ET190 ISC
Document overview
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor ET190
DESCRIPTION
- LowCollectorSaturationVoltage- :VCE(sat)=2.0V(Min)@IC=8A
- Highreliability
- HighD.Ccurrentgain
APPLICATIONS
- Poweramplifierapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 600 V VCEO Collector-EmitterVoltage 600 V VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 8 A IB BaseCurrent-Continuous 1 A PC CollectorPowerDissipation 80 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor ET190 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=1mA;IB=0 600 V V(BR)CBO Collector-EmitterBreakdownVoltage IC=1mA;IB=0 600 V VCBO(SUS) Collector-EmitterBreakdownVoltage IC=100mA;IB=0 450 V VEBO Emitter-BaseBreakdownVoltage IEBO=200mA 6 V VCE(sat) Collector-EmitterSaturationVoltage IC=5A;IB=0.1A 1.2 V VBE(on) Base-EmitterOnVoltage IC=5A;IB=0.1A 1.8 V ICBO CollectorCutoffCurrent VCB=600V;IE=0 1 mA IEBO EmitterCutoffCurrent VEB=6V;IC=0 200 mA hFE-1 DCCurrentGain IC=5A;VCE=5V 200