FQB19N20LTM

Fairchild Semiconductor

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially t…

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Selected specification: Fairchild Semiconductor

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Fairchild Semiconductor FQB19N20LTM overview.

Summary

N-Channel QFET짰 MOSFET 200 V, 21 A, 140 m廓

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Source title FQB19N20LTM Datasheet(PDF) - Fairchild Semiconductor

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