FQB11P06TM

Fairchild Semiconductor

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially…

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Fairchild Semiconductor FQB11P06TM overview.

Summary

P-Channel QFET MOSFET -60 V, -11.4 A, 175 m廓

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies,

Source title FQB11P06TM Datasheet(PDF) - Fairchild Semiconductor

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