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F1100 RENESAS

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RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 1 RevO, Feb 2013 F1100 DATASHEET G ENERAL D ESCRIPTION This document describes the specifications for the I DTF1100 Zero9DistortionTM RF to IF Downconverting M ixer. This device is part of a series of downconverting mixers covering all UTRA bands. See the Part# Matrix for the details of all devices in the series. The F1100 dual channel device operates with a single 5V supply. It is optimized for operation in a Multi9 carrier BaseStation Receiver for RF bands from 698 to 915 MHz with High Side Injection. IF frequencies from 150 to 450 MHz are supported. Nominally, the device offers +41 dBm Output IP3 with 350 mA of ICC. COMPETITIVE A DVANTAGE In typical basestation receivers the mixer limits the l inearity performance for the entire receive system. The F1100 with Zero9Distortion technology dramatically improves the maximum IM3 interference that the BTS c an withstand at a desired Signal to Noise Ratio (SNR.) /checkbld IP3O: ⇑⇑ ⇑⇑ 7 dB /checkbld Allows for higher RF gain improving Sensitivity PART# MATRIX Part# RF freq r ange UTRA bands IF freq range Typ. Gain Injection FF11110000 669988 -- 991155 55 ,,66,,88,,1122,,1133,,1144 ,,1177 ,,1199,,2200 1155 00 -- 44 55 00 99 HH iigghh SSiiddee F1102 400 - 1000 5,6,8,12,13,14,17 ,19,20 50 - 300 9.0 Both F1150 1700 - 2200 1,2,3,4,9,10, 33, 34,35, 36, 37,39 50 - 450 8.5 High Side F1152 1400 - 2200 1,2,3,4,9,10, 211, 24 1, 33, 34,35, 36, 37,39 50 - 350 8.5 Low Side F1162 2300 – 2700 7,38,40,41 50 – 500 8.8 Both – with High side injection

FEATURES

D ual Path for Diversity Systems
Ideal for Multi9Carrier Systems
MIMO friendly: 96 dBm min LO drive
9 dB Gain
Ultra linear: +41 dBm IP3O (350 MHz IF)
• Low NF ~10 dB
20 0 Ω output impedance
Ultra high +13 dBm P1dBI
PPiinn CCoommppaattiibbllee ww//EExxiissttiinngg ssoolluuttiioonnss
6x6 36 pin package
PPoowweerr DDoowwnn mmooddee
Standard Mode: ICC = 350 mA D EVICE BLOCK DIAGRAM

ORDERING INFORMATION

RFIN_A IFOUT_A RF VCO LOADJ RFIN_B IFOUT_B Bias Control STBY IDTF1100NBGI8 0.8 mm height package Green Industrial Temp range Tape & Reel Omit IDT prefix RF product Line

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 2 RevO, Feb 2013 F1100 DATASHEET A BSOLUTE MAXIMUM RATINGS VCC to GND 90.3V to +5.5V STBY 90.3V to (VCC_ + 0.3V) IF_A+, IF_B+, IF_A9, IF_B9, LO1_ADJ, LO2_ADJ 90.3V to (VCC_ + 0.3V) LO_IN, LO_IN_ALT, RF_A, RF_B 90.3V to +0.3V IF_BiasA, IF_BiasB to GND 90.3V to +0.3V RF Input Power (RF_A, RF_B) +20dBm Continuous Power Dissipation 2.2W θJA (Junction – Ambient) +35°C/W θJC (Junction – Case) The Case is defined as the exposed paddle +2.5°C/W Operating Temperature Range (Case Temperature) TC = 940°C to +100°C Maximum Junction Temperature 150°C Storage Temperature Range 965°C to +150°C Lead Temperature (soldering, 10s) . +260°C Stresses above those listed above may cause permanen t damage to the device. Functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 3 RevO, Feb 2013 F1100 DATASHEET I DTF1100 SPECIFICATION (698 – 915 MH Z MIXER W/H IGH SIDE INJECTION) S pecifications apply at VCC = +5.0V, FRF = 850 MHz , FIF = 350MHz , HibSide Inj., PLO = 0 dBm, TCASE = +25°C, STBY = GND, Trace and Transformer Losses debembedded unless otherwise noted. Parameter Comment Symbol min typ max units Logic Input High For Standby Pin VIH 2 V Logic Input Low For Standby Pin VIL 0 .8 V Logic Current For Standby Pin IIH, IIL -5 +5 µA Supply Voltage(s) All V CC pins VCC 4 .75 to 5.25 V Operating Temperature Case Temperature T CASE b 40 to +100 degC Supply Current Total V CC Both Channels I STD 350 395 mA Supply Current Standby Mode /square4STBY = VIH /square4Total Both Channels ISTBY 2 8 35 mA RF Freq Range Operating Range FRF 6 98 to

