUENCY (kHz) 3 200 400 Tracking 2 100 300 1 68 300 Non-tracking 0 47 400 DischargeControl In S4/S5 state,VDDQ, VTT, and VTTREF outputsare dischargedbased on the respectivedischargemode selectedabove. The trackingdischargemode dischargesVDDQ outputthroughthe internalVTT regulator transistorsenablingquickdischargeoperation.The VTT outputmaintainstrackingoftheVTTREF voltageinthis mode. (PleaserefertoFigure25)After4 ms oftrackingdischargeoperation,themode changes tonon-tracking discharge.The VDDQ outputmust be connectedto the VLDOIN pin in thismode. The non-trackingmode dischargesthe VDDQ and VTT pins using internalMOSFETs thatare connected to correspondingoutput terminals.The non-trackingdischargeisslow compared withthe trackingdischargedue to the lowercurrent capabilityoftheseMOSFETs. (PleaserefertoFigure26)

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/c61 /c163/c112 /c180 /c180 SW OUT f1f 2 ESR C 3 PWM VDDQSNS REFIN VREF Control Logic and DriverR1 DRVH DRVL 1.8 V VIN Lx ESR COUT RLOAD UDG-10136 High-Side MOSFET Low-Side MOSFET VDDQ TPS51216 www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 D-CAP ™ Mode Figure30 shows a simplifiedmodel ofD-CAP ™ mode architecture. Figure30. SimplifiedD-CAP ™ Model The VDDQSNS voltageiscompared withREFIN voltage.The PWM comparatorcreatesa setsignaltoturnon the high-sideMOSFET. The gainand speed of the comparatorishighenough to maintainthe voltageat the beginningof each on-cycle(orthe end of each off-cycle)to be substantiallyconstant.The DC outputvoltage monitoredatVDDQ may have lineregulationdue torippleamplitudethatslightlyincreasesas theinputvoltage increase.The D-CAP ™ mode offersflexibilityon outputinductanceand capacitanceselectionsand provides ease-of-usewitha low externalcomponent count.However, itrequiresa sufficientamount of outputripple voltageforstableoperationand good jitterperformance. The requirementforloopstabilityissimpleand isdescribedinEquation1. The 0-dB frequency,f0 definedin Equation1,isrecommended tobe lowerthan1/3oftheswitchingfrequencytosecureproperphase margin. where

• ESR istheeffectiveseriesresistanceoftheoutputcapacitor
• C OUT isthecapacitanceoftheoutputcapacitor
• fsw isswitchingfrequency (1) Jitterisanotherattributecaused by signal-to-noiseratioof the feedbacksignal.One of the major factorsthat determinejitterperformancein D-CAP ™ mode is the down-slope angle of the VDDQSNS ripplevoltage. Figure31 shows,inthesame noisecondition,a jitterisimprovedby making theslopeanglelarger. Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:TPS51216

/c40 /c41 /c45/c61 /c180 /c180 /c180 IN OUT OUT LOAD(LL) X IN SW V V V 1I 2 L V f /c180 /c179/c180 OUT SW X V ESR 20 mVf L VVDDQSNS VREFIN (1) (2) tON tOFF Slope (2) Jitter 20 mV Slope (1) Jitter UDG-10139 VREFIN +Noise TPS51216 SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com Figure31. RippleVoltageSlope and JitterPerformance Fora good jitterperformance,use therecommended down slopeofapproximately20 mV perswitchingperiodas shown inFigure31 and Equation2. where

• VOUT istheVDDQ outputvoltage
• LX istheinductance (2) Light-LoadOperation Inauto-skipmode, theTPS51216 SMPS controllogicautomaticallyreducesitsswitchingfrequencytoimprove light-loadefficiency.To achievethisintelligence,a zerocrossdetectioncomparatorisused topreventnegative inductorcurrentby turningoffthelow-sideMOSFET. Equation3 shows theboundaryloadconditionofthisskip mode and continuousconductionoperation. (3)

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0.22 /c109F AGND TPS51216 www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 VTT and VTTREF TPS51216 integratestwo high performance,low-drop-outlinearregulators,VTT and VTTREF, to provide completeDDR2/DDR3/DDR3L power solutions.The VTTREF has a 10-mA sink/sourcecurrentcapability,and tracks½ ofVDDQSNS with±1% accuracyusingan on-chip½ divider.A 0.22-μF (orlarger)ceramiccapacitor must be connectedcloseto the VTTREF terminalforstableoperation.The VTT responds quicklyto track VTTREF within±40 mV atallconditions,and thecurrentcapabilityis2 A forbothsinkand source.A 10-μF (or larger)ceramiccapacitor(s)need tobe connectedclosetotheVTT terminalforstableoperation.To achievetight regulationwithminimum effectofwiringresistance,a remotesensingterminal,VTTSNS, shouldbe connectedto the positivenode of VTT outputcapacitor(s)as a separatetracefrom the high-currentlineto the VTT pin. (PleaserefertotheLayoutConsiderationssectionfordetails.) When VTT isnotrequiredinthedesign,thefollowingtreatmentsarestronglyrecommended.

• ConnectVLDOIN toVDDQ.
• TieVTTSNS toVTT, and remove capacitorsfromVTT tofloat.
• ConnectVTTGND toGND.
• SelectMODE 0 orMODE 1 shown inTable2 (SelectNon-trackingdischargemode).
• Maintaina 0.22-µF capacitorconnectedatVTTREF.
• Pull-downS3 toGND with1-kΩ resistance. Figure32. ApplicationCircuitWhen VTT IsNot Required Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:TPS51216

/c40 /c41 /c40 /c41 /c40 /c41 /c230 /c246 /c230 /c246 /c45/c231 /c247 /c231 /c247/c61 /c43 /c61 /c43 /c180 /c180/c231 /c247 /c231 /c247 /c180 /c180 /c180/c232 /c248 /c232 /c248 IND ripple IN OUT OUTTRIP TRIP OCL X SW INDS on DS on I V V VV V 1I 8 R 2 8 R 2 L f V /c61 /c180TRIP TRIP TRIPV R I TPS51216 SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com VDDQ Overvoltageand UndervoltageProtection TPS51216 setstheovervoltageprotection(OVP) when theVDDQSNS voltagereachesa level20% (typ)higher than the REFIN voltage.When an OV event isdetected,the controllerlatchesDRVH low and DRVL high. VTTREF and VTT are turnedoffand dischargedusingthenon-trackingdischargeMOSFETs regardlessofthe trackingmode. The undervoltageprotection(UVP) latchissetwhen theVDDQSNS voltageremainslowerthan68% (typ)ofthe REFIN voltagefor1 ms or longer.In thisfaultcondition,the controllerlatchesDRVH low and DRVL low and dischargesthe VDDQ, VTT and VTTREF outputs.UVP detectionfunctionisenabled after1.2 ms of SMPS operationtoensurestartup. To releasethe OVP and UVP latches,toggleS5 or adjustthe V5IN voltagedown and up beyond the undervoltagelockoutthreshold. VDDQ OvercurrentProtection The VDDQ SMPS has cycle-by-cycleovercurrentlimitingprotection.The inductorcurrentismonitoredduringthe off-stateusingthelow-sideMOSFET R DS(on) and thecontrollermaintainstheoff-statewhilethevoltageacross thelow-sideMOSFET islargerthantheovercurrenttriplevel.The currentmonitorcircuitinputsare PGND and SW pinsso thatthoseshouldbe properlyconnectedtothesourceand drainterminalsoflow-sideMOSFET. The overcurrenttriplevel,VTRIP, isdeterminedby Equation4, where R TRIP isthe valueof the resistorconnected between theTRIP pinand GND, and ITRIP isthecurrentsourcedfrom theTRIP pin.ITRIP is10 μA typicallyat room temperature,and has 4700ppm/°C temperaturecoefficienttocompensate thetemperaturedependency of thelow-sideMOSFET R DS(on). (4) Because thecomparisonisdone duringtheoff-state,VTRIP setsthevalleyleveloftheinductorcurrent.The load currentOCL level,IOCL ,can be calculatedby consideringtheinductorripplecurrentas shown inEquation5 where

