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- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content
Features
- High Surge Capability DO-5 Package
- Types up to 600 V VRRM Parameter Symbol FR70B(R)02 F R70D(R)02 FR70G(R)02 Unit Repetitive peak reverse V 100 200 400 V FR70J(R)02 600 FR70B02 thru FR70JR02 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions Silicon Fast Recovery Diode pp voltage VRRM 100 200 400 V RMS reverse voltage VRMS 70 140 280 V DC blocking voltage VDC 100 200 400 V Continuous forward current IF 70 70 70 A Operating temperature Tj -40 to 125 -40 to 125 -40 to 125 °C Storage temperature Tstg -40 to 150 -40 to 150 -40 to 150 °C Parameter Symbol FR70B(R)02 F R70D(R)02 FR70G(R)02 Unit Diode forward voltage 1.5 1.5 1.5 25 25 25 μA 15 15 15 mA Recovery Time Maximum reverse recovery time TRR 200 200 200 nS Thermal characteristics Thermal resistance, junction - case RthJC 0.8 0.8 0.8 °C/W 1.5 600 420 600 870 IF=0.5 A, IR=1.0 A, IRR= 0.25 A VR = 100 V, Tj = 125 °C V 250 0.8 A870 -40 to 125 -40 to 150 FR70J(R)02 VR = 100 V, Tj = 25 °C IF = 70 A, Tj = 25 °C TC ≤ 100 °C Conditions 870 870TC = 25 °C, tp = 8.3 ms Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM Reverse current IR VF www.genesicsemi.com 1
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