FQU2N60CTU

2 manufacturer specifications

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially t…

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Selected specification: Fairchild Semiconductor

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Fairchild Semiconductor FQU2N60CTU overview.

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Summary

Low Gate Charge (Typ. 8.5 nC)

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Source title FQU2N60CTU Datasheet(PDF) - Fairchild Semiconductor

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