• IIND(ripple)isinductorripplecurrent (5) Inan overcurrentcondition,thecurrenttotheloadexceeds thecurrenttotheoutputcapacitor,thustheoutput voltagetendstofalldown. Eventually,itcrossestheundervoltageprotectionthresholdand shutsdown. VTT OvercurrentProtection The LDO has an internallyfixedconstantovercurrentlimitingof3-A (typ)forbothsinkand sourceoperation. V5IN UndervoltageLockout Protection TPS51216 has a 5-V supplyundervoltagelockoutprotection(UVLO) threshold.When theV5IN voltageislower than UVLO thresholdvoltage,typically3.93 V, VDDQ, VTT and VTTREF are shut off.This is a non-latch protection. Thermal Shutdown TPS51216 includesan internaltemperaturemonitor.Ifthetemperatureexceedsthethresholdvalue,140°C (typ), VDDQ, VTT and VTTREF areshutoff.The thermalshutdownstateofVDDQ isopen,VTT and VTTREF arehigh impedance (high-Z)respectively,and thedischargefunctionsaredisabled.Thisisa non-latchprotectionand the operationisrestartedwithsoft-startsequence when thedevicetemperatureisreducedby 10°C (typ).

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/c180 /c179/c180 OUT SW X V ESR 20 mVf L /c163/c112 /c180 /c180 SW OUT

2 ESR C 3

/c40 /c41 /c40 /c41 /c40 /c41 /c230 /c246 /c230 /c246 /c45/c231 /c247/c180 /c45 /c180 /c180 /c231 /c247 /c231 /c247/c231 /c247 /c180 /c180/c232 /c248/c232 /c248/c61 IN OUT OUT OCL DS(on) X SW IN TRIP TRIP V V V8 I R2 L f V R I /c40 /c41 /c40 /c41 /c40 /c41/c40 /c41 /c40 /c41 /c45 /c180 /c61 /c43 /c180 /c180 /c180 IN OUT OUTmaxTRIP IND peak X SW INDS on max V V VV 1I 8 R L f V /c40 /c41 /c40 /c41/c40 /c41 /c40 /c41 /c40 /c41 /c40 /c41/c40 /c41 /c40 /c41 /c45 /c180 /c45 /c180 /c61 /c180 /c61 /c180 /c180 /c180 IN OUT OUT IN OUT OUTmax max X SW IN O SW ININD ripple max max max V V V V V V1 3L I f V I f V /c40 /c41 /c61 /c230 /c246 /c231 /c247 /c231 /c247 /c231 /c247 /c45/c180/c230 /c246/c231 /c247 /c231 /c247/c45/c231 /c247 /c231 /c247/c231 /c247 /c232 /c248/c232 /c248 IND ripple OUT R1R2 1.8 1I ESR V 2 TPS51216 www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 ExternalComponents Selection The externalcomponents selectionissimpleinD-CAP ™ mode. 1. DETERMINE THE VALUE OF R1 AND R2 The outputvoltageis determinedby the value of the voltage-dividerresistor,R1 and R2 as shown in Figure30.R1 isconnectedbetween VREF and REFIN pins,and R2 isconnectedbetween theREFIN pin and GND. SettingR1 as 10-kΩ isa good startingpoint.DetermineR2 usingEquation6. (6) 2. CHOOSE THE INDUCTOR The inductancevalueshouldbe determinedtoyielda ripplecurrentofapproximately¼ to½ ofmaximum outputcurrent.Largerripplecurrentincreasesoutputripplevoltageand improvesthe signal-to-noiseratio and helpsstableoperation. (7) The inductorneeds a lowdirectcurrentresistance(DCR) toachievegood efficiency,as wellas enough room above peak inductorcurrentbeforesaturation.The peak inductorcurrentcan be estimatedinEquation8. (8) 3. CHOOSE THE OCL SETTING RESISTANCE, R TRIP CombiningEquation4 and Equation5,R TRIP can be obtainedusingEquation9. (9) 4. CHOOSE THE OUTPUT CAPACITORS Organicsemiconductorcapacitor(s)or specialtypolymercapacitor(s)are recommended. DetermineESR to meet smallsignalstabilityand recommended ripplevoltage.A quickreferenceisshown inEquation10 and Equation11. (10) (11) Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 21 ProductFolderLinks:TPS51216

