ESJA54-08 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC2690
DESCRIPTION
- High voltageandhigh fT
- Complementaryto 2SA1220PNPtransistor
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- The2SC2690 isgeneral purposetransistors designed Forusein audioandradio frequency power amplifiers.
- Suitableforuse indriverstageof 50 to100W audio Amplifiersandoutput stageofTVvertical deflection circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 120 V VCER Collector-EmitterVoltageRBE=150Ω 120 V VCEO Collector-EmitterVoltage 120 V VEBO Emitter-BaseVoltage 5 V IC CollectorCurrent-Continuous 1.2 A PC CollectorPower Dissipation @Tc=25℃ 20 W TJ JunctionTemperature -55~150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC2690 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-EmitterSaturationVoltage IC=1A;IB=200mA 0.7 V VBE(sat) Base-EmitterSaturationVoltage IC=1A;IB=200mA 1.3 V ICBO CollectorCutoffCurrent VCB=120V;IE=0 1 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 1 μA hFE-1 DCCurrentGain IC=5mA;VCE=5V 35 hFE-2 DCCurrentGain IC=0.3A;VCE=5V 60 320 hFE-2 Classifications R Q P 60-120 100-200 160-320