FQI11N40C integrated circuit reference

IC

FQI11N40C

Fairchild Semiconductor

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail…

Manufacturer variants
1
Selected specification
Fairchild Semiconductor
Documents
1

Manufacturer Specifications

Compare FQI11N40C variants.

Select a manufacturer to view its specifications, local PDF, and searchable HTML text.

1 manufacturers / 1 documents
Manufacturer Series Package Documents Available Select specification
Fairchild Semiconductor - - 1 PDF HTML Viewing

Selected Specification

Fairchild Semiconductor FQI11N40C overview.

Summary

400V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Source title FQI11N40C Datasheet(PDF) - Fairchild Semiconductor