/c180 /c180/c179 /c179 /c112 /c180 /c180 SW OUT SW OUT 20 mV f L 3ESR or ESRV 2 f C VTTSNS TPS51216RUK VLDOIN VTT VTTGND VBST DRVH SW V5IN 5 11VTTREF DRVL 10987 PGND VDDQSNS REFIN GND

6 VREF

0.1 /c109F 10 /c109F 10 /c109F C10 10 /c109F VIN

8 V to 20 V

0.1 /c109F R7 0 /c87 L1 0.56 /c109H FDMS8670AS FDMS8670AS C11 330 /c109F VDDQ_GND PGND AGNDR5 49 k/c87 10 k/c87 0.1 /c109F 10 nF 0.22 /c109F 10 /c109F C12 10 /c109F PGND VTT

0.75 V/2 A

0.75 V VTTGND 100 k/c87 R2 200 k /c87 R3 36 k/c87 V5IN 4.5 V to 5.5 V FDMS8680 VDDQ

1.5 V/20 A

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com TPS51216 ApplicationCircuit Figure33. DDR3, 400-kHz ApplicationCircuit,TrackingDischarge Table3.DDR3, 400-kHz ApplicationCircuit,ListofMaterials REFERENCE QTY SPECIFICATION MANUFACTURE PART NUMBERDESIGNATOR C8, C9, C10 3 10 µF,25 V TaiyoYuden TMK325BJ106MM C11 1 330 µF,2V,6 m Ω Panasonic EEFSX0D331XE L1 1 0.56µH, 21 A,1.56m Ω Panasonic ETQP4LR56WFC Q1 1 30 V,35 A,8.5m Ω Fairchild FDMS8680 Q2, Q3 2 30 V,42 A,3.5m Ω Fairchild FDMS8670AS For thisexample,the bulkoutputcapacitorESR requirementforD-CAP ™ mode isdescribedinEquation12, whicheverisgreater. (12)

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12 VOUT

0.22 /c109F VTTREF 10 /c109F 10 nF 0.1 /c109F VTT VTTGND VLDOIN 1 /c109F TPS51216 www.ti.com SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 Layout Considerations Certainissuesmust be consideredbeforedesigninga layoutusingtheTPS51216. Figure34. DC/DC ConverterGround System

