FCA75CC50 ETC

Document overview

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Technical content

UL;E76102 M Unit A Maximum Ratings Tj 25 Electrical Characteristics Tj 25 Symbol Item Conditions Ratings FCA75CC50 Unit VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage 20 V ID Drain Current DC Pulse Duty 35% 75 AIDP 150 Is Source Current 75 A PT Total Power Dissipation Tc 25 430 W Tj Channel Temperature 40 150 Tstg Storage Temperature 40 125 Mounting Torque Mounting M6 Terminal M5 Recommended Value 2.5 3.9 25 40 4.7 48 N m kgf BRecommended Value 1.5 2.5 15 25 2.7 28 Mass Typical Value 240 g Symbol Item Conditions Ratings Min. Typ. Max. 1.0 Unit IGSS Gate Leakage Current VGS 20V VDS 0V A 1.0IDSS Zero Gate Voltage Drain Current VGS 0V VDS 500V mA 500V BR DSS Darin-Source Breakdown Voltage VGS 0V ID 1mA V 1.0 5.0VGS th Gate-Source Threshold Voltage VDS VGS ID 10mA V 140RDS on Drain-Source On-State Resistance ID 40A VGS 15V m 3.5VDS on Drain-Source On-State Voltage ID 40A VGS 15V V 40gfs Forward Transconductance VDS 10V ID 40A S 13500Ciss Input Capacitance VGS 0V VDS 25V f 1.0MHz pF 2500Coss Output Capacitance VGS 0V VDS 25V f 1.0MHz pF 1000Crss Reverse Transfer Capacitance VGS 0V VDS 25V f 1.0MHz pF tr Switching Time Rise Time Turn-on Delay Time Fall Time Turn-off Delay Time VDD 300V VGS 15V ID 40A RG 5 ns60 td on 650 tf 130 td off 2.5VSDS Diode Forward Voltage IS 40A VGS 0V V 80 100trr Reverse Recovery Time IS 40A VGS 5V di/dt 100A/ s ns 0.29 1.67Rth j-c Thermal Resistance MOSFET Diode /W FCA75CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. 2 devices are serial connected.The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ID 75A, VDSS 500V Suitable for high speed switching applications. Low ON resistance. Wide Safe Operating Areas. trr 100ns

Applications

UPS CVCF , Motor Control, Switching Power Supply, etc.