915 MHz

IF Freq Range Operating Range FIF 1 50 to

450 MHz

LO Freq Range Operating Range FLO 8 48 to

1365 MHz

LO Power Operating Range PLO b6 to +6 dBm RF Input Impedance Single Ended Return Loss > 15 dB ZRF 50 Ω IF Output Impedance Differential Return Loss > 15 dB ZIF 200 Ω LO port Impedance Single Ended Return Loss > 15 dB ZLO 50 Ω Gain (low freq) Conversion Gain

FRF = 698 MHz
FIF = 450 MHz
EVB trace and transformer loss = 0.9 dB G1 7.8 8.9 10 dB Gain (high freq) Conversion Gain
FRF = 915 MHz
FIF = 350 MHz
EVB trace and transformer loss = 0.8 dB G2 8.0 9.0 10 dB

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 4 RevO, Feb 2013 F1100 DATASHEET I DTF1100 SPECIFICATION (CONTINUED) Parameter Comment Symbol min typ max units Noise Figure • FRF = 850 MHz

FIF = 350 MHz NFSTD 10 dB NF w/Blocker /square450 MHz offset blocker /square4PIN = +10 dBm /square4FIF = 350 MHz /square4FRF = 900 MHz NFBLK 20.3 dB Output IP3 – Narrowband /square4PIN = b10 dBm per tone /square4800 KHz Tone Separation /square4FIF = 350 MHz /square4FRF = 850 MHz IP3O1 38 41 dBm Output IP3 – Wideband /square4PIN = b10 dBm per tone /square415 MHz Tone Separation /square4FIF = 350 MHz IP3O2 41 dBm 2RF X 2LO rejection /square4PRF = b10 dBm /square4FIF = 350 MHz /square4FLO = 1200 MHz /square4FSPUR = FLO b ½ FIF 2x2 b80 dBc 3RF X 3LO rejection /square4PRF = b10 dBm /square4FIF = 350 MHz /square4FLO = 1200 MHz /square4FSPUR = FLO – 1/3 FIF 3x3 b82 dBc 1 dB Compression /square4Input referred /square4FIF = 350 MHz P1dBI 12.4 13.1 dBm Channel Isolation IF_B Pout vs. IF_A w/ RF_A input ISOC 60 dB LO to IF leakage ISOLI b19 b13 dBm RF to IF leakage Pin = b10 dBm ISORI b39 b33 dBm LO to RF leakage ISOLR b40 dBm 1 – Items in min/max columns in bold italics are Guaranteed by Test 2 – All other Items in min/max columns are Guaranteed by Design Centering TYPICAL OPERATING CONDITIONS Unless Otherwise Noted:
Dotted Lines: 450 MHz IF / Solid Lines: 350 MHz IF
High Side Injection
800 KHz Channel Spacing
Average of ChA, ChB
Pin = -10 dBm
Trace & Transformer Losses de-embedded