• VIN capacitor(s),VOUT capacitor(s)and MOSFETs arethepower components and shouldbe placedon one sideofthePCB (solderside).Othersmallsignalcomponents shouldbe placedon anotherside(component side).At leastone innerplaneshouldbe inserted,connectedto ground,inorderto shieldand isolatethe smallsignaltracesfromnoisypower lines.
• Allsensitiveanalogtracesand components such as VDDQSNS, VTTSNS, MODE, REFIN, VREF and TRIP shouldbe placedaway from high-voltageswitchingnodes such as SW, DRVL, DRVH or VBST to avoid coupling.Use internallayer(s)as ground plane(s)and shieldfeedback tracefrom power tracesand components.
• The DC/DC converterhas severalhigh-currentloops.The areaoftheseloopsshouldbe minimizedinorderto suppressgeneratingswitchingnoise. – The most importantlooptominimizetheareaofisthepathfromtheVIN capacitor(s)throughthehighand low-sideMOSFETs, and back tothecapacitor(s)throughground.Connect thenegativenode oftheVIN capacitor(s)and thesourceofthelow-sideMOSFET atgroundas closeas possible.(Refertoloop#1 of Figure34) – The second importantloop is the path from the low-sideMOSFET through inductorand VOUT capacitor(s),and back tosourceofthelow-sideMOSFET throughground.Connect sourceofthelow-side MOSFET and negativenode ofVOUT capacitor(s)atground as closeas possible.(Refertoloop#2 of Figure34) – The thirdimportantloop isof gate drivingsystem forthe low-sideMOSFET. To turnon the low-side MOSFET, highcurrentflowsfromV5IN capacitorthroughgatedriverand thelow-sideMOSFET, and back tonegativenode ofthecapacitorthroughground.To turnoffthelow-sideMOSFET, highcurrentflows fromgateofthelow-sideMOSFET throughthegatedriverand PGND, and back tosourceofthelow-side MOSFET throughground.Connect negativenode ofV5IN capacitor,sourceofthelow-sideMOSFET and PGND atgroundas closeas possible.(Refertoloop#3 ofFigure34)
• Because the TPS51216 controlsoutputvoltagereferringto voltageacross VOUT capacitor,VDDQSNS shouldbe connectedtothepositivenode ofVOUT capacitor.Ina same manner GND shouldbe connectedto thenegativenode ofVOUT capacitor. Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 23 ProductFolderLinks:TPS51216

SLUSAB9A –NOVEMBER 2010–REVISED APRIL 2013 www.ti.com

• Connect the overcurrentsettingresistorsfrom TRIP pinto ground and make the connectionsas closeas possibletothedevice.The tracefromTRIP pintoresistorand fromresistortogroundshouldavoidcoupling toa high-voltageswitchingnode.
• Connect thefrequencyand mode settingresistorfrom MODE pintoground,and make theconnectionsas closeas possibletothedevice.The tracefromtheMODE pintotheresistorand fromtheresistortoground shouldavoidcouplingtoa high-voltageswitchingnode
• Connectionsfromgatedriverstotherespectivegateofthehigh-sideorthelow-sideMOSFET shouldbe as shortas possibletoreducestrayinductance.Use 0.65mm (25mils)orwidertraceand via(s)ofatleast0.5 mm (20mils)diameteralongthistrace.
• The PCB tracedefinedas SW node,whichconnectstothesourceoftheswitchingMOSFET, thedrainofthe rectifyingMOSFET and thehigh-voltagesideoftheinductor,shouldbe as shortand wideas possible.
• VLDOIN shouldbe connectedtoVDDQ outputwithshortand wide traces.An inputbypass capacitorshould be placedas closeas possibletothepinwithshortand wide connections.
• The outputcapacitorforVTT shouldbe placedclosetothepinwitha shortand wide connectioninorderto avoidadditionalESR and/orESL ofthetrace.
• VTTSNS shouldbe connectedtothepositivenode oftheVTT outputcapacitor(s)as a separatetracefrom thehigh-currentpower lineand isstronglyrecommended toavoidadditionalESR and/orESL. Ifitisneeded to sense the voltageat the pointof the load,itisrecommended to attachthe outputcapacitor(s)at that point.Also,itisrecommended tominimizeany additionalESR and/orESL ofgroundtracebetween GND pin and theoutputcapacitor(s).
• Consideraddinga low pass filter(LPF)atVTTSNS incase theESR oftheVTT outputcapacitor(s)islarger than2 m Ω.
• VDDQSNS can be connectedseparatelyfromVLDOIN. Remember thatthissensingpotentialisthereference voltageofVTTREF. Avoidany noisegenerativelines.
• The negativenode of the VTT outputcapacitor(s)and the VTTREF capacitorshouldbe tiedtogetherby avoiding common impedance tohigh-currentpathoftheVTT source/sinkcurrent.
• GND pinnode representsthereferencepotentialforVTTREF and VTT outputs.Connect GND tonegative nodes of VTT capacitor(s),VTTREF capacitorand VDDQ capacitor(s)withcare to avoidadditionalESR and/orESL. GND and PGND shouldbe connectedtogetherata singlepoint.
• In orderto effectivelyremove heat from the package,preparethe thermallandand solderto the package thermalpad. Wide traceof the component-sidecopper,connected to thisthermalland,helps heat spreading. Numerous viaswitha 0.3-mm diameterconnectedfrom thethermallandtotheinternal/solder- sideground plane(s)shouldbe used tohelpdissipation. CAUTION Do NOT connectPGND pindirectlytothisthermallandunderneaththepackage.

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REVISION HISTORY

Changes from Original(November 2010)toRevisionA Page Copyright© 2010–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 25 ProductFolderLinks:TPS51216

www.ti.com 7-Oct-2025 PACKAGING INFORMATION Orderable part number Status (1) Material type (2) Package | Pins Package qty | Carrier RoHS (3) Lead finish/ Ball material (4) MSL rating/ Peak reflow (5) Op temp (°C) Part marking (6) FX004 Active Production WQFN (RUK) | 20 3000 | LARGE T&R Yes NIPDAU Level-2-260C-1 YEAR -40 to 85 51216 TPS51216RUKR Active Production WQFN (RUK) | 20 3000 | LARGE T&R Yes NIPDAU Level-2-260C-1 YEAR -40 to 85 51216 TPS51216RUKR.B Active Production WQFN (RUK) | 20 3000 | LARGE T&R Yes NIPDAU Level-2-260C-1 YEAR -40 to 85 51216 TPS51216RUKT Active Production WQFN (RUK) | 20 250 | SMALL T&R Yes NIPDAU Level-2-260C-1 YEAR -40 to 85 51216 TPS51216RUKT.B Active Production WQFN (RUK) | 20 250 | SMALL T&R Yes NIPDAU Level-2-260C-1 YEAR -40 to 85 51216 TPS51216RUKTG4 Active Production WQFN (RUK) | 20 250 | SMALL T&R Yes NIPDAU Level-2-260C-1 YEAR -40 to 85 51216 TPS51216RUKTG4.B Active Production WQFN (RUK) | 20 250 | SMALL T&R Yes NIPDAU Level-2-260C-1 YEAR -40 to 85 51216 (1) Status: For more details on status, see our product life cycle. (2) Material type: When designated, preproduction parts are prototypes/experimental devices, and are not yet approved or released for full production. Testing and final process, including without limitation quality assurance, reliability performance testing, and/or process qualification, may not yet be complete, and this item is subject to further changes or possible discontinuation. If available for ordering, purchases will be subject to an additional waiver at checkout, and are intended for early internal evaluation purposes only. These items are sold without warranties of any kind. (3) RoHS values: Yes, No, RoHS Exempt. See the TI RoHS Statement for additional information and value definition. (4) Lead finish/Ball material: Parts may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. (5) MSL rating/Peak reflow: The moisture sensitivity level ratings and peak solder (reflow) temperatures. In the event that a part has multiple moisture sensitivity ratings, only the lowest level per JEDEC standards is shown. Refer to the shipping label for the actual reflow temperature that will be used to mount the part to the printed circuit board. (6) Part marking: There may be an additional marking, which relates to the logo, the lot trace code information, or the environmental category of the part. Multiple part markings will be inside parentheses. Only one part marking contained in parentheses and separated by a "~" will appear on a part. If a line is indented then it is a continuation of the previous line and the two combined represent the entire part marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

www.ti.com 7-Oct-2025 OTHER QUALIFIED VERSIONS OF TPS51216 :

