FCH041N60F ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscN-ChannelMOSFETTransistor FCH041N60F
- FEATURES
- WithTO-247 packaging
- Withlowgatedrive requirements
- Easytodrive
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 600 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous@Tc=25℃ Tc=100℃ 48.1 A IDM DrainCurrent-SinglePulsed 228 A PD TotalDissipation 595 W Tj OperatingJunctionTemperature -55~150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 0.21 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscN-ChannelMOSFETTransistor FCH041N60F ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=10mA 600 V VGS(th) GateThresholdVoltage VDS=VGS;ID=0.25mA 3.0 5.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=38A 36 41 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakageCurrent VDS=480V;VGS=0V;@Tc=25℃ VDS=480V;VGS=0V;Tc=125℃ 10 μA VSDF Diodeforwardvoltage ISD=38A,VGS =0V 1.2 V