FBAT54ADW JIANGSU

Document overview

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Technical content

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diodes FBAT54ADW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS

DESCRIPTION

PN Junction Guard Ring for Schottky Diode

FEATURES

z Low Forward Voltage Drop z Fast Switching APPLICATION Ultra high speed switching, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit Peak Repetitive reverse voltage DC Blocking Voltage VRM VR V Average Rectified Output Current IO 100 mA Power Dissipation PD 150 mW Junction temperature TJ 125 Storage temperature range TSTG -65-125 ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) IR= 100μA V Reverse voltage leakage current IR VR=25V uA Forward voltage VF IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA 240 320 400 500 1000 mV Total capacitance CT VR=1V,f=1MHz pF Reverse recovery time t r r IF=10mA, IR=10mA~1mA RL=100Ω nS WBFBP-06C (2×2×0.5) unit: mm FBAT54ADW Marking:KL6

Min. Max. Min. Max. A 0.450 0.550 0.018 0.022 0.000 0.100 0.000 0.004 b 0.150 0.250 0.006 0.010 D 1.900 2.100 0.075 0.083 E 1.900 2.100 0.075 0.083 e L k z 0.500 REF. 0.020 REF. 0.300 REF. 0.012 REF. 0.500 REF. 0.020 REF. Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP. 0.026 TYP. 0.420 REF. 0.017 REF. 0.420 REF. 0.017 REF.