• Enhanced Product : TPS51216-EP NOTE: Qualified Version Definitions:
• Enhanced Product - Supports Defense, Aerospace and Medical Applications Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 25-Jul-2025 TAPE AND REEL INFORMATION Reel Width (W1) REEL DIMENSIONS A0B0K0WDimension designed to accommodate the component lengthDimension designed to accommodate the component thicknessOverall width of the carrier tapePitch between successive cavity centersDimension designed to accommodate the component width TAPE DIMENSIONSK0 P1B0WA0Cavity QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Pocket QuadrantsSprocket HolesQ1Q1Q2Q2Q3Q3Q4Q4User Direction of Feed P1ReelDiameter *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION www.ti.com 25-Jul-2025 TAPE AND REEL BOX DIMENSIONS Width (mm) W LH *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPS51216RUKR WQFN RUK 20 3000 353.0 353.0 32.0 TPS51216RUKT WQFN RUK 20 250 213.0 191.0 35.0 TPS51216RUKTG4 WQFN RUK 20 250 213.0 191.0 35.0 Pack Materials-Page 2

www.ti.com GENERIC PACKAGE VIEW This image is a representation of the package family, actual package may vary. Refer to the product data sheet for package details. WQFN - 0.8 mm max heightRUK 20 PLASTIC QUAD FLATPACK - NO LEAD3 x 3, 0.4 mm pitch 4229651/A

www.ti.com PACKAGE OUTLINE C SEE TERMINAL DETAIL 20X 0.25 0.15 1.7 0.05 20X 0.5 0.3

0.8 MAX

(DIM A) TYP OPT 02 SHOWN 0.05 0.00 16X 0.4 1.6 A 3.1 2.9 B 3.1 2.9 0.25 0.15 0.5 0.3 WQFN - 0.8 mm max heightRUK0020B PLASTIC QUAD FLATPACK - NO LEAD 4222676/A 02/2016 DIMENSION A OPTION 01 (0.1) OPTION 02 (0.2) PIN 1 INDEX AREA 0.08 C SEATING PLANE 5 11 6 10 20 16 (OPTIONAL) PIN 1 ID

0.1 C A B

0.05 EXPOSED THERMAL PAD

21 SYMM

NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance. SCALE 4.000 DETAIL OPTIONAL TERMINAL TYPICAL

www.ti.com EXAMPLE BOARD LAYOUT

0.05 MIN

0.05 MAX

20X (0.2) 20X (0.6) ( ) TYP VIA 0.2 16X (0.4) (2.8) (2.8) (0.6) TYP ( 1.7) (R ) TYP 0.05 WQFN - 0.8 mm max heightRUK0020B PLASTIC QUAD FLATPACK - NO LEAD 4222676/A 02/2016 SYMM 6 10 1620 SYMM LAND PATTERN EXAMPLE SCALE:20X NOTES: (continued) 4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271). 5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view. It is recommended that vias under paste be filled, plugged or tented. SOLDER MASK OPENING METAL UNDER SOLDER MASK SOLDER MASK DEFINED METAL SOLDER MASK OPENINGSOLDER MASK DETAILS NON SOLDER MASK DEFINED (PREFERRED)

www.ti.com EXAMPLE STENCIL DESIGN 20X (0.6) 20X (0.2) 16X (0.4) (2.8) (2.8) 4X ( 0.75) (0.47) TYP (0.47) TYP (R ) TYP0.05 WQFN - 0.8 mm max heightRUK0020B PLASTIC QUAD FLATPACK - NO LEAD 4222676/A 02/2016 NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. SYMM METAL TYP SOLDER PASTE EXAMPLE BASED ON 0.1 mm THICK STENCIL EXPOSED PAD 21: 78% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE SCALE:20X SYMM 6 10 1620

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