FCP36N60N ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor FCP36N60N
- FEATURES
- WithTO-220 packaging
- Highspeed switching
- Veryhigh commutation ruggedness
- Easytouse
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operationz
- APPLICATIONS
- PFCstages
- LCD&PDPTV
- Powersupply
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGSS Gate-SourceVoltage ±30 V ID DrainCurrent-Continuous@Tc=25℃ Tc=100℃ 22.7 A IDM DrainCurrent-SinglePulsed 108 A PD TotalDissipation 312 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.4 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 62.5 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-Channel MOSFETTransistor FCP36N60N ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 600 V VGS(th) GateThresholdVoltage VDS=10V;ID=0.25mA 2.0 4.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=18A 81 90 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±30V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=480V;VGS=0V;Tj=25℃ VDS=480V;VGS=0V;Tj=125℃ 100 μA VSDF Diodeforwardvoltage ISD=18A,VGS =0V 1.2 V