FMH23N50E ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor FMH23N50E
- FEATURES
- WithTO-3PNpackaging
- Highspeed switching
- Standardlevelgate drive
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Powersupply
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 500 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous 23 A IDM DrainCurrent-SinglePulsed 92 A PD TotalDissipation 315 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.4 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor FMH23N50E ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.25mA 500 V VGS(off) GateThresholdVoltage VDS=10V;ID=0.25mA 2.5 3.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=11.5A 210 245 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±30V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=500V;VGS=0; 25 μA VSDF Diodeforwardvoltage ISD=23A;VGS =0V 1.35 V