FBAS40BRW JIANGSU
Document overview
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Technical content
(2×2×0.5) unit: mm JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
PN Junction Guard Ring for Schottky Diode
FEATURES
z Low Forward Voltage Drop z Fast Switching z Ultra-Small Surface Mount Package APPLICATION For General Purpose Switching Applications, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) Maximum Ratings @TA=25℃ Parameter Symbol Limits Unit Peak Repetitive reverse voltage DC Blocking Voltage VRM VR V Average Rectified Output Current IO mA Power Dissipation Pd 150 mW Thermal Resistance. Junction to Ambient Air RθJA 625 ℃/W Junction temperature TJ 125 Storage temperature range TSTG -65-125 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Reverse voltage leakage current IR VR=30V 200 nA Forward voltage VF IF=1mA IF=40mA 380 1000 mV Total capacitance CT VR=0,f=1MHz pF Reverse recovery time t r r IF= IR=10mA,Irr=0.1×IR, RL=100Ω nS FBAS40BRW Marking:K47
Min. Max. Min. Max. A 0.450 0.550 0.018 0.022 0.000 0.100 0.000 0.004 b 0.150 0.250 0.006 0.010 D 1.900 2.100 0.075 0.083 E 1.900 2.100 0.075 0.083 e L k z 0.420 REF. 0.400 REF. 0.016 REF. 0.300 REF. 0.012 REF. 0.017 REF. 0.500 REF. 0.020 REF. Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP. 0.026 TYP. 0.420 REF. 0.017 REF.