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 5 RevO, Feb 2013 F1100 DATASHEET TYPICAL OPERATING CONDITIONS (-1-) G ain vs. TCASE Gain vs. LO Level O utput IP3 vs. VCC G ain vs. VCC Output IP3 vs. TCASE Output IP3 vs. LO Level 650 700 750 800 850 900 950 Gain (dB) RF Freq (MHz) -40 degC / 5.00 V / 0 dBm / 350 MHz -40 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 100 degC / 5.00 V / 0 dBm / 350 MHz100 degC / 5.00 V / 0 dBm / 450 MHz 650 700 750 800 850 900 950 Gain (dB) RF Freq (MHz) 25 degC / 5.00 V / 6 dBm / 350 MHz 25 degC / 5.00 V / 6 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / -3 dBm / 350 MHz 25 degC / 5.00 V / -3 dBm / 450 MHz 650 700 750 800 850 900 950 Output IP3 (dBm) RF Freq (MHz) 25 degC / 5.25 V / 0 dBm / 350 MHz 25 degC / 5.25 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 4.75 V / 0 dBm / 350 MHz 25 degC / 4.75 V / 0 dBm / 450 MHz 650 700 750 800 850 900 950 Gain (dB) RF Freq (MHz) 25 degC / 5.25 V / 0 dBm / 350 MHz 25 degC / 5.25 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 4.75 V / 0 dBm / 350 MHz 25 degC / 4.75 V / 0 dBm / 450 MHz 650 700 750 800 850 900 950 Output IP3 (dBm) RF Freq (MHz) -40 degC / 5.00 V / 0 dBm / 350 MHz-40 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz25 degC / 5.00 V / 0 dBm / 450 MHz 100 degC / 5.00 V / 0 dBm / 350 MHz100 degC / 5.00 V / 0 dBm / 450 MHz 650 700 750 800 850 900 950 Output IP3 (dBm) RF Freq (MHz) 25 degC / 5.00 V / 6 dBm / 350 MHz 25 degC / 5.00 V / 6 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / -3 dBm / 350 MHz25 degC / 5.00 V / -3 dBm / 450 MHz

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 6 RevO, Feb 2013 F1100 DATASHEET TYPICAL OPERATING CONDITIONS (-2-) P 1dB vs. TCASE P1dB vs. LO Level RF x 2LO Rejection vs. VCC P 1dB vs. VCC 2RF x 2LO rejection vs. TCASE 2RF x 2LO Rejection vs. LO Level 650 700 750 800 850 900 950 Input P1dB (dBm) RF Freq (MHz) -40 degC / 5.00 V / 0 dBm / 350 MHz -40 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 100 degC / 5.00 V / 0 dBm / 350 MHz100 degC / 5.00 V / 0 dBm / 450 MHz 650 700 750 800 850 900 950 Input P1dB (dBm) RF Freq (MHz) 25 degC / 5.00 V / 6 dBm / 350 MHz 25 degC / 5.00 V / 6 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / -3 dBm / 350 MHz 25 degC / 5.00 V / -3 dBm / 450 MHz -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 650 700 750 800 850 900 950 2 x 2 Rejection (dBc) RF Freq (MHz) 25 degC / 5.25 V / 0 dBm / 350 MHz 25 degC / 5.25 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 4.75 V / 0 dBm / 350 MHz 25 degC / 4.75 V / 0 dBm / 450 MHz PIN= -10 dBm 650 700 750 800 850 900 950 Input P1dB (dBm) RF Freq (MHz) 25 degC / 5.25 V / 0 dBm / 350 MHz 25 degC / 5.25 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 4.75 V / 0 dBm / 350 MHz 25 degC / 4.75 V / 0 dBm / 450 MHz -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 650 700 750 800 850 900 950 2 x 2 Rejection (dBc) RF Freq (MHz) -40 degC / 5.00 V / 0 dBm / 350 MHz -40 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 100 degC / 5.00 V / 0 dBm / 350 MHz100 degC / 5.00 V / 0 dBm / 450 MHz PIN= -10 dBm -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 650 700 750 800 850 900 950 2 x 2 Rejection (dBc) RF Freq (MHz) 25 degC / 5.00 V / 6 dBm / 350 MHz 25 degC / 5.00 V / 6 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / -3 dBm / 350 MHz 25 degC / 5.00 V / -3 dBm / 450 MHz PIN= -10 dBm

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 7 RevO, Feb 2013 F1100 DATASHEET TYPICAL OPERATING CONDITIONS (-3-) ICC vs. TCASE ICC vs. LO Level LO-IF Leakage vs. VCC ICC vs. VCC LO-IF Leakage vs. TCASE LO-IF Leakage vs. LO Level 0.310 0.320 0.330 0.340 0.350 0.360 0.370 0.380 0.390 650 700 750 800 850 900 950 Total ICC (Amps) RF Freq (MHz) -40 degC / 5.00 V / 0 dBm / 350 MHz-40 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz25 degC / 5.00 V / 0 dBm / 450 MHz 100 degC / 5.00 V / 0 dBm / 350 MHz100 degC / 5.00 V / 0 dBm / 450 MHz 0.310 0.320 0.330 0.340 0.350 0.360 0.370 0.380 0.390 650 700 750 800 850 900 950 Total ICC (Amps) RF Freq (MHz) 25 degC / 5.00 V / 6 dBm / 350 MHz25 degC / 5.00 V / 6 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / -3 dBm / 350 MHz25 degC / 5.00 V / -3 dBm / 450 MHz -50 -45 -40 -35 -30 -25 -20 -15 -10 650 700 750 800 850 900 950 LO to IF Leakage (dBm) RF Freq (MHz) 25 degC / 5.25 V / 0 dBm / 350 MHz 25 degC / 5.25 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 4.75 V / 0 dBm / 350 MHz 25 degC / 4.75 V / 0 dBm / 450 MHz 0.310 0.320 0.330 0.340 0.350 0.360 0.370 0.380 0.390 650 700 750 800 850 900 950 Total ICC (Amps) RF Freq (MHz) 25 degC / 5.25 V / 0 dBm / 350 MHz 25 degC / 5.25 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 4.75 V / 0 dBm / 350 MHz 25 degC / 4.75 V / 0 dBm / 450 MHz -50 -45 -40 -35 -30 -25 -20 -15 -10 650 700 750 800 850 900 950 LO to IF Leakage (dBm) RF Freq (MHz) -40 degC / 5.00 V / 0 dBm / 350 MHz -40 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 100 degC / 5.00 V / 0 dBm / 350 MHz100 degC / 5.00 V / 0 dBm / 450 MHz -50 -45 -40 -35 -30 -25 -20 -15 -10 650 700 750 800 850 900 950 LO to IF Leakage (dBm) RF Freq (MHz) 25 degC / 5.00 V / 6 dBm / 350 MHz 25 degC / 5.00 V / 6 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / -3 dBm / 350 MHz 25 degC / 5.00 V / -3 dBm / 450 MHz

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 8 RevO, Feb 2013 F1100 DATASHEET TYPICAL OPERATING CONDITIONS (-4-) R F-IF Leakage vs. TCASE RF-IF Leakage vs. LO Level RF X 3LO Rejection vs. VCC R F-IF Leakage vs. VCC 3RF X 3LO Rejection vs. TCASE 3RF X 3LO Rejection vs. LO Level -50 -45 -40 -35 -30 -25 -20 -15 -10 650 700 750 800 850 900 950 RF to IF Leakage (dBm) RF Freq (MHz) -40 degC / 5.00 V / 0 dBm / 350 MHz -40 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 100 degC / 5.00 V / 0 dBm / 350 MHz100 degC / 5.00 V / 0 dBm / 450 MHz PIN= -10 dBm -50 -45 -40 -35 -30 -25 -20 -15 -10 650 700 750 800 850 900 950 RF to IF Leakage (dBm) RF Freq (MHz) 25 degC / 5.00 V / 6 dBm / 350 MHz 25 degC / 5.00 V / 6 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / -3 dBm / 350 MHz 25 degC / 5.00 V / -3 dBm / 450 MHz PIN= -10 dBm -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 650 700 750 800 850 900 950 3 x 3 Rejection (dBc) RF Freq (MHz) 25 degC / 5.25 V / 0 dBm / 350 MHz 25 degC / 5.25 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 4.75 V / 0 dBm / 350 MHz 25 degC / 4.75 V / 0 dBm / 450 MHz PIN= -10 dBm -50 -45 -40 -35 -30 -25 -20 -15 -10 650 700 750 800 850 900 950 RF to IF Leakage (dBm) RF Freq (MHz) 25 degC / 5.25 V / 0 dBm / 350 MHz 25 degC / 5.25 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 4.75 V / 0 dBm / 350 MHz 25 degC / 4.75 V / 0 dBm / 450 MHz PIN= -10 dBm -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 650 700 750 800 850 900 950 3 x 3 Rejection (dBc) RF Freq (MHz) -40 degC / 5.00 V / 0 dBm / 350 MHz -40 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 100 degC / 5.00 V / 0 dBm / 350 MHz100 degC / 5.00 V / 0 dBm / 450 MHz PIN= -10 dBm -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 650 700 750 800 850 900 950 3 x 3 Rejection (dBc) RF Freq (MHz) 25 degC / 5.00 V / 6 dBm / 350 MHz 25 degC / 5.00 V / 6 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz 25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / -3 dBm / 350 MHz 25 degC / 5.00 V / -3 dBm / 450 MHz PIN= -10 dBm

