FRD4N65 GWSEMI

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Technical content

  1. Gate 2. Drain 3. Source Pin Definition: PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 650 2.6@ VGS =10V 4 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RDS(ON)<2.6Ω @ VGS=10V Fast switching capability Lead free in compliance with EU RoHS directive. Green molding compound PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 4.0 A Pulsed Drain Current (Note 2) IDM 16 A Avalanche Energy Single Pulsed (Note 3) EAS 260 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 30mH, IAS = 3.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C Block Diagram D G S FRD4N65 N-Channel Power MOSFET

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS GSV = 0V, ID = 250μA 650 V Drain-Source Leakage Current IDSS VDS = 650V, VGS = 0V 1 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse e VGS = -30V, VDS = 0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) DSV = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) VGS= 10 V, ID = 2A 2.3 2.6 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz 670 pF Output Capacitance COSS pF 70 Reverse Transfer Capacitance CRSS pF 23 SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 325V, I D =4.0A, RG = 25Ω (Note 1, 2) 45 ns Turn-On Rise Time tR ns 100 Turn-Off Delay Time tD(OFF) ns 200 Turn-Off Fall Time tF ns Total Gate Charge QG VDS= 520V,ID= 4.0A, VGS= 10V (Note 1, 2) 100 nC Gate-Source Charge QGS nC 17 Gate-Drain Charge QGD nC 20 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS= 0V, IS = 4A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 16 A Reverse Recovery Time trr VGS = 0 V, IS = 4A, dIF/dt = 100 A/ μs (Note 1) 260 ns Reverse Recovery Charge QRR μC 2.5 Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. . Essenti ly independent of operating temperature 130 THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA °C/W 110 Junction to Case θJC °C/W 2.9 N-Channel Power MOSFETFRD4N65

TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Peak Diode Recovery dv/dt Waveforms N-Channel Power MOSFETFRD4N65

TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform VDD BVDSS IAS ID(t) VDS(t) Unclamped Inductive Switching Test Circuit tp Time Unclamped Inductive Switching Waveforms N-Channel Power MOSFETFRD4N65

-100 Drain-Source Breakdown Voltage, BVDSS (Normalized) (V) Junction Temperature, TJ (°С) -50 50 200100 150 1.2 1.1 1.0 0.9 0.8 Note: 1. . GS=0V 2. .D=250µA Breakdown Voltage Variation vs. Temperature -100 Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) Junction Temperature, TJ (°С) -50 50 200100 150 3.0 2.0 1.0 0.5 0.0 1.5 2.5 On-Resistance Junction Temperature Note: 1. . GS=10V 2. .D=4A 100.1 1 Drain-to-Source Voltage, VDS (V) On-State Characteristics 0.1 Gate-Source Voltage, VGS (V) Transfer Characteristics 46 8 1 0 150°С Notes: 1. VDS=50V 2. 250µs Pulse Test 0.1 25°С 5.0V Notes: 1. . 50µs Pulse Test 2. TC=25°С VGS Top: op: 5.5V 5 V Bottorm:5.0V N-Channel Power MOSFETFRD4N65

TYPICAL CHARACTERISTICS(Cont.) 1200 0.1 Drain-SourceVoltage, VDS (V) 1000 200 11 0 Ciss 800 600 Notes: 1. VGS=0V 2. f f 1MHz Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Capacitance Characteristics (Non-Repetitive) Total Gate Charge, QG (nC) 5 15 25 Note: ID=4A VDS=120V VDS=300V VDS=480V Gate Charge Characteristics Coss Crss 400 Thermal Response, θJC (t) PD (w) N-Channel Power MOSFETFRD4N65