FR301G HDSEMI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o 3.0A
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode FR30XG X:From 1 to 7 DO-2 DO-27 Plastic-Encapsulate Diodes Fast Recovery Rectifier FR301G THRU FR307G Glass passivated chip ● Item Symbol Unit Test Condition FR30 1G 2G 3G 4G 5G 6G 7G Peak Forward Voltage VFM V IFM=3.0A 1.3 Peak Reverse Current IRRM1 ¦ÌA VRM=VRRM Ta=25 2.5 IRRM2 Ta=125 100 Reverse Recovery time trr ns IF=0.5A IR=1A IRR=0.25A 150 250 500 Thermal Resistance(Typical) R¦ÈJ-A Between junction and ambient 30 Typical junction capacitance Cj pF Measured at 1MHZ and Applied Reverse Voltage of 4.0 V.D.C. 55 Electrical Characteristics (Ta=25℃ Unless otherwise specified) Item Symbol Unit Conditions FR30 1G 2G 3G 4G 5G 6G 7G Repetitive Peak Reverse Voltage V RRM V 50 100 200 400 600 800 1000 Average Forward Current I F(AV) A 60Hz Half-sine wave, Resistance load, Ta=75℃ 3.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 150 Junction Temperature T J -55~+150 Storage Temperature T STG ℃ -55 ~ +150 35 70 140 280 420 560 700 Maximum RMS V RMS V Voltage
H igh Diode Semiconductor IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25℃ Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 100 FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25℃ Tj=125℃ Tj=100℃ 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1 2 10 20 100 110 140 170 200 1 .5 2 .2 5 50 1 0 0 150 FIG.1 FORWARD CURRENT DERATING CURVE IO(A) S ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length Ta( ℃ ) 100 0 .7 5 3 .0 V R D R L I F IF I R I RR t t rr I FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
H igh Diode Semiconductor DO-2 Unit: in inches (millimeters) MIN 0.96(24.5) MIN 0.96(24.5)
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers