FS40SM-5 RENESAS
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Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 To all our customers
Feb.1999 250 ±30 120 275 –55 ~ +150 –55 ~ +150 4.8 V V A A W g FS40SM-5 VDSS VGSS ID IDM PD Tch Tstg 15.9MAX. 4.5 1.5 φ 3.2 5.0 20.019.5MIN. 1.0 5.45 4.4 0.6 2.8 qwe 5.45 r wr q e q GATE w DRAIN e SOURCE r DRAIN OUTLINE DRAWING Dimensions in mm VGS = 0V VDS = 0V Typical value Symbol Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight TO-3P MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit
Feb.1999 300 0 200 150 100 50 0 250 200 150 100 100 102 101 23 57 1 0 1 23 57 1 0 2 23 57 1 0 3 TC = 25°C Single Pulse tw=10µs 100µs 1ms 10ms DC 100ms 00 4 8 12 16 20 PD = 275W TC = 25°C Pulse Test VGS=20V 10V 4.5V 00 1 02 03 04 05 0 TC = 25°C Pulse Test VGS = 20V 10V PD = 275W POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 20A, VGS = 10V ID = 20A, VGS = 10V ID = 20A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V , ID = 20A, VGS = 10V, RGEN = RGS = 50Ω IS = 20A, VGS = 0V Channel to case V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W 250 ±30 12.0 0.066 1.32 18.0 2850 580 110 125 310 140 1.5 ±10 0.086 1.72 2.0 0.45 ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol UnitParameter Limits Min. Typ. Max. PERFORMANCE CURVES Test conditions
Feb.1999 00 4 8 12 16 20 102 100 100 23 5 7 1 0 1 101 23 5 7 1 0 2 TC = 25°C VDS = 10V Pulse Test 125°C 75°C 00 4 8 12 16 20 TC = 25°C Pulse Test 40A 20A ID = 60A 2310–1 571 0 0 23 57 1 0 1 23 57 1 0 2 0.08 0.06 0.04 0.02
0.10 TC = 25°C
Pulse Test VGS = 10V 20V 23 571 0 2 103 102 101 23 571 0 123 571 0 0 23 Ciss Tch = 25°C f = 1MHz V GS = 0V Coss Crss 23 5 7 1 0 1 103 102 23 5 7 1 0 2100 101 Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 50Ω tf td(off) tr td(on) TC = 25°C VDS = 50V Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE
Feb.1999 5.0 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 VDS = 10V ID = 1mA 1.4 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 VGS = 0V ID = 1mA 100 10–1 –50 101 0 50 100 150 VGS = 10V ID = 1/2ID Pulse Test 25°C VGS = 0V Pulse TestTC=125°C 75°C 00 40 80 120 160 200 200V 100V VDS = 50V Tch = 25°C ID = 40A 10–4 101 100 10–1 23 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–110–2 PDM tw D= T tw T D=1 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) MITSUBISHI Nch POWER MOSFET FS40SM-5 HIGH-SPEED SWITCHING USE