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 9 RevO, Feb 2013 F1100 DATASHEET TYPICAL OPERATING CONDITIONS (-5-) C hannel Isolation vs. TCASE Channel Isolation vs. LO Level N oise Figure vs. TCASE (450 MHz IF, RF trace de-embedded) C hannel Isolation vs. VCC Noise Figure vs. TCASE (350 MHz IF, RF trace de-embedded) NF vs. Blocker (RF =900 MHz, IF = 350 MHz, TA = 25C) 650 700 750 800 850 900 950 Channel Isolation (dBc) RF Freq (MHz) -40 degC / 5.00 V / 0 dBm / 350 MHz-40 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz25 degC / 5.00 V / 0 dBm / 450 MHz 100 degC / 5.00 V / 0 dBm / 350 MHz100 degC / 5.00 V / 0 dBm / 450 MHz 650 700 750 800 850 900 950 Channel Isolation (dBc) RF Freq (MHz) 25 degC / 5.00 V / 6 dBm / 350 MHz25 degC / 5.00 V / 6 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 5.00 V / -3 dBm / 350 MHz25 degC / 5.00 V / -3 dBm / 450 MHz 700 750 800 855 -40 degC - ChA -40 degC - ChB 25 degC - ChA 25 degC - ChB 100 degC - ChA 100 degC - ChB RF Freq (MHz) Noise Figure (dB) 650 700 750 800 850 900 950 Channel Isolation (dBc) RF Freq (MHz) 25 degC / 5.25 V / 0 dBm / 350 MHz 25 degC / 5.25 V / 0 dBm / 450 MHz 25 degC / 5.00 V / 0 dBm / 350 MHz25 degC / 5.00 V / 0 dBm / 450 MHz 25 degC / 4.75 V / 0 dBm / 350 MHz 25 degC / 4.75 V / 0 dBm / 450 MHz 800 850 900 950 -40 degC - ChA -40 degC - ChB 25 degC - ChA 25 degC - ChB 100 degC - ChA 100 degC - ChB RF Freq (MHz) Noise Figure (dB) -30 -26 -22 -18 -14 -10 -6 -2 2 6 10 Noise Figure (dB) Blocker Level (dBm) ChA ChB

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 10 RevO, Feb 2013 F1100 DATASHEET TYPICAL OPERATING CONDITIONS [Extreme Conditions: low Supply, low LO level 96 dBm] (-6-) G ain 2x2 Rejection I nput P1dB O utput IP3 3x3 Rejection LO to IF Leakage 650 700 750 800 850 900 950 Gain (dB) RF Freq (MHz) -40 degC / 4.75 V / -6 dBm / 350 MHz -40 degC / 4.75 V / -6 dBm / 450 MHz 25 degC / 4.75 V / -6 dBm / 350 MHz 25 degC / 4.75 V / -6 dBm / 450 MHz 100 degC / 4.75 V / -6 dBm / 350 MHz100 degC / 4.75 V / -6 dBm / 450 MHz -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 650 700 750 800 850 900 950 2 x 2 Rejection (dBc) RF Freq (MHz) -40 degC / 4.75 V / -6 dBm / 350 MHz -40 degC / 4.75 V / -6 dBm / 450 MHz 25 degC / 4.75 V / -6 dBm / 350 MHz 25 degC / 4.75 V / -6 dBm / 450 MHz 100 degC / 4.75 V / -6 dBm / 350 MHz100 degC / 4.75 V / -6 dBm / 450 MHz PIN= -10 dBm 650 700 750 800 850 900 950 Input P1dB (dBm) RF Freq (MHz) -40 degC / 4.75 V / -6 dBm / 350 MHz-40 degC / 4.75 V / -6 dBm / 450 MHz 25 degC / 4.75 V / -6 dBm / 350 MHz 25 degC / 4.75 V / -6 dBm / 450 MHz 100 degC / 4.75 V / -6 dBm / 350 MHz100 degC / 4.75 V / -6 dBm / 450 MHz 650 700 750 800 850 900 950 Output IP3 (dBm) RF Freq (MHz) -40 degC / 4.75 V / -6 dBm / 350 MHz -40 degC / 4.75 V / -6 dBm / 450 MHz 25 degC / 4.75 V / -6 dBm / 350 MHz 25 degC / 4.75 V / -6 dBm / 450 MHz 100 degC / 4.75 V / -6 dBm / 350 MHz100 degC / 4.75 V / -6 dBm / 450 MHz -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 650 700 750 800 850 900 950 3 x 3 Rejection (dBc) RF Freq (MHz) -40 degC / 4.75 V / -6 dBm / 350 MHz -40 degC / 4.75 V / -6 dBm / 450 MHz 25 degC / 4.75 V / -6 dBm / 350 MHz 25 degC / 4.75 V / -6 dBm / 450 MHz 100 degC / 4.75 V / -6 dBm / 350 MHz100 degC / 4.75 V / -6 dBm / 450 MHz PIN= -10 dBm -50 -45 -40 -35 -30 -25 -20 -15 -10 650 700 750 800 850 900 950 LO to IF Leakage (dBm) RF Freq (MHz) -40 degC / 4.75 V / -6 dBm / 350 MHz-40 degC / 4.75 V / -6 dBm / 450 MHz 25 degC / 4.75 V / -6 dBm / 350 MHz 25 degC / 4.75 V / -6 dBm / 450 MHz 100 degC / 4.75 V / -6 dBm / 350 MHz100 degC / 4.75 V / -6 dBm / 450 MHz

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 11 RevO, Feb 2013 F1100 DATASHEET TYPICAL OPERATING CONDITIONS [General] (-7-) I P3O vs. ∆∆ ∆∆f (TA = 25C, Freq = 850 MHz, IF = 350 MHz) EVkit Input RF Trace Loss (TA = 25C) EVkit IF Port Match (TA = 25C) I P3O vs. PIN (TA = 25C, Freq = 850 MHz, IF = 350 MHz) TC4-6T Transformer Loss E Vkit RF & LO Port Match (TA = 25C) IP3 (lower sideband) -ChA IP3 (lower sideband) -ChB IP3 (upper sideband) - ChA IP3 (upper sideband) - ChB Output IP3 (dBm) Tone Spacing (KHz) -0.4 -0.3 -0.2 -0.1 0.0 650 700 750 800 850 900 950 RF Freq (MHz) RFA & RFB input trace loss (dB) RF Freq (MHz)RF Freq (MHz)RF Freq (MHz)RF Freq (MHz) -30 -25 -20 -15 -10 0 50 100 150 200 250 300 350 400 450 500 550 IF Return Loss (dB) IF Frequency (MHz) IF_A IF_B IP3 (lower sideband) -ChA IP3 (lower sideband) -ChB IP3 (upper sideband) - ChA IP3 (upper sideband) - ChB RF input Power (dBm) Output IP3 (dBm) -2.0 -1.6 -1.2 -0.8 -0.4 0.0 0 50 100 150 200 250 300 350 400 450 500 Balun Loss (dB) IF Frequency (MHz) 25 degC -40 degC 85 degC -30 -25 -20 -15 -10 600 700 800 900 1000 1100 1200 1300 1400 Return Loss (dB) Frequency (MHz) LO RF_A RF_B

RF to IF Dual Downconverting Mixer IDT Zero-DistortionTM Mixer PACKAGE D RAWING (6X6 QFN) RF to IF Dual Downconverting Mixer 698 - 915

915 MHz F1100NBGI

RevO, Feb 2013 F1100 DATASHEET

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 13 RevO, Feb 2013 F1100 DATASHEET PINOUTS 36 35 34 33 32 31 30 29 28 9RF_B 6NC [internal NC] 4NC [internal NC] 3GND [DB GND] 2GND [RFA_rtn] 1RF_A GND [DB GND] LO1_ADJ VCC 15NC [internal NC] IF_B- IF_B+ NC [internal NC] IF_BiasB VCC

19 LO_in

GND [internal NC]

21 VCC

GND [STBY] LO_SW [internal NC] GND [DB GND] LO_in_alt27 B I A S C T R L GND [DB GND] LO2_ADJ VCC NC [internal NC] IF_A- I F_A+ NC [internal NC] IF_BiasA VCC GND [DB GND] GND [DB GND] Black Text denotes recommended external connection Red Text denotes internal Function or Connection - DB GND = Downbonded to Paddle - Internal NC = Pin not connected GND [RFB_rtn] GND [LO_rtn] Please Note! - Only connect to one LO feed - Choose Either Pin 19 or Pin 27 -Do not connect the unused LO pin to ensure good LO return loss

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 14 RevO, Feb 2013 F1100 DATASHEET PIN D ESCRIPTIONS Pin Name Function 1 RF_A Main Channel RF Input. Internally matched to 50Ω. DO NOT apply DC to these pins 2, 8, 20 RF_Artn, RF_Brtn, LO_rtn Transformer Ground Returns. Ground these pins. 3, 5, 7, 18, 24, 28 GND Ground these pins. 4, 6, 12, 15, OK to connect to GND 10, 16, 21, 30, 36 VCC Power Supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as possible to pin. 9 RF_B Diversity Channel RF Input. Internally matched to 50Ω

11 IF_BiasB

Connect the specified resistor from this pin to ground to set the bias for the Diversity IF amplifier. This is NOT a current set resistor 13, 14 IFB+, IFBb Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit).

17 LO1_ADJ Connect the specified resistor for either Standard or LC mode

from this pin to ground to set the LO common buffer Icc 19, 27 LO_in LO_in_alt Local Oscillator Input. Connect the LO to this port through the recommended coupling capacitor. Note that you can only drive one LO port at a time. Remove the series capacitor f rom the unused port. 25 NC Make Certain this pin is not connected. It is normally reserved for selecting low current mode which the F1100 does not offer 22 STBY STBY Mode. Pull this pin high for Standby mode (~28 mA). Pull low or Ground for normal Operation

29 LO2_ADJ Connect the specified resistor for either Standard or LC mode

from this pin to ground to set the LO drive buffers Icc 32, 33 IFAb, IFA+ Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit).

35 IF_BiasA Connect the specified resistor from this pin to ground to set the

bias for the Main IF amplifier. This is NOT a current set resistor — EP Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via grounds are also required to achieve the noted RF performance.

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 15 RevO, Feb 2013 F1100 DATASHEET EVKIT SCHEMATIC 36 35 34 33 32 31 30 29 28 RF_B RF_B rtn NC 4NC GND RF_A rtn RF_A 18GND 17LO1_ADJ 16VCC 15NC 14IF_B- 13IF_B+ 12NC 11IF_BiasB 10VCC LO_in_alt27 LO_rtn B I A S C T R L C8J4 C10 C12 Vcc C13 R12 R11 C14 L3 L4 C15 Vcc R14 R13 C16 Vcc Vcc GND LO2_ADJ VCC NC IF_A- IF_A+ NC IF_BiasA VCC Vcc C6 R15 R16 L1 L2 C2 J2 Vcc R17 R18 Vcc 4:1 Balun 4:1 Balun C11 JP JP Vcc R9 R8 Vcc GND GND R10

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 16 RevO, Feb 2013 F1100 DATASHEET EVKIT PICTURE/LAYOUT/OPERATION Place Jumper for Normal Operation Remove Jumper to turn OFF Do Not Place Jumper Place Jumpers in OOuutteerr Positions Place Jumpers in OOuutteerr Positions Remove C11 and Place C7 to use Alternate LO port (LO2)

RF to IF Dual Downconverting Mixer 698 - 915 MHz F1100NBGI IDT Zero-DistortionTM Mixer 17 RevO, Feb 2013 F1100 DATASHEET EVKIT BOM For Normal Operation, Make sure the LCMODE jumper is open and that the dual jumpers are set to the outer position. TOPMARKINGS F1100 PCB Rev 5 BOM Rev 02 Item # Value Size Desc Mfr. Part # Mfr. Part ReferenceQty 1 10nF 0402 CAP CER 10000PF 16V 10% X7R 0402 GRM155R71C103KA01D MURATA C1,5,6,9,12,13,16 7 2 1000pF 0402 CAP CER 1000PF 50V C0G 0402 GRM1555C1H102JA01D MURATA C2,3,14,15 4 3 150pF 0402 CAP CER 150PF 50V C0G 0402 GRM1555C1H151JA01D MURATA C8,10,11 3 4 150pF C7 1 5 10uF 0603 CAP CER 10UF 6.3V X5R 0603 GRM188R60J106ME47D MURATA C4 1

6 Header 2 Pin TH 2 CONN HEADER VERT SGL 2POS GOLD 961102b6404bAR 3M JP1,2,3 3

7 Header 3 Pin TH 3 CONN HEADER VERT SGL 3POS GOLD 961103b6404bAR 3M JP4,5,6,7 4

8 SMA_END_LAUNCH .062 SMA_END_LAUNCH (Small) 142b0711b821 Emerson Johnson J1,2,7 3 9 SMA_END_LAUNCH .062 SMA_END_LAUNCH (Big) 142b0701b851 Emerson Johnson J3,4,5,6 4 10 270nH 0805 0805CS (2012) Ceramic Chip Inductor 0805CSb271XJLB COILCRAFT L1,2,3,4 4 11 20 0402 RES 20 OHM 1/10W 1% 0402 SMD ERJb2RKF27R0X Panasonic R11,15 2 12 40.2 0402 RES 40.2 OHM 1/10W 1% 0402 SMD ERJb2RKF40R2X Panasonic R13 1 13 1.21K 0402 RES 1.21K OHM 1/10W 1% 0402 SMD ERJb2RKF1211X Panasonic R17 1 14 47K 0402 RES 47.0K OHM 1/16W 1% 0402 SMD RC0402FRb0747KL Yageo R8,9 2 15 0 0402 RES 0.0 OHM 1/10W 0402 SMD ERJb2GE0R00X Panasonic R1,2,3,4,5,6,7,10 8 16 4:1 Balun SMb22 4:1 Center Tap Balun TC4b6TG2+ Mini Circuits T1,2 2

17 F1100 QFNb36DUAL RF MIXER F1100NBGI IDT U1 1

18 PCB EV Kit F11XX EV Kit Rev 05 1

NOTE: C7 and C11 cannot be installed together. C7 for Pin27 LO feed. C11 for Pin19 LO feed I DTF1100 NBGI YC1208A Q60A030M

Lot Code Date Code: [xxYYWWx] (Work Week 08 of 2012) Part Number NOTE: Production Devices are DateCode 1208 or later.

TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan www.renesas.com Contact Information For further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit: www.renesas.com/contact/ Trademarks Renesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners. IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for developers skilled in the art designing with Renesas products. You are solely responsible for (1) selecting the appropriate products for your application, (2) designing, validating, and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. Renesas grants you permission to use these resources only for development of an application that uses Renesas products. Other reproduction or use of these resources is strictly prohibited. No license is granted to any other Renesas intellectual property or to any third party intellectual property. Renesas disclaims responsibility for, and you will fully indemnify Renesas and its representatives against, any claims, damages, costs, losses, or liabilities arising out of your use of these resources. Renesas' products are provided only subject to Renesas' Terms and Conditions of Sale or other applicable terms agreed to in writing. No use of any Renesas resources expands or otherwise alters any applicable warranties or warranty disclaimers for these products. (Rev.1.0 Mar 2020) © 2020 Renesas Electronics Corporation. All rights reserved.

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Renesas Technology Corp F1100 overview.

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RF to IF Dual Downconverting Mixer

Description

RF to IF Dual Downconverting Mixer

Source title F1100 Datasheet(PDF) - Renesas Technology Corp

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