FL12KM-12A RENESAS

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Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 To all our customers

Sep. 2001 FL12KM-12A OUTLINE DRAWING Dimensions in mm TO-220FN MITSUBISHI Nch POWER MOSFET FL12KM-12A HIGH-SPEED SWITCHING USE APPLICATION SMPS, Inverter fluorescent light sets, etc. 600 ±30 –55 ~ +150 –55 ~ +150 2000 2.0 V GS = 0V VDS = 0V L = 200µH AC for 1minute, Terminal to case Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight V V A A A W V g VDSS VGSS ID IDM IDA PD Tch Tstg Viso Symbol MAXIMUM RATINGS (Tc = 25°C) Parameter Conditions Ratings Unit G 10V DRIVE ➀ GATE ➁ DRAIN ➂ SOURCE 15 ± 0.3 14 ± 0.5 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 2.6 ± 0.2 4.5 ± 0.2 0.75 ± 0.15 3 ± 0.3 3.6 ± 0.3 6.5 ± 0.3 ➀➁➂

Sep. 2001 MITSUBISHI Nch POWER MOSFET FL12KM-12A HIGH-SPEED SWITCHING USE PERFORMANCE CURVES V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W 600 ±30 2.0 3.0 0.80 4.80 8.0 1250 150 250 1.5 ±10 4.0 0.94 5.64 2.0 3.13 ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol UnitParameter Test conditions Limits Min. Typ. Max. I D = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V , VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V , ID = 6A, VGS = 10V, RGEN = RGS = 50Ω IS = 6A, VGS = 0V Channel to case POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) POWER DISSIPATION PD (W) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE VOLTAGE VDS (V) 0 200 50 100 150 0 4 8 1 21 62 0 VGS = 20V TC = 25°C Pulse Test 10V 02468 1 0 VGS = 20V 10V TC = 25°C Pulse Test 10–1 100 101 3 10157 2 10235 7 2 10335 7 2 3 tw = 10µs 10ms 100µs 1ms DC TC = 25°C Single Pulse

Sep. 2001 MITSUBISHI Nch POWER MOSFET FL12KM-12A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TRANSFER CHARACTERISTICS (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) SWITCHING CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN CURRENT ID (A) CAPACITANCE Ciss, Coss, Crss (pF) SWITCHING TIME (ns) 0 4 8 12 16 20 12A 16A TC = 25°C Pulse Test 0.4 0.8 1.2 1.6 2.0 0 10123 5 7 10223 5 7 TC = 25°C Pulse Test VGS = 10V 20V 0 4 8 12 16 20 TC = 25°C VDS = 50V Pulse Test 100 10210123 5 7 23 5 7 10-1 100 101 TC = 25°C 125°C 75°C VDS = 10V Pulse Test 100 10210123 5 7 23 5 7 101 102 103

7 TCh = 25°C

VDD = 200V VGS = 10V RGEN = RGS = 50Ω td(off) td(on) tf tr 101 102 103 104 2 10035 7 2 10135 7 2 10235 7 2 Ciss Coss Crss TCh = 25°C f = 1MHZ VGS = 0V

Sep. 2001 MITSUBISHI Nch POWER MOSFET FL12KM-12A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE CHARGE Qg (nC) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) SOURCE-DRAIN VOLTAGE VSD (V) SOURCE CURRENT IS (A) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) PULSE WIDTH tw (s) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) 0.4 0.6 0.8 1.0 1.2 1.4 –50 0 50 100 150 VGS = 0V ID = 1mA 1.0 2.0 3.0 4.0 5.0 –50 0 50 100 150 VDS = 10V ID = 1mA 0 2 04 06 08 0 1 0 0 VDS = 100V 400V 200V TCh = 25°C ID = 12A 10–1 100 101 –50 0 50 100 150 VGS = 10V ID = 6A Pulse Test TC = 25°C 75°C 125°C VGS = 0V Pulse Test 10–2 10–1 100 101 10–423 57 23 57 23 57 23 57 100 23 57 101 23 57 10210–3 10–2 10–1 PDM tw D= T tw T D = 1.0 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse