FP2189 ETC

Document overview

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Technical content

This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com May 2002 The Communications Edge TM Preliminary Product Information FP2189

1 Watt HFET

  • 50 – 4000 MHz
  • Up to +31 dBm P1dB
  • Up to +45 dBm Output IP3
  • High Drain Efficiency
  • 19 dB Gain @ 900 MHz
  • MTBF >100 Years
  • SOT-89 SMT Package Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface- mount package. This device works optimally at a drai n bias of +8 V and 250 mA to achieve +45 dBm output IP3 performance and an output power of +31 dBm a t 1-dB compression. The device conforms to WJ Communications’ long history of producing high reliability and qualit y components. The FP2189 has an associated MTBF o f greater than 100 years at a mounting temperature o f 85°C. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers fo r wireless infrastructure where high performance and high efficiency are required. Functional Diagram 1 3 2 Function Pin No. Input 1 Ground 2 Output/Bias 3 Ground 4 Specifications Saturated Drain Current1, Idss mA 500 Transconductance, Gm mS 350 Pinch Off Voltage2, Vp V -2.0 Parameters3 Units Min Typ Max Frequency Range MHz 50 4000 Small Signal Gain, Gss dB 15 Output P1dB dBm +31 Output IP34 dBm +45 Thermal Resistance °C/W 30 1. Idss is measured with Vgs = 0 V, Vds = 3 V. 2. Pinch-off voltage is measured when Ids = 0.4 mA. 3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 250 mA, frequency = 900 MHz in an application circuit with ZL = ZLOPT, ZS = ZSOPT . 4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to +85 °C Storage Temperature -40 to +125 °C Maximum DC Power 4.0 W RF Input Power (continuous) +20 dBm Operation of this device above any of there parameters may cause permanent damage Typical Parameters5 Parameter Units Typical Frequency MHz 915 1960 2140 S21 dB 19.1 15.2 13.8 S11 dB -17 -16 -23 S22 dB -10 -8 -9 Output P1dB dBm +30.3 +30.8 +31.4 Output IP3 dBm +44.3 +44.2 +45.5 Noise Figure dB 4.2 3.5 4.5 Vdd V +8 +8 +8 Idq 6 mA 250 250 250 Idd at P1dB mA 260 330 320 5. Typical parameters represent performance in an application circuit. 6. I dq is the quiescent drain current at small signal output levels. The current may increase as the output power is increased near its compression point.

Ordering Information

Part No. Description FP2189 1-Watt HFET (Available in Tape & Reel) FP2189-PCB900S 900 MHz Application Circuit FP2189-PCB1900S 1900 MHz Application Circuit FP2189-PCB2140S 2140 MHz Application Circuit

This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com May 2002 The Communications Edge TM Preliminary Product Information FP2189 S-Parameters (Vds = 8 V, Ids = 250 mA, 25°C, Unmatched 50 ohm system) Note: Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters that are shown are the de-embedded data down to the device leads and represents typical performance of the device. S22 vs Frequency

1 GHz

2 GHz

3 GHz

4 GHz

5 GHz 6 GHz

5 GHz

6 GHz

Gain, Maximum Stable Gain vs Frequency S21 Gmsg

This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com May 2002 The Communications Edge TM Preliminary Product Information FP2189 Application Circuit: 870 – 960 MHz Typical Specifications Frequency 870 915 960 S21 - Gain 19.1 19.1 19.1 S11 - Input R.L. -12 -17 -25 S22 - Output R.L. -9 -10 -12 Output P1dB +30.4 +30.3 +30.2 Output IP3 +44.4 +44.3 +44.3 Noise Figure 4.2 4.2 4.2 Vdd + 8 V Idq 1 250 mA 1 Idq is the quiescent current at small signal output levels. The current typically increases up to 260 mA at the 1-dB compression point. S-Parameters vs Frequency -30 -20 -10 800 850 900 950 1000 Frequency (MHz) S11, S22, S12 (dB) S21 (dB) S21 S11 S22 Vdd + 8 V @ 250 mA RF OUT RF IN 100 pF -Vgg FP2189 Sot-89 PIN 1 PIN 3 PIN 2,4 Z2 Z3 Z4 Z5 Z6 Z7 C14 4.7 pF 5.6 nH 18 nH 100 Ω 100 pF 1000 pF 10 Ω 5.6 nH 3 pF 100 pF 82 nH 100 pF 1000 pF C12 0.1 µF Ref. Designator Length on .014” GETEKTM (mil) Electrical length @

900 MHz (deg)

Z1 30 1.45 Z2 30 1.45 Z3 135 6.5 Z4 50 2.4 Z5 50 2.4 Z6 42 2.0 Z7 65 3.1 The lengths are measured from the component edge-to-edge. All microstrip lines have a line impedance of 50 Ω. Ref. Designator Value Part style Size C1, C3, C7, C9 100 pF 5% 50V, NPO/COG 0603 C4, C8 1000 pF 5%, 50V, NPO/COG 0603 C5 3 pF AVX 06031J3R0BAWTR 0603 C11 0.1 µF 10%, 50V, X7R 1206 C14 4.7 pF AVX 06035J4R7APWTR 0603 R1 100 Ω 1/16 W, 5% 0603 R2 10 Ω 1/16 W, 5% 0603 L1 18 nH TOKO LL1608-FH18NJ 0603 L2, L4 5.6 nH TOKO LL1608-FH5N6S 0603 L3 82 nH TOKO LL1608-FH82NJ 0603 All other parts are No Loads. Total unique parts count: 10 14 mil GETEKTM ML200DSS (εr = 4.2) The layout of this circuit can be downloaded from the website.

This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com May 2002 The Communications Edge TM Preliminary Product Information FP2189 Application Circuit: 1930 – 1990 MHz Typical Specifications Frequency 1930 1960 1990 S21 - Gain 15.3 15.2 15.0 S11 - Input R.L. -14 -16 -19 S22 - Output R.L. -8 -8 -9 Output P1dB +30.8 +30.8 +30.7 Output IP3 +44 +44.2 +44.3 Noise Figure 3.6 3.5 3.5 Vdd + 8 V Idq 1 250 mA 1 Idq is the quiescent current at small signal output levels. The current typically increases up to 330 mA at the 1-dB compression point. S-Parameters vs Frequency -30 -20 -10 1800 1850 1900 1950 2000 2050 2100 Frequency (MHz) S11, S22, S12 (dB) S21 (dB) S21 S11 S22 Ref. Designator Length on .014” GETEKTM (mil) Electrical length @

1900 MHz (deg)

Z1 30 3.1 Z2 145 14.8 Z3 50 5.1 Z4 255 26.1 The lengths are measured from the component edge-to-edge. All microstrip lines have a line impedance of 50 Ω. Ref. Designator Value Part style Size C1, C3, C6, C9 33 pF 5% 50V, NPO/COG 0603 C2, C13 2.4 pF AVX 06035J2R4AAWTR 0603 C4, C7 1000 pF 5% 50V, NPO/COG 0603 C5 1.5 pF AVX 06035J1R5AAWTR 0603 C8 0.1 µF 10%, 50V, X7R 1206 R1 20 Ω 1/16 W, 5% 0603 R2 5.1 Ω 1/16 W, 5% 0603 L1 10 nH TOKO LL1608-FH10NJ 0603 L2 22 nH TOKO LL1608-FH22NJ 0603 All other parts are No Loads. Total unique parts count: 9 14 mil GETEKTM ML200DSS (εr = 4.2) The layout of this circuit can be downloaded from the website. Vdd + 8 V @ 250 mA RF OUT RF IN 33 pF -Vgg FP2189 Sot-89 PIN 1 PIN 3 PIN 2,4 Z2 Z3 C13 2.4 pF 10 nH 20 Ω 33 pF 1000 pF 5.1 Ω 1.5 pF 33 pF 22 nH 1000 pF 33 pF 0.1 µF 2.4 pF

This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com May 2002 The Communications Edge TM Preliminary Product Information FP2189 Application Circuit: 2110 – 2170 MHz Typical Specifications Frequency 2110 2140 2170 S21 - Gain 13.9 13.8 13.7 S11 - Input R.L. -27 -23 -20 S22 - Output R.L. -8 -9 -10 Output P1dB +31.4 +31.4 +31.4 Output IP3 +44.5 +45.5 +43.2 Noise Figure 4.5 4.5 4.5 Vdd + 8 V Idq 1 250 mA 1 Idq is the quiescent current at small signal output levels. The current typically increases up to 320 mA at the 1-dB compression point. S-Parameters vs Frequency -30 -20 -10 2000 2050 2100 2150 2200 2250 2300 Frequency (MHz) S11, S22, S12 (dB) S21 (dB) S21 S11 S22 14 mil GETEKTM ML200DSS (εr = 4.2) The layout of this circuit can be downloaded from the website. Ref. Designator Length on .014” GETEKTM (mil) Electrical length @

2140 MHz (deg)

Z1 150 17.3 Z2 15 1.7 Z3 100 11.5 Z4 50 5.8 Z5 225 25.9 The lengths are measured from the component edge-to-edge. All microstrip lines have a line impedance of 50 Ω. Ref. Designator Value Part style Size C1 1.8 pF AVX 06035J1R8AAWTR 0603 C3, C7, C9 22 pF 5% 50V, NPO/COG 0603 C4 1.5 pF AVX 06035J1R5AAWTR 0603 C5 1.2 pF AVX 06035J1R2AAWTR 0603 C6 1000 pF 5% 50V, NPO/COG 0603 C8 0.1 µF 10%, 50V, X7R 1206 R1 10 Ω 1/16 W, 5% 0603 R2 6.2 Ω 1/16 W, 5% 0603 L1 18 nH TOKO LL1608-FH18NJ 0603 L2 5.6 nH TOKO LL1608-FH5N6S 0603 All other parts are No Loads. Total unique parts count: 10 C3 is of size 0805 on the app board so that it would fit in the 1206 pad. Vdd + 8 V @ 250 mA RF OUT RF IN 1.8 pF -Vgg FP2189 Sot-89 PIN 1 PIN 3 PIN 2,4 Z2 Z4 1.5 pF 5.6 nH 10 Ω 22 pF 5.1 Ω 1.2 pF 22 pF 18 nH 22 pF 1000 pF 0.1 µF

This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com May 2002 The Communications Edge TM Preliminary Product Information FP2189 Outline Drawing Land Pattern Mounting Configuration 8.2 kΩ Vdd = +8 V Vgg = -4 V UMT1N Connected to Vdd on App Circuit Connected to Vgg on App Circuit 8.2 kΩ 220 Ω 1 Ω 0805 Application Note Special attention should be taken to properly bias the FP2189. Power supply sequencing is required to prevent the device from operating at 100% I dss for a prolonged period o f time and possibly causing damage to the device. It is recommended that for the safest operation, the negative supply be “first on and last off.” With a negative gate voltage present, the drain voltage can then be applied to the device. The gate voltage can then be adjusted to have the device be used at the proper quiescent bias condition. An optional temperature-compensation active-bias circuit is recommended for use wit h the application circuit, which requires two standard voltage supplies +8V and -4V, an d is set for an optimal drain bias of +8V @ 250 mA. The circuit schematic, shown on the right, uses dual PNP transistors to provide a constant drain current into the FP2189 an d also eliminates the effects of pinchoff variation. Temperature compensation is achieved by tracking the voltage variation with the temperature of the emitter-to-base junction o f the PNP transistors. Thus the transistor emitter voltage adjusts the voltage incident at the gate of the FP2189 so that the device draws a constant current, regardless of the temperature. Two fixed voltage supplies are needed for operation. A Rohm dual transistor, UMT1N, and a dual-chip resistor (8.2 k Ω) are recommended to minimize board space and help decrease the current variability through R4 with the components being matched to one another. The active-bias circuit can directly be attached to the voltage supply ports in the circuit diagram as shown above (V dd and Vgg).