FCPF125N65S3 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscN-ChannelMOSFETTransistor FCPF125N65S3
- FEATURES
- WithTo-220F package
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 650 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous@TC=25℃ TC=100℃ 15 A IDM DrainCurrent-SinglePulsed 60 A PD TotalDissipation@TC=25℃ 38 W Tch Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 3.24 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscN-ChannelMOSFETTransistor FCPF125N65S3 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 650 V VGS(th) GateThresholdVoltage VDS= ±30V;ID=2.4mA 2.5 4.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=12A 105 125 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±30V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakage Current VDS=650V;VGS=0V 1 μA VSDF Diodeforwardvoltage ISD=12A,VGS =0V 1.2 V