FS30ASH-06 RENESAS

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Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 To all our customers

Feb.1999 FS30ASH-06 OUTLINE DRAWING Dimensions in mm MP-3 MITSUBISHI Nch POWER MOSFET FS30ASH-06 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. ±10 120 120 –55 ~ +150 –55 ~ +150 0.26 V GS = 0V VDS = 0V L = 100µH T ypical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight V V A A A A A W g VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Symbol MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit 6.5 2.3 2.3 0.9MAX. 1 .0MAX. 2.3 1.0 0.5 – 0.1 5.5 – 0.2 10MAX. 2.3MIN. 1.5 – 0.2 0.5 – 0.2 0.8 5.0 – 0.2 A q GATE w DRAIN e SOURCE r DRAIN wr q qwe r e \` 2.5V DRIVE

Feb.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs C iss C oss C rss td (on) tr td (off) tf VSD R th (ch-c) trr MITSUBISHI Nch POWER MOSFET FS30ASH-06 HIGH-SPEED SWITCHING USE V µA mA V m Ω m Ω V S pF pF pF ns ns ns ns V °C/W ns 0.6 0.9 0.38 2000 320 170 135 145 150 1.0 ±0.1 0.1 1.2 0.45 1.5 3.57 ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol UnitParameter Test conditions Limits Min. Typ. Max. 0 200 50 100 150 POWER DISSIPATION DERATING CURVE CASE TEMPERATURE T C (°C) POWER DISSIPATION P D (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE V DS (V) 100 101 102 10035 7 2 1 0 135 7 2 1 0 235 7 23 tw = 10ms TC = 25°C Single Pulse 100ms 10ms 1ms DC PD = 35W TC = 25°C Pulse Test VGS = 5V4V 2.5V 3.5V TC = 25°C Pulse Test VGS = 5V4V 3V 2.5V 1.5V PD = 35W PERFORMANCE CURVES ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 2.5V ID = 15A, VGS = 4V ID = 15A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDD = 30V, ID = 15A, VGS = 4V, RGEN = RGS = 50Ω IS = 15A, VGS = 0V Channel to case IS = 30A, dis/dt = –100A/µs

Feb.1999 MITSUBISHI Nch POWER MOSFET FS30ASH-06 HIGH-SPEED SWITCHING USE 035 7 2 1 0 135 7 2 1 0 235 7 23 VGS = 2.5V TC = 25°C Pulse Test TC = 25°C VDS = 10V Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ ) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE V GS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE V DS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) 0.4 0.8 1.2 1.6 2.0 TC = 25°C Pulse Test ID = 50A 30A 10A 100 10123 4 5 7 1 0 223 4 5 7100 101 102 TC = 25°C VDS = 10V Pulse Test 75°C 125°C 101 102 103 104 10035 7 2 1 0 135 7 2 1 0 235 7 3 2 Tch = 25°C f = 1MHZ VGS = 0V Ciss Coss Crss 100 10123 4 5 7 1 0 223 4 5 7101 102 103

7 TC h = 25°C

VDD = 30V VGS = 4V R GEN = RGS = 50Ω td(off) td(on) tf tr

Feb.1999 MITSUBISHI Nch POWER MOSFET FS30ASH-06 HIGH-SPEED SWITCHING USE 1.0 2.0 3.0 4.0 5.0 0 1 02 03 04 05 0 VDS = 10V Tch = 25°C ID = 30A 20V 40V VGS = 0V Pulse Test TC = 125°C 75°C 25°C GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE CHARGE Q g (nC) GATE-SOURCE VOLTAGE V GS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE V SD (V) SOURCE CURRENT I S (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Z th (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE r DS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) 10–1 100 101 –50 0 50 100 150 VGS = 4V ID = 1/2ID Pulse Test 0.4 0.8 1.2 1.6 2.0 –50 0 50 100 150 VDS = 10V ID = 1mA 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D = T